DLA SMD-5962-89729 REV E-2008 MICROCIRCUITS DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON《四2输入多路复用单片硅高级CMOS数字微电路》.pdf

《DLA SMD-5962-89729 REV E-2008 MICROCIRCUITS DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON《四2输入多路复用单片硅高级CMOS数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-89729 REV E-2008 MICROCIRCUITS DIGITAL ADVANCED CMOS QUAD 2-INPUT MULTIPLEXER MONOLITHIC SILICON《四2输入多路复用单片硅高级CMOS数字微电路》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class V criteria. Editorial changes throughout - jak. 98-07-29 Monica L. Poelking B Add RHA limits - jak 99-08-23 Monica L. Poelking C Add vendor CAGE F8859. Add table III delta limits. Add case outline X. Editorial changes throughout

2、jak. 00-11-01 Thomas M. Hess D Update boilerplate to MIL-PRF-38535 requirements. Make change to VOHdelta limit in table III. - jak 01-01-10 Thomas M. Hess E Update the boilerplate to the current requirements of MIL-PRF-38535. - jak 08-04-09 Thomas M. Hess REV SHEET REV E E E SHEET 15 16 17 REV STATU

3、S REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL

4、 DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-08-25 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT MULTIPLEXER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-89729 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E

5、053-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89729 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents

6、two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assur

7、ance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89729 01 E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For

8、device class V: 5962 - 89729 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-P

9、RF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type

10、(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC158 Quad 2-input multiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has b

11、een added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class leve

12、l B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89729 DEFENSE SUPPLY CENTER COLUMBUS COLU

13、MBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pa

14、ck X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0

15、V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) 20 mA DC output current (per pin) . 50 mA DC VCCor GND current (per pin) . 100 mA Maximum power dissipation (PD) 500 mW Storage temperature range (

16、TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc t

17、o VCCOutput voltage range (VOUT). +0.0 V dc to VCCMinimum high level input voltage (VIH): VCC= 3.0 V 2.10 V dc VCC= 4.5 V 3.15 V dc VCC= 5.5 V 3.85 V dc Maximum low level input voltage (VIL): VCC= 3.0 V 0.90 V dc VCC= 4.5 V 1.35 V dc VCC= 5.5 V 1.65 V dc Case operating temperature range (TC). -55C t

18、o +125C Input rise or fall times (VCC= 3.6 V to 5.5 V) 0 to 8 ns/V 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 100 krads (Si) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may

19、 degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceede

20、d except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss w

21、ith the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20A, VOL 30% VCC 20 A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89729 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVIS

22、ION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are th

23、ose cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case

24、Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document

25、Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract

26、. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JESD 20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. (Copies of this document is available online at www.eia.org/ or from the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). AMER

27、ICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor D

28、rive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unle

29、ss a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89729 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3. REQU

30、IREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or fu

31、nction as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall

32、be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

33、3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical performance character

34、istics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrica

35、l test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire

36、SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for de

37、vice class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendi

38、x A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manuf

39、acturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the re

40、quirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be pro

41、vided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affect this drawing. 3.9 Verific

42、ation and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit

43、 group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-8

44、9729 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 Table IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Device type and VCCGroup A subgroups Limits

45、4/ Unitunless otherwise specified Device class Min Max Positive input clamp voltage 3022 VIC+For input under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level output voltage VOH VIN= VIHminimum or VI

46、Lmaximum All All 3.0 V 1, 2, 3 2.9 V 3006 5/ IOH= -50 A All All 4.5 V 1, 2, 3 4.4 All All 5.5 V 1, 2, 3 5.4 VIN= VIHminimum or VILmaximum IOH= -4 mA All All 3.0 V 1, 2, 3 2.4 IN= VIHminimum or VILmaximum All All 4.5 V 1, 2, 3 3.7 OH= -24 mA All All 5.5 V 1, 2, 3 4.7 VIN= VIHminimum or VILmaximum IOH

47、= -50 mA All All 5.5 V 1, 2, 3 3.85 Low level output voltage VOL VIN= VIHminimum or VILmaximum All All 3.0 V 1, 2, 3 0.1 V 3007 5/ IOL= 50 A All All 4.5 V 1, 2, 3 0.1 All All 5.5 V 1, 2, 3 0.1 VIN= VIHminimum or VILmaximum IOL= 12 mA All All 3.0 V 1, 2, 3 0.5 IN= VIHminimum or VILmaximum All All 4.5

48、 V 1, 2, 3 0.5 OL= 24 mA All All 5.5 V 1, 2, 3 0.5 VIN= VIHminimum or VILmaximum IOL= 50 mA All All 5.5 V 1, 2, 3 1.65 High level input voltage VIHAll All 3.0 V 1, 2, 3 2.1 V 6/ All All 4.5 V 1, 2, 3 3.15 All All 5.5 V 1, 2, 3 3.85 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89729 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 Table IA. Electrical performance characterist