DLA SMD-5962-84190 REV E-2005 MICROCIRCUIT DIGITAL N-CHANNEL MOS 8-BIT MICROCOMPUTER WITH 32 K-BIT UVEPROM MONOLITHIC SILICON《装有32千比特紫外线消除式可程序化只读存储器的8比特金属氧化物半导体微处理器 N沟道数字微型电路》.pdf

《DLA SMD-5962-84190 REV E-2005 MICROCIRCUIT DIGITAL N-CHANNEL MOS 8-BIT MICROCOMPUTER WITH 32 K-BIT UVEPROM MONOLITHIC SILICON《装有32千比特紫外线消除式可程序化只读存储器的8比特金属氧化物半导体微处理器 N沟道数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-84190 REV E-2005 MICROCIRCUIT DIGITAL N-CHANNEL MOS 8-BIT MICROCOMPUTER WITH 32 K-BIT UVEPROM MONOLITHIC SILICON《装有32千比特紫外线消除式可程序化只读存储器的8比特金属氧化物半导体微处理器 N沟道数字微型电路》.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change case outline X to case outline Q. Add case outline Y. Delete group C programmability test and add margin test. Convert to military drawing format. 86-09-23 M. A. Frye B Add vendor CAGE 34335. Add device type 02. Change drawing CAGE number.

2、 Editorial changes throughout. 88-05-26 M. A. Frye C Changes made in accordance with NOR 5962-R038-93 92-12-09 Monica L. Poelking D Incorporated Revision C. Updated drawing to Q level. Updated boilerplate to MIL-PRF-38535 requirements. LTG 01-12-03 Thomas M. Hess E Correct marking requirements in 3.

3、5. Update boilerplate in accordance with MIL-PRF-38535 requirements. Editorial changes throughout. - PHN. 05-04-11 Thomas M. Hess THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED REV SHET REV E E E E E SHEET 15 16 17 18 19 REV STATUS REV E D E E D D D D D D D D D E OF SHEETS SHEET 1 2 3 4

4、5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg A. Pitz STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTME

5、NT OF DEFENSE DRAWING APPROVAL DATE 85-06-24 MICROCIRCUIT, DIGITAL, N-CHANNEL, MOS 8-BIT MICROCOMPUTER WITH 32 K-BIT UVEPROM, MONOLITHIC SILICON SIZE A CAGE CODE 67268 84190 AMSC N/A REVISION LEVEL E SHEET 1 OF 19 DSCC FORM 2233 Provided by IHSNot for ResaleNo reproduction or networking permitted wi

6、thout license from IHS-,-,-APR 97 5962-E245-05 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the followi

7、ng example: 84190 01 Q X Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Frequency Circuit function 01 8751H-8 8.0 MHz max 8-bit microcomputer with 32 K

8、bit UVEPROM 02 8751H 12.0 MHz max 8-bit microcomputer with 32 K bit UVEPROM 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 Dual-in-line package Y CQCC1-N44 44 Squar

9、e chip carrier package 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Voltage on any pin (except VPP) 2/ -0.5 V dc to +7.0 V dc Voltage (VPP) . 21.5 V dc Power dissipation (PD) . 2.0 W Storage temperature range -65C to +150C Junction te

10、mperature (TJ) +165C Lead temperature (soldering, 5 seconds) +260C Thermal resistance, junction-to-case (JC): Cases Q and Y . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V dc to 5.5 V dc Program voltage (VPP) . 21.0 V dc 0.5 V dc Case operating temperature range (

11、TC). -55C to +125C _ 1/ Lid shall be transparent to permit ultraviolet light erasure. 2/ All voltages referenced to VSS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84190 DEFENSE SUPPLY CENTER COLUMBUS COLUMBU

12、S, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues o

13、f these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard El

14、ectronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the S

15、tandardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, super

16、sedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing

17、that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approv

18、al in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ o

19、r “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. This drawing has been modified to allow the manufacturer to use the alternate die/fabrication requirements of paragraph A.3.2.2 of MIL-PRF-38535 or other alternative approved by the

20、qualifying activity. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. Th

21、e terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 Programmed EPROM device. The requirements for supplying programmed EPROM devices are not part of this drawing. 3.3 Electrical performance characteristics. Unless

22、otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84

23、190 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. M

24、arking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance

25、to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. For product built in accordance with A.3.2.2 of MIL-PRF-38535, or as modified in the manufacturers QM pla

26、n, the “QD” certification mark shall be used in place of the “Q“ or “QML“ certification mark. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of co

27、mpliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appen

28、dix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to

29、review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Processing EPROMS. All testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to deli

30、very. 3.10.1 Erasure of EPROMS. When specified, devices shall be erased in accordance with the procedures and characteristics specified in 4.4. 3.10.2 Programmability of EPROMS. When specified, devices shall be programmed to the specified pattern using the procedures and characteristics specified in

31、 4.5 and table III. 3.10.3 Verification of erasure of programmability of EPROMS. When specified, devices shall be verified as either programmed to the specified pattern or erased. As a minimum, verification shall consist of performing a functional test (subgroup 7) to verify that al bits are in the

32、proper state. Any bit that does not verify to be the proper state shall constitute a device failure, and shall be removed from the lot. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84190 DEFENSE SUPPLY CENTER C

33、OLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C VCC= 5.0 V 10% unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input low voltage VIL1, 2, 3 All 0.7 V In

34、put high voltage (except XTAL2, RST) VIH1, 2, 3 All 2.2 V Input high voltage to XTAL2, RST VIH1XTAL1 = VSS1, 2, 3 All 2.5 V Output low voltage ports 1, 2, 3 VOLIOL= 1.2 mA 1, 2, 3 All 0.45 V IOL= 2.8 mA 0.60 Output low voltage port 0 ALE, PSEN VOL1IOL= 2.4 mA 1, 2, 3 All 0.45 V Output high voltage p

35、orts 1, 2, 3 VOHIOH= -60 A 1, 2, 3l All 2.4 V Output high voltage port 0 (in external bus mode), ALE, PSEN VOH1IOH= -300 A 1, 2, 3 All 2.4 V Logical 0 input current P1, P2, P3 IILVIN= 0.45 V 1, 2, 3 All -500 A Logical 0 input current to EA/VPPIIL1VIN= 0.45 V 1, 2, 3 All -15 mA Logical 0 input curren

36、t to XTAL2 IIL2XTAL1 = VSS, VIN= 0.45 V 1, 2, 3 All -4.5 mA Input leakage current to port 0 ILI0.45 V VIN VCC1, 2, 3 All 125 A Logical input current to EA/VPPIIHVIN= 2.4 V 1, 2, 3 All 500 A Input current to RST/VPDto activate reset IIH1VIN (VCC1.5 V) 1, 2, 3 All 500 A Power supply current ICCAll out

37、puts disconnected, EA = VCC1, 2, 3 All 275 mA Capacitance of I/O buffers CI/Ofc = 1 MHz, TC= +25C See 4.3.1c 4 All 30 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84190 DEFENSE

38、 SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TC +125C VCC= 5.0 V 10% unless otherwise specified Group A subgroups Device typeLimits Limits 2/ Unit Min Max Min Ma

39、x 01 125 286 tCLCLtCLCLOscillator period tCLCL9, 10, 11 02 83 286 tCLCLtCLCLns High time 1/ 3/ tCHCX9, 10, 11 All 20 20 ns Low time 1/ 3/ tCLCX9, 10, 11 All 20 20 ns Rise time 1/ 3/ tCLCH9, 10, 11 All 20 20 ns Fall time 1/ 3/ tCHCL9, 10, 11 All 20 20 ns 01 195 2tCLCL-55 ALE pulse width tLHLL9, 10, 1

40、1 02 112 2tCLCL-55 ns 01 70 tCLCL-55 Address valid to ALE tAVLL9, 10, 11 02 28 tCLCL-55 ns 01 75 tCLCL-50 Address hold after ALE tLLAX9, 10, 11 02 33 tCLCL-50 ns 01 335 4tCLCL-165 ALE to valid instr in tLLIV9, 10, 11 02 168 4tCLCL-165 ns 01 85 tCLCL-40 ALE to PSEN tLLPL 9, 10, 11 02 43 tCLCL-40 ns 0

41、1 300 3tCLCL-75 PSEN pulse width tPLPH9, 10, 11 02 175 3tCLCL-75 ns 01 210 3tCLCL-165 PSEN to valid instr in tPLIV9, 10, 11 02 85 3tCLCL-165 ns Input instr hold after PSEN tPXIX9, 10, 11 All 0 0 ns 01 90 tCLCL-35 Input instr float after PSEN 1/ tPXIZ9, 10, 11 02 48 tCLCL-35 ns 01 100 tCLCL-25 PSEN t

42、o address valid tPXAVCL(Port 0, ALE, PSEN) = 100 pF CL(all others) = 80 pF fMAX= 8 MHz device 01 fMAX= 12 MHz device 02 See figures 3 and 4 4/ 9, 10, 11 02 58 tCLCL-25 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

43、STANDARD MICROCIRCUIT DRAWING SIZE A 84190 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued Test Symbol Conditions -55C TC +125C VCC= 5.0 V 10% unless otherwise specified Group A subgro

44、ups Device type Limits Limits 2/ Unit Min Max Min Max 01 460 5tCLCL-165 Address to valid instr in tAVIV9, 10, 11 02 252 5tCLCL-165 ns Address float to PSEN 1/ tAZPL9, 10, 11 All 0 0 ns 01 650 6tCLCL-100 RD pulse width tRLRH9, 10, 11 02 400 6tCLCL-100 ns 01 650 6tCLCL-100 WR pulse width tWLWH9, 10, 1

45、1 02 400 6tCLCL-100 ns 01 75 tCLCL-50 Address hold after ALE tLLAX9, 10, 11 02 33 tCLCL-50 ns 01 440 5tCLCL-185 RD to valid data in tRLDV9, 10, 11 02 232 5tCLCL-185 ns Data hold after RD tRHDX9, 10, 11 All 0 0 ns 01 165 2tCLCL-85 Data float after RD 1/ tRHDZ9, 10, 11 02 82 2tCLCL-85 ns 01 830 8tCLCL

46、-170 ALE to valid data in tLLDV9, 10, 11 02 496 8tCLCL-170 ns 01 940 9tCLCL-185 Address to valid data in tAVDV9, 10, 11 02 565 9tCLCL-185 ns 01 310 440 3tCLCL-65 3tCLCL+65 ALE to WR or RD tLLWL9, 10, 11 02 185 315 3tCLCL-65 3tCLCL+65 ns 01 355 4tCLCL-145 Address to WR or RD tAVWL9, 10, 11 02 188 4tC

47、LCL-145 ns 01 40 tCLCL-85 Data valid to WR transition tQVWXCL(Port 0, ALE, PSEN) = 100 pF CL(all others) = 80 pF fMAX= 8 MHz device 01 fMAX= 12 MHz device 02 See figures 3 and 4 4/ 9, 10, 11 02 0 tCLCL-85 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking pe

48、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84190 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TC +125C VCC= 5.0 V 10% unless otherwise specified Group A subgroups Device type Limits Limits 2/ Unit Min Max Min Max 01 800 7tCLCL-75 Data setup to WR high tQVWH9, 10, 11 02 508 7tCLCL-75 ns 01 60 tCLCL-65 Data held after WR tWHQX9, 10, 11 02 18 tCLCL-65 ns RD low to address float 1/ tRLAZ9, 10, 11 All