DLA SMD-5962-84075 REV F-2010 MICROCIRCUIT DIGITAL HIGH SPEED CMOS 4-BIT SYNCHRONOUS BINARY COUNTER WITH ASYNCHRONOUS CLEAR MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED B Convert to military drawing format. Add vendor CAGE no. 27014 to case 2. Corrected error in vendor similar part number. Change code ident. no. to 67268. 87-11-24 M. A. Frye C Inactivate cases E and 2 for new design. Technical changes in 1.4. Edit

2、orial changes throughout. 89-05-22 M. A. Frye D Add vendor CAGE F8859. Add device class V criteria. Correct data limits in paragraph 1.3. Add case outline X. Add table III. Update boilerplate. Editorial changes throughout. -les 00-07-11 Raymond Monnin E Correct table II. Update boilerplate to MIL-PR

3、F- 38535 requirements. jak 02-01-16 Thomas M. Hess F Update boilerplate paragraphs to current requirements of MIL-PRF-38535 MAA 10-04-19 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHEET REV F F F F F SHEET 15 16 17 18 19 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10

4、 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil/ STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH SPEED

5、 CMOS, 4-BIT SYNCHRONOUS BINARY COUNTER WITH AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 84-10-16 ASYNCHRONOUS CLEAR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 14933 84075 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E264-10 Provided by IHSNot for ResaleNo reprodu

6、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of hi

7、gh reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN.

8、 The PIN is as shown in the following examples. For device classes M and Q: 84075 01 E X_ Drawing number Device type Case outline Lead finish (see 1.2.2) (see 1.2.4) (see 1.2.5) For device class V: 5962 - 84075 01 V X X Federal RHA Device Device Case Lead stock class designator type class outline fi

9、nish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices

10、meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC161 4-Bit synchrono

11、us binary counter with asynchronous clear1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designa

12、tors will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification a

13、nd qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s)

14、. The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP4-F16 16 Flat pack 1.2.5 Lead finish.

15、 The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT)

16、 . -0.5 V dc to VCC+0.5 V dc Input clamp current (IIK) 20 mA Output clamp current (IOK) . 20 mA Continuous output current . 25 mA Continuous current through VCCor GND . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 se

17、conds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V

18、0 to 1000 ns VCC= 4.5 V 0 to 500 ns VCC= 6.0 V 0 to 400 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GN

19、D. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in scre

20、ening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 223

21、4 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or

22、contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HA

23、NDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA

24、19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3

25、. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit,

26、 or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions

27、shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figu

28、re 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified in figure 4. Provided by IHSNot for ResaleN

29、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unle

30、ss otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specifi

31、ed in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitati

32、ons, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-385

33、35, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device class

34、es Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source

35、of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device

36、 class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to th

37、is drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device cla

38、ss M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class

39、M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218

40、-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max High level output voltage VOHVIN= VIHminimum or VILmaximum IOH= -20 A VCC= 2.0 V 1, 2, 3

41、 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHminimum or VILmaximum IOH= -4.0 mA VCC= 4.5 V 1 3.98 2, 3 3.7 VIN= VIHminimum or VILmaximum IOH= -5.2 mA VCC= 6.0 V 1 5.48 2, 3 5.2 Low level output voltage VOLVIN= VIHminimum or VILmaximum IOL= 20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1

42、VIN= VIHminimum or VILmaximum IOL= 4.0 mA VCC= 4.5 V 1 0.26 2, 3 0.4 VIN= VIHminimum or VILmaximum IOL= 5.2 mA VCC= 6.0 V 1 0.26 2, 3 0.4 High level input voltage VIH 2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low level input voltage VIL 2/ VCC= 2.0 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC

43、= 6.0 V 1.2 Input capacitance CINVIN= 0.0 V, TC= +25C See 4.4.1c 4 10.0 pF Quiescent supply current ICCVIN= VCC or GND VCC= 6.0 V 1 8.0 A 2, 3 160.0Input leakage current IINVCC= 6.0 V, VIN= VCCor GND 1 0.1 A 2, 3 1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or netw

44、orking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C G

45、roup A subgroups Limits Unit unless otherwise specified Min Max Functional tests See 4.4.1b 7,8 Power dissipation capacitance CPDSee 4.4.1c 4 60.0 pF Removal time, CLR to CLK tREM TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 125 ns VCC= 4.5 V 25 VCC= 6.0 V 21 TC= -55C, +125C CL= 50 pF See figure 4 V

46、CC= 2.0 V 10, 11 190 ns VCC= 4.5 V 38 VCC= 6.0 V 32 Setup time, data to CLK tS TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 170 ns VCC= 4.5 V 34 VCC= 6.0 V 29 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 255 ns VCC= 4.5 V 51 VCC= 6.0 V 43 Hold time, data from CLK th TC= +25C CL= 50 pF Se

47、e figure 4 VCC= 2.0 V 9 0 ns VCC= 4.5 V 0 VCC= 6.0 V 0 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 0 ns VCC= 4.5 V 0 VCC= 6.0 V 0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

48、G SIZE A 84075 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max Pulse width, CLK, CLR , or LOAD tw TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 80 ns VCC= 4.5 V 16 VCC= 6.0 V 14