BS CECC 90112-1987 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - MOS read write dynamic memories silicon monoli.pdf

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1、BRITISH STANDARD BS CECC 90112:1987 Incorporating Amendment No.1 Specification for Harmonized system of quality assessment for electronic components Blankdetail specification MOS read/write dynamic memories silicon monolithic circuitsBSCECC90112:1987 BSI 04-2000 ISBN 0 580 35840 2 Amendments issued

2、since publication Amd. No. Date of issue Comments 8165 March 1994 Indicated by a sideline in the marginBSCECC90112:1987 BSI 04-2000 i Contents Page National foreword ii Foreword ii Scope 1 Related documents 1 Structure of Detail Specifications 1 Units, symbols and terminology 1 Application of Qualit

3、y Assessment Procedures 1 1 Type description 2 2 Operating Characteristics 3 3 Identification of the device types 10 4 Test and measurement procedures 10 5 Structural similarity of memories 11 6 Qualification approval procedures 11 7 Capability approval procedures 11 8 Screening procedures 11 9 Insp

4、ection requirements 12BSCECC90112:1987 ii BSI 04-2000 National foreword The BritishStandard has been prepared under the direction of the Electronic Components Standards Committee. It is identical with CENELEC Electronic Components Committee (CECC)90112:1986 “Harmonized system of quality assessment f

5、or electronic components. Blank detail specification: MOS read/write dynamic memories silicon monolithic circuits”. This standard is a harmonized specification within the CECC System. Terminology and conventions. The text of the CECC specification has been approved as suitable for publication as a B

6、ritishStandard without deviation. Some terminology and certain conventions are not identical with those used in BritishStandards; attention is drawn especially to the following. The comma has been used as a decimal marker. In BritishStandards it is current practice is use a full point on the baselin

7、e as the decimal marker. Cross-references. The BritishStandard which implements CECC00100 is BS9000: “General requirements for a system for electronic components of assessed quality” Part2:1983 “Specification for national implementation of CECC basic rules and rules of procedure”. The Technical Comm

8、ittee has reviewed the provisions of IEC747, to which reference is made in the text, and has decided that they are acceptable for use in conjunction with this standard. Scope. This standard lists the ratings, characteristics and inspection requirements which shall be included as mandatory requiremen

9、ts in accordance with BS CECC90100 in any detail specification for these devices. Detail specification layout. The front page layout of detail specifications released to BS CECC family or blank detail specifications will be in accordance with BS9000 Circular letter No.15. A British Standard does not

10、 purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. International Standards a Corresponding BritishStandards IEC 68-2-30

11、 BS 2011: Basic environmental testing procedures Part2.1 Db:1981 Test Db and guidance. Damp heat cyclic(12+12hour cycle) (Identical) IEC 617-12 BS 3939 Guide for graphical symbols for electrical power, telecommunications and electronics diagrams: Part12:1985 Binary logic elements (Identical) CECC 90

12、000:1985 BS CECC90000:1985 Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits (Identical) CECC 90100:1986 BS CECC90100:1986 Harmonized system of quality assessment for electronic components. Sectional specification: digital monoli

13、thic integrated circuits (Identical) a Undated in text. Summary of pages This document comprises a front cover, an inside front cover, pagesi andii, theCECC title page, pageii, pages1 to13 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated.

14、 This will be indicated in the amendment table on the inside front cover.BSCECC90112:1987 ii BSI 04-2000 Foreword The CENELEC Electronic Components Committee (CECC) is composed of those member countries of the European Committee for Electrotechnical Standardization (CENELEC) who wish to take part in

15、 a harmonized System for electronic components of assessed quality. The object of the System is to facilitate international trade by the harmonization of the specifications and quality assessment procedures for electronic components, and by the grant of an internationally recognized Mark, or Certifi

16、cate, of Conformity. The components produced under the System are thereby accepted by all member countries without further testing. This specification has been formally approved by the CECC, and has been prepared for those countries taking part in the System who wish to issue national harmonized spe

17、cifications for MOS READ/WRITE DYNAMIC MEMORIES SILICON MONOLITHIC CIRCUITS. It should be read in conjunction with the current regulations for the CECC System. At the date of printing of this specification the member countries of the CECC are Austria, Belgium, Denmark, Finland, France, Germany, Irel

18、and, Italy, theNetherlands, Norway, Portugal, Spain, Sweden, Switzerland, and theUnitedKingdom. Preface This blank detail specification (BDS) was prepared by CECC WG9 “Integrated circuits”. It is based, wherever possible, on the Publications of the International Electrotechnical Commission and in pa

19、rticular on IEC747: Semiconductor devices Discrete devices and integrated circuits. The text of this BDS was circulated to the CECC for voting in the documents indicated below and was ratified by the President of the CECC for printing as a CECC specification. It is recognized that the layout propose

20、d cannot be applied to all detail specifications based on this document. For instance, it may be preferable to indicate the limiting values in the form of a table when several similar devices appear in the same detail specification. In accordance with the decision of the CECC Management Committee th

21、is specification is published initially in English and French. The German text will follow as soon as it has been prepared. Documents Date of Voting Report on the Voting CECC (Secretariat)1338 March1983 CECC (Secretariat)1493 CECC (Secretariat)1605 August1984 CECC (Secretariat)1724BSCECC90112:1987 B

22、SI 04-2000 1 General The following information is given for guidance Scope This BDS relates to MOS Read/Write Dynamic Memories in accordance with IEC747: Semiconductor devices Discrete devices and integrated circuits. Related documents See2.1 of CECC90100 and2.2 of CECC90000 Structure of Detail Spec

23、ifications Clause numbering of DS shall be in accordance with that of this document. Units, symbols and terminology See2.3 of CECC90100 and2.3 of CECC90000 Application of Quality Assessment Procedures See3 of CECC90100 and CECC90000.BSCECC90112:1987 2 BSI 04-2000 Layout for front page of detail spec

24、ification BSCECC90112:1987 BSI 04-2000 3 The front page of the DS shall be laid out as shown on the previous page. The numbers between square brackets correspond to the following indications which shall be given: Identification of the DS and of the component: Identification of the component and supp

25、lementary information: Description of the materials for the package (for example, glass, ceramic, metal, plastic) and information relating to the mounting (welding, soldering), lead material and finish. Inside the sketch of the package, the terminal connections to the inputs, outputs or other import

26、ant points of the circuit shall be identified. This can be shown by a functional block diagram. Description of the numbering of the terminals with the identification of pin number1. Marking on the device in accordance with the GS (see2.5 of CECC90000). 2 Operating characteristics The following chara

27、cteristics shall apply over the full operating temperature range and the supply voltage range unless otherwise specified. 2.1 General description The following characteristics shall be given if they are not adequately defined in clause1: Nominal voltage supply level. The type of refresh modes. Opera

28、ting modes (for example address sampling). Electrical compatibility (if appropriate): it shall be stated whether the integrated circuit memory is electrically compatible with other particular integrated circuits or families of integrated circuits, or whether special interfaces are required. 1 The na

29、me of the National Standards Organization under whose authority the DS is published and, if applicable, the organization from whom the DS is available. 2 The CECC Symbol and the CECC number allotted to the DS by the CECC General Secretariat. 3 The number and issue number of the CECC generic or secti

30、onal specification as relevant; also national reference if different. 4 If different from the CECC number, the national number of the DS, date of issue and any further information required by the national system, together with any amendment numbers. 5 Type number, a short description of the type by:

31、 function performance, for example variants based on speed, temperature, power etc. 6 Information on typical construction material and type of construction (silicon, monolithic, bipolar, MOS) For 5 and 6 the text to be given in the DS should be suitable for an entry in CECC00200 (QPL) and CECC00300

32、(Library List). 7 An outline drawing with main dimensions which are of importance for interchangeability, and/or reference to the appropriate national or international document for outlines. Alternatively, this drawing may be given in an annex to the DS. 8 Quality assessment level(s) 9 Reference dat

33、a giving information on the most important properties of the component, which allow comparison between the various component types intended for the same, or for similar, applications. The DS shall give a brief description including the following: Technology (N MOS, H MOS . . .) Structure (words bits

34、) The type of output circuit (for example: open collector, three state . . .) Essential functionsBSCECC90112:1987 4 BSI 04-2000 Block diagram: the block diagram shall be sufficiently detailed to enable the individual functional units within the memory to be identified with their main input and outpu

35、t paths and the identification of their external connections (chip enable, address decode . . .). The function(s) performed by each terminal. The IEC617-12 symbolic representation shall be given if it exists. 2.2 Detailed Functional Specification This paragraph defines the following characteristics

36、memory size: the total number of bits of information capable of being stored in the memory circuit memory organisation: the number of bits per word capable of being stored in the memory circuit addressing mode (row address select and column address if address multiplexing) chip select 1) output enab

37、le 1) standby mode truth table (this table will show the output states versus the different combinations between the address inputs and the select inputs) 2.3 Limiting conditions of use (ratings) Limiting conditions (ratings) are not for inspection purposes. Values of limiting conditions of use shal

38、l be given as follows: Any cautionary statement unique to an individual integrated circuit shall be included, for example the handling of MOS circuits. Any interdependence of limiting conditions shall be specified. If externally connected elements have an influence on the values of the ratings, the

39、ratings shall be prescribed for the integrated circuit with the elements connected for example heatsinks. If transient overloads are permitted, their magnitude and durations shall be specified. All voltages are referenced to a reference terminal (V ss , GND, etc.). 2.4 Recommended conditions of use

40、and associated characteristics (In accordance with5.3.8 of CECC90100) Not for inspection purpose. The characteristics shall apply over the full operating temperature range, unless otherwise specified. Where the stated performance of the circuit varies over the operating temperature range, the values

41、 of the input and output voltages and their associated currents shall be stated at25 C and at the extremes of the operating temperature range. Values of current and voltage shall be given for each functionally different type of input and/or output. 1) The chip select and the output enable shall be d

42、istinguished. Characteristics Symbol min. max. Unit Supply voltage V DD , V BB , V CC , V EE , V Input voltages V I V Output voltages V O V Off-state voltage (Note1) V OZ V Output currents I O mA Input currents I I mA Max. power-dissipation P Dmax. n.a. W Operating temperature T amband/or T case C S

43、torage temperature T stg C NOTE 1Where appropriate.BSCECC90112:1987 BSI 04-2000 5 Special characteristics and timing requirements shall be specified by the relevant DS. 2.4.1 Recommended conditions of use All voltages are referenced to a reference terminal (V SS , GND, etc.). 2.4.2 Associated charac

44、teristics (if applicable) 2.5 Static characteristics All voltages are referenced to a reference terminal (V SS , GND etc.) Characteristics Conditions Symbols min. max. Unit Supply voltage V CC(Note1) V DD(Note1) V BB(Note1) V EE(Note1) V V V V Low level input voltage V IL V High level input voltage

45、V IH V Operating temperature T amband/or T case C NOTE 1Where appropriate these values should also be quoted under standby conditions. Characteristics Conditions (Notes4,5) Symbols min. a max. a Unit Average operating current during R/W cycle (Note1) V CCmax. I CC I DD I BB I EE Where appropriate mA

46、 mA mA mA Standby current (Note1) Average refresh supply current (Note1) Average page mode supply current (Note1) High level input voltage V CC V IH V Low level input voltage V CC V IL V High level output voltage V CC I OHA V OH V Low level output voltage V CC I OLA V OL V High level input or leakag

47、e current V CC V IHB I IH A Low level input or leakage current V CC V ILA I IL (1) A Low level input or leakage current V CC V ILB I IL (2) A High level output current V CC V OHB I OH A Low level output current V CC V OLA I OL mA High level output current (leakage) (Note2) V CC V OHA I OHX A Low lev

48、el output current (leakage) (Note 2) V CC V OLB I OLX A a algebraic values BSCECC90112:1987 6 BSI 04-2000 The following shall also be stated: where certain terminals may function as inputs or as outputs, then information shall be given for both these conditions 2.6 Dynamic characteristics Characteri

49、stics Conditions (Notes4,5) Symbols min. a max. a Unit High level output leakage current at three-state outputs (ifapplicable) V CC V OHB I OHZ A Low level output leakage current at three-state outputs (if applicable) V CC V OLA I OLZ A Output short circuit current (Note3) V CC V O= 0 I OS mA NOTE 1Where appropriate. NOTE 2I OHXand I OLXapply only to circuits having open-collector (or open source/drain) outputs and in this case replace I OHand I OL . NOTE 3Duration to be