DLA SMD-5962-98617 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL HEX INVERTER BUFFERS DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 双极TTL 开集高压输出六路反向缓冲器.pdf

《DLA SMD-5962-98617 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL HEX INVERTER BUFFERS DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 双极TTL 开集高压输出六路反向缓冲器.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-98617 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR TTL HEX INVERTER BUFFERS DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 双极TTL 开集高压输出六路反向缓冲器.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 07-03-08 Robert M. Heber REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Lee Surowiec DEFENSE SUPPLY CENTER

2、 COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Lee Surowiec COLUMBUS, OHIO 43218-36990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, HEX INVERTER BUFFERS/DRIVERS WITH AND AGENCIES OF THE DEPARTMENT OF D

3、EFENSE DRAWING APPROVAL DATE 98-06-15 OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-98617 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E070-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

4、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space app

5、lication (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962

6、- 98617 01 Q C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RH

7、A levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circ

8、uit function as follows: Device type Generic number Circuit function 01 54LS06 Hex inverter buffers/drivers with open-collector high-voltage outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device r

9、equirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated i

10、n MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix

11、A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings

12、. 1/ Supply voltage (VCC) 7.0 V dc Input voltage 2/ . 5.5 V dc Output voltage (VO) 2/ 3/ . 30 V Case operating temperature range (TC) . -55C to +125C Maximum power dissipation (PD) . 420 mW Thermal resistance, junction to case (JC) See MIL-STD 1835 Junction temperature (TJ) . 175C Storage temperatur

13、e range . -65C to +150C 1.4 Recommended operating conditions. Supply voltage range (VCC) 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL). 0.8 V dc Maximum high level output voltage (VOH) . 30 V Maximum low level output current (IOL) 30 mA Ca

14、se operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these docume

15、nts are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Compo

16、nent Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Docum

17、ent Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable law

18、s and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended

19、operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2/ Voltage values are with respect to network ground terminal. 3/ This is the maximum voltage that should be applied to any output when it is in the off state. Prov

20、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual

21、item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item

22、 requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for

23、 device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as spe

24、cified on figure 2. 3.2.4 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics a

25、nd postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table

26、 I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the devi

27、ce. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark

28、 for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

29、listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance

30、 submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Cer

31、tificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class

32、 M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to re

33、view the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 2 (

34、see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrica

35、l performance characteristics. Test Symbol Conditions -55C TC +125C VCCGroup A subgroups Limits Unit unless otherwise specified Min Max Input clamp voltage VIKII= -12 mA 4.5 V 1, 2, 3 -1.5 V High-level output current IOHVIL= 0.8 V, VOH= 30 V 4.5 V 1, 2, 3 0.25 mA Low-level output voltage VOLVIH= 2.0

36、 V IOL= 16 mA 4.5 V 1, 2, 3 0.4 V IOL= 30 mA 0.7 Input current IIVI= 7.0 V 5.5 V 1, 2, 3 1 mA High-level input current IIHVI= 2.4 V 5.5 V 1, 2, 3 20 A Low-level input current IILVI= 0.4 V 5.5 V 1, 2, 3 -0.2 mA High-level supply current ICCH5.5 V 1, 2, 3 18 mA Low level supply current ICCL5.5 V 1, 2,

37、 3 60 mA Functional tests See 4.4.1b 7, 8A, 8B tPLHRL= 110 , CL= 15 pF TA= 25C5.0 V 9 15 ns Propagation delay time input A to output YtPHL20 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPL

38、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Case outline C 2 Terminal number Terminal symbol 1 1A NC 2 1Y 1A 3 2A 1Y 4 2Y 2A 5 3A NC 6 3Y 2Y 7 GND NC 8 4Y 3A 9 4A 3Y 10 5Y GND 11 5A NC 12 6Y 4Y 13 6A 4A 14 VCC5Y 15 NC 16 5A 17 NC 18 6Y 19 6A 20 VCCFIGUR

39、E 1. Terminal connections. FIGURE 2. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 9

40、7 Notes: 1. CLincludes probe and jig capacitance. (See Table I.) FIGURE 3. Switching waveforms and test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

41、OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modificati

42、on in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall b

43、e conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M.

44、a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, ou

45、tputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test dur

46、ation, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB

47、) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and

48、final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology co