DLA SMD-5962-98537 REV C-2006 MICROCIRCUIT MEMORY DIGITAL RADIATION-HARDENED CMOS SOI 128K X 8 STATIC RAM MONOLITHIC SILICON《微型电路 带记忆力 数字型 辐射加固 CMOS SOI 128K X 8静态随机存取存储器 单块硅》.pdf

《DLA SMD-5962-98537 REV C-2006 MICROCIRCUIT MEMORY DIGITAL RADIATION-HARDENED CMOS SOI 128K X 8 STATIC RAM MONOLITHIC SILICON《微型电路 带记忆力 数字型 辐射加固 CMOS SOI 128K X 8静态随机存取存储器 单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-98537 REV C-2006 MICROCIRCUIT MEMORY DIGITAL RADIATION-HARDENED CMOS SOI 128K X 8 STATIC RAM MONOLITHIC SILICON《微型电路 带记忆力 数字型 辐射加固 CMOS SOI 128K X 8静态随机存取存储器 单块硅》.pdf（32页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update, added appendix B for die. ksr 01-05-01 Raymond Monnin B Boilerplate update and part of five year review. tcr 06-01-19 Raymond Monnin C Changes made to paragraph 1.4, added 3.2.7.1, and added test to Table IA. ksr 06-10-02 Raym

2、ond Monnin REV SHET REV C C C C C C C C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWI

3、NG CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 99-03-02 MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 128K X 8 S

4、TATIC RAM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-98537 SHEET 1 OF 31 DSCC FORM 2233 APR 97 5962-E669-06 .Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98537 DEFENSE SUPPLY

5、 CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead f

6、inishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 98537 01 Q X C | | | | | | | | | | | | Federal RHA Device Dev

7、ice Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appr

8、opriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type

9、Generic number 1/ Circuit function Input/output levels Chip enable Access time 01 128K X 8 Rad-Hard CMOS/SOI SRAM CMOS Dual 25 ns 02 128K X 8 Rad-Hard CMOS/SOI SRAM TTL Dual 25 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

10、 follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case

11、 outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 32 Flat pack Y See figure 1 40 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendi

12、x A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

13、NDARD MICROCIRCUIT DRAWING SIZE A 5962-98537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.5 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc 4/ DC out

14、put voltage range(VOUT) -0.5 V dc to VCC+ 0.5 V dc 4/ Storage temperature range -65C to +150C Case operating temperature range -55C to +125C Lead temperature (soldering 5 seconds) . +270C Thermal resistance, junction-to-case (JC): Case X and Y 2.0C/W Output voltage applied to High-Z state -0.5 V dc

15、to VCC+ 0.5 V dc Maximum power dissipation 2.0 W Maximum junction temperature . +175C 1.4 Recommended operating conditions. 4/ Supply voltage range (VCC). 4.5 V dc to 5.5 V dc Supply voltage reference (GND). 0.0 V Supply voltage ramp time (0 V to VCC). 50 ms High level input voltage range (VIH): Dev

16、ice type 01 (CMOS levels) 0.7 x VCCto VCC+ 0.3 V dc Device type 02 (TTL levels) 2.2 V dc to VCC+ 0.3 V dc Low level input voltage range (VIL): Device type 01 (CMOS levels) -0.3 V dc to 0.3 x VCCDevice type 02 (TTL levels) -0.3 V dc to 0.8 V dc Case operating temperature range. -55C to +125C 1.5 Digi

17、tal logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, method 5012)100 percent 1.6 Radiation features. Maximum total dose available (dose rate = 50-300 rad/s) 1.0 MRads(Si) Single event phenomenon (SEP) effective linear energy threshold (L

18、ET) with no upsets 128 MEV-cm2/mg Neutron irradiation 1 x 1014neutrons/cm25/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, t

19、he issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface

20、Standard Electronic Component Case Outlines. _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. 3/ All voltage are referenced to GND. 4/ Maximum applied voltage shall not exceed +6.5 V. 5/ Guaranteed, but not tested Provided by IHSNot for ResaleNo reproduction

21、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK

22、-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publication

23、s. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for t

24、he Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS I

25、NDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available

26、from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this draw

27、ing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as speci

28、fied herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN

29、class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see Appendix B to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein fo

30、r device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The tru

31、th table(s) shall be as specified on figure 3. 3.2.4 Output load circuit. The output load circuit shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as specified

32、on figure 6. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.7 Functional tests. Various funct

33、ional tests used to test this device are contained in the appendix A herein. If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under do

34、cument revision level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For device classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535

35、and shall be made available to the preparing or acquiring activity upon request. 3.2.7.1 Supply voltage ramp rate and functionality. The part utilizes column and row sparing (redundancy). Slow VCCramp rates may fail to activate necessary sparing. The device is tested with a Read/Write March pattern

36、after power-up at 50 ms and 2 seconds to insure proper operation. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall

37、 apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 he

38、rein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still b

39、e marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-

40、PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this draw

41、ing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply

42、for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for d

43、evice classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) invol

44、ving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation.

45、Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspe

46、ction. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M

47、, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device c

48、lass M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98537 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V unle