DLA SMD-5962-96738 REV R-2013 MICROCIRCUIT LINEAR RADIATION HARDENED QUAD VOLTAGE COMPARATOR MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add IIOparameter to Table IIB. Changes in accordance with NOR 5962-R050-96. 96-02-01 M. A Frye B Make changes to 1.2.3 and add footnote 1/. Changes in accordance with NOR 5962-R085-96. 96-03-21 M. A Frye C Under Table IIA, delete footnote 2/ from

2、 Final electrical parameters device class V block. In footnote 2/, delete “interim” and substitute “endpoint” under Table IIA. Delete footnote 1/ from Table IIB entirely. Changes in accordance with NOR 5962-R041-97. 96-11-04 R. Monnin D Under Table IIB, IIO parameter, delete “5 nA” and substitute “1

3、0 nA”. Changes in accordance with NOR 5962-R174-97. 97-01-17 R. Monnin E Changes to the maximum limit on dimensions D and L on case outline X. Redrawn. 97-06-20 R. Monnin F Make changes to dimensions L, R, and R1 as specified under figure 1. - ro 97-12-01 R. Monnin G Add radiation hardness assurance

4、 requirements. - ro 98-11-03 R. Monnin H Add new footnotes to input current under 1.3 and to radiation features title under 1.5. Make changes to VIO, VCM, VDIFF, and tRLHRHA designator “R” tests limits as specified under table I. Delete figures 1 and 4. - ro 03-11-18 R. Monnin J Delete the words “at

5、 +25C” from footnote 4/ as specified under Table I. - ro 04-06-18 R. Monnin K Add device type 02 tested at low dose rate. - ro 06-06-27 R. Monnin L Make correction to the VCMtest limit for subgroups 2 and 3 as specified under Table I. - ro 07-11-29 R. Heber M Change the dose rate from “12 mrads(Si)

6、/ s” to “10 mrads (Si) / s” for device type 02 under paragraph 1.5. Also under paragraph 1.5, third line of the paragraph, after method 1019, add the words, “condition D”. Make changes to footnote 1/ as specified under Table I. Make a clarification to the second sentence of footnote 4/ as specified

7、under Table I. - ro 08-03-11 R. Heber N Add paragraph 3.1.1 and die Appendix A. - ro 08-11-06 R. Heber P Add CAGE 01295. Add figure A-2 under Appendix A. - ro 11-01-25 C. Saffle R Add the “” symbol to the Input offset voltage post rad hard limits as specified in Table I. Delete device class M refere

8、nces. - ro 13-11-07 C. Saffle REV SHEET REV R R R R R R SHEET 15 16 17 18 19 20 REV STATUS REV R R R R R R R R R R R R R R OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD

9、MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD VOLTAGE COMPARATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-01-23 AMSC N/A REV

10、ISION LEVEL R SIZE A CAGE CODE 67268 5962-96738 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E026-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96738 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION

11、LEVEL R SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Ident

12、ifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 L 96738 01 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator C

13、ase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s).

14、The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM139A Quad voltage comparator 02 LM139A Quad voltage comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follow

15、s: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-lin

16、e D GDFP1-F14 or CDFP2-F14 14 Flat pack X GDFP1-G14 14 Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

17、 DRAWING SIZE A 5962-96738 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL R SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input current . 50 mA 2/ Supply voltage range . 36 V dc or 18 V dc Input voltage range -0.3 V dc to 36 V dc Sink current 20 mA Storage temperatur

18、e range (TSTG) -65C to 150C Maximum power dissipation (PD) . 900 mW 3/ Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) 23C/W Thermal resistance, junction-to-ambient (JA) Case outline C 103C/W still air 65C/W 500 LFPM Case out

19、lines D and X 183C/W still air 120C/W 500 LFPM 1.4 Recommended operating conditions. Supply voltage range . 5 V dc to 30 V dc Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100 krads (Si) 4/

20、Device type 02: Maximum total dose available (dose rate = 10 m rads(Si)/s) 100 krads (Si) 5/ The manufacturer supplying RHA parts on this drawing has completed Lot Acceptance testing at Low Dose Rate (10 mrad/s) on these RHA marked parts. The Low Does Rate (LDR) testing that was performed demonstrat

21、es that these parts from the lot tested do not have an Enhanced Low Dose rate Sensitivity as defined by method 1019, condition D. Lot Acceptance Testing at LDR will continue to be performed on each wafer or wafer lot until characterization testing has been performed in accordance with method 1019 of

22、 MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per method 1019 and the previously tested device was ELDRS, the part number will be changed to an 02 device to distinguish the 2 parts. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended

23、 operation at the maximum levels may degrade performance and affect reliability. 2/ This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as in

24、put diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparator to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is d

25、riven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than 0.3 V dc at +25C. 3/ Derate 10 mV/C above TA= 100C. 4/ These parts may be dose rate sensitive in a space environment and may demonstrat

26、e enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 5/ For CAGE 27014, device type 02, these parts have been tested and do not demonstrate low dose rate sensitivity. Radiation

27、 end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96738 DLA LAND AND MARITIM

28、E COLUMBUS, OHIO 43218-3990 REVISION LEVEL R SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the

29、 issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface St

30、andard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Des

31、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat

32、ions unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modificat

33、ion in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as spec

34、ified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Functional diagram. The functional diagram shall be as specifie

35、d on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiati

36、on parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sh

37、all be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96738 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-399

38、0 REVISION LEVEL R SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Supply current ICCRL= , V+ = 30 V 1,2,3 01, 02 2 mA Output leakage current ICEX

39、V+ = 30 V, VOUT= 30 V 1,2,3 01, 02 1 A Saturation voltage VSATISINK= 4 mA 1 01, 02 400 mV 2,3 700 Output sink current ISINKVOUT= 1.5 V 1 01, 02 6 mA Input offset voltage VIOV+ = 5 V, VCM= 0 V 1 01, 02 2 mV 2,3 4 M,D,P,L 1 2.5 R 1 4.0 V+ = 30 V, VCM= 0 V 1 2 2,3 4 M,D,P,L 1 2.5 R 1 4.0 V+ = 30 V, VCM

40、= 28.5 V, VOUT= 1.5 V 1 2 M,D,P,L 1 2.5 R 1 4.0 V+ = 30 V, VCM= 28 V, VOUT= 1.5 V 2,3 4 M,D,P,L 1 2.5 R 1 4.0 Input bias current IIBVOUT= 1.5 V 1 01, 02 -100 -1 nA 2,3 -300 -1 M,D,P,L,R 1 -110 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without

41、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96738 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL R SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C Group A subgroups Device typ

42、e Limits Unit unless otherwise specified Min Max Input offset current IIOVOUT= 1.5 V 1 01, 02 25 nA 2,3 100 Power supply rejection ratio PSRR V+ = 5 V to 30 V 1 01, 02 60 dB Common mode rejection ratio CMRR V+ = 30 V, VCM= 0 V to 28.5 V 1 01, 02 60 dB Voltage gain AVV+ = 15 V, RL 15 k, VOUT= 1 V to

43、11 V 1 01, 02 50 V/mV Common mode 4/ voltage range VCMV+ = 30 V 1 01, 02 0 V+ - 1.5 V 2,3 0 V+ - 2.0 Differential input 5/ voltage VDIFFV+ = 30 V, V- = 0 V, VIN+= 36 V, VIN-= 0 V 1,2,3 01, 02 500 nA V+ = 30 V, V- = 0 V, VIN+= 0 V, VIN-= 36 V 500 Response time tRLHVOD(overdrive) = 5 mV 4 01, 02 5.0 s

44、 tRLHVOD(overdrive) = 50 mV 4 0.8 M,D,P,L 4 0.9 R 4 1.0 tRHLVOD(overdrive) = 5 mV 4 2.5 tRHLVOD(overdrive) = 50 mV 4 0.8 1/ RHA devices supplied to this drawing meet and are tested to all levels M, D, P, L, and R. Pre and post irradiation values are identical unless otherwise specified in table I. W

45、hen performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ V+ = 5 V, VCM= 0 V. 3/ The 01 device may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only f

46、or the conditions specified in MIL-STD-883, method 1019, condition A for device type 01. For CAGE 27014, device type 02, has been tested at low dose rate and does not demonstrate low dose rate sensitivity (see 1.5 herein). 4/ The input common mode voltage or either input signal voltage should not be

47、 allowed to go negative by more that 0.3 V. The upper end of the common mode voltage range is V+ -1.5 V for subgroup 1 or V+ -2.0 V for subgroups 2 and 3, but either or both inputs can go to +30 V dc without damage independent of the magnitude of V+. 5/ Positive excursions of input voltage may excee

48、d the power supply level. As long as the other voltage remains within the common mode range, the comparator will provide a proper output state. The low input voltage state must not be less than -0.3 V dc or 0.3 V dc below the magnitude of the negative power supply, if used. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96738 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL R SHEET 7 DSCC FORM 2234 APR 97 Device types 01 and 0