DLA SMD-5962-95714 REV A-1996 MICROCIRCUIT DIGITAL CMOS RADIATION HARDENED 8-BIT BUS TRANSCEIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体数字的8-BIT母线收发器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95714 REV A-1996 MICROCIRCUIT DIGITAL CMOS RADIATION HARDENED 8-BIT BUS TRANSCEIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体数字的8-BIT母线收发器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95714 REV A-1996 MICROCIRCUIT DIGITAL CMOS RADIATION HARDENED 8-BIT BUS TRANSCEIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体数字的8-BIT母线收发器硅单片电路线型微电路》.pdf（17页珍藏版）》请在麦多课文档分享上搜索。

1、t DEFENSE LOGISTICS AGENCY DEFENSE ELECTRONICS SUPPLY CENTER 1507 WILMINGTON PIKE DAYTON, OH 45444-5765 IN REPLY REFERTO: DESC-ELDC (Mr. Gauder/ (AV 986) 513-296-8526/1tg) FE8 2 6 S9 SUBJECT: Notice of Revision (NOR) 5962-R048-96 for Standard Microcircuit Drawing (SMD) 5962-95714. Military/Industry

2、Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. NOR should be attached to the subject SMD for future reference. After co

3、mpletion, the Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DESC a certificate of compliance. This is evidenced by an existing active current certificate of compliance on file at DESC

4、along with a DESC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DESC is otherwise notified. If you have comments or questions, please contact Larry T. Gauder at (AV3986-8526 / (513) 296-8526. 1 Encl - MONICA L. P

5、OELKING Chief, Custom Microelectronics Branch Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR) This revision described below has been authorized for the docwnt listed. Public reporting burden for this coiiection is estimated t

6、o average 2 hwrs per response jncluding the time for reviewiry instructions, searching existing data-sources, gathering and mainfaining the data needed, and conp eting and reviewing the collection of information. this burden estimate or an other aspect of this collection of information for reducing

7、this burden, ro De rtmemt of Defense, Uashingtiw Headquartet% Services, Directorate for Information Operations-and Pqprts, 1215 Jefferson Davis Highway Suite 1204 Arli ton VA 22202-4302 and to the Office of ana ement and Bud#tE: Paperwork Reduction Proct (O%-OSe), Uashington DC 20503. ACTIVITY NIMBE

8、R LISTED IN ITEM 2 OF THIS FORM. Se- c-nts regarding including suggestions PLEASE DO NOT IETURN YOUR C PL TED FORM TO EITHER OF THkSE ADDRESSED RETURN COMLETED FORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING 1. DATE (YYMHDD ) 96-01 -31 4. ORIGINATOR a. CURRENT Initial

9、MlCROCIRCU!T, DIGITAL, CMOS, RADIATION HARDENED 8-BIT BUS TRANSCEIVER, MONOLITHIC SILICON a. TYPED NAME (First, Middle Initial, Last) b. NEU A b. ADDRESS (Street, City, State, Zip Code) 7. CAGE CODE Defense Electronics Supply Center 1507 Uilmington Pike Dayton, OH 45444-5765 a. (X one) I 9. TITLE OF

10、 DOCUMENT 10. REVISION LETTER X (1) Existing docunent supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised document. Form Approved OMB

11、NO. 0704-0188 b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT 2. PROCURING ACTIVITY NO. c. TYPED NAME (First, Middle Initial, Last) 3. DODMC e. SIGNATURE Monica L. Poelking b. REVISION COMPLETED (Signature) Larry T. Gauder 6. NOR NO. 5962-R048-96 8. DOCUMENT NO. 5962-95714 f. DATE SIGNED (Y

12、YMMDD ) 96-01 -31 c. DATE SIGNED (Y YMMDD ) 96-01 -31 11. ECP NO. Sheet 1: Revisions ltr colum; add IIA“. Revisions description colum; add “Changes in accordance with NOR 5962-R048-9618 Revisions date colum; add 1196-01-3111. Revision level block; add 81A18. Rev status of sheets; For sheets 1 and 3

13、add imun ratinsa. Maxim package power dissipation add ,IT, +125“C1,. Sheet 3: 1.3 fibsolute rnax 1.4 Rec- . Latch up add llall. Revision level block; add IIA,. DESC-ELDC d. TITLE Chief, Custom Microelectronics 15a. ACTIVITY ACCOMPLISHING REVISION DESC-ELDC DD Form 1695, APR 92 Provided by IHSNot for

14、 ResaleNo reproduction or networking permitted without license from IHS-,-,-REVISIONS LTR DESCRIPTION DATE (YRMO-DA) APPROVED * * SHEET SIZE A 5ktt SHEET REV STATUS OF SHEETS CAGE CODE 5962-95714 67268 PMIC NIA STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AG

15、ENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA - PREPARED BY Thomas M. Hess CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 95-1 1-30 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, CMOS, RADIATION SILICON HARDENED 8-BIT BUS TRA

16、NSCEIVER, MONOLITHIC SHEET 1 OF 14 )ESC FORM 193 JUL 94 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E261-95 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 -. This drawing forms a part of a one

17、part - one part nimber docunentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes CI and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identif

18、ying Nunber (PIN). Device class i4 microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, I8Provisions for the use of MIL-STD-883 in conjunction with conpliant non-JAN devices“. Uhen available, a choice of Radiation Hardness Assurance (RHA) levels are reflecte

19、d in the PIN. I 1.2 fi. The PIN shall be as shown in the following example: 95714 I Federal RHA 111-I Device Device Case Lead II stock class designator type c lass outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) (see 1.2.3) w Drawing number 1.2.1 RHA desimator. D

20、evice class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. MIL-1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. non-RHA device. Device classes P and V RHA marked devices sha

21、ll meet the A dash (-1 indicates a 1.2.2 Device tvoe(s.1. The device type(s) shall identify the circuit function as follows: Devi ce te Generic number Circuit function o1 82C08RH Radiation hardened 8-BIT bus transceiver I 1.2.3 Device class desimator. The device class designator shall be a single le

22、tter identifying the product assurance level as follows: Device class Device reauirements docunentation I SIZE STANDARD A MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL M 5962-95714 SHEET 2 Vendor self-certification to the requirements for non-JAN class B mi

23、crocircuits in accordance with 1.2.1 of MIL-STD-883 1 nri IICIInL I I P or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s1. The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter DeSCriDtiVe desimator Terminals Packaae style - - - - - - . . .

24、 R X CDIPZ-T20 CDFP4-F20 20 20 Dual-in-line package Ceramic flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes P and V. designation is for use in specifications when lead finishes A, B, and C are considered accept

25、able and interchangeable Finish letter I1Xm1 shall not be marked on the microcircuit or its packaging. The llX1l DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY C

26、ENTER DAYTON, OHIO 45444 SMD-5962-95714 = 9999976 0082737 T56 REVISION LEVEL 1.4 Recomended oDeratins conditions. Operating supply voltage range (VD,) - - - - - - - - - - - - - - Operating temperature range (TA) - - - - - - - - - - - - - - - - input low voltage range (VIL) - - - - - - - - - - - - -

27、- - - - Input high voltage range (VI“) - - - - - - - - - - - - - - - - - Radiation features Totaldose- - - - - - - - - - - - - - - - - - - - - - - - I Dose rate upset 3- - - - - - - - - - - - - - - - - - - - - - Latch-up - - - - - - - - - - - - - - - - - - - - - - - - - Single event phenomenon effec

28、tive linear energy threshold, no upsets 3- - - - - - - - - - - - 2. APPLICABLE DOCUMENTS +7.0 V dc GND -0.3 V dc to “DO +0.3 V dc -65C to +150C +175C 0.70 U 0.59 U 17WU 25C/W 71C/U 85C/U +300-C 4.75 V dc to +5.25 V dc O V dc to +1.0 V dc -55C to +125C Voo -1.0 V dc to VDD 100K Rgds(S1) 1 x 10 Rads(S

29、I)/s 1 x IOi2 Rads(CI)/s 2.1 Government specification, standards, bulletin. and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the s

30、olicitation, form a part of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-1.38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MI LI TARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MI

31、L-STD-1835 - Microcircuit Case Outlines. BULLETIN MI LI TARY MIL-BUL-103 - List of Standardized Military Drawings (SMDIS). HANDBOOK MIL I TARY MIL-HDBK-780 - Standardized Military Drawings. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. maximum levels may deg

32、rade performance and affect reliability. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on e 3 GuaranteedJ11 = 5.25 V, VIN = GND I 1,2,3 718 See 4.4.lb VDD = 4.75 V to 5.25 V I VIH = VDD -1.0, vIL 1.0 v Functional tests All I

33、 PORT DATA/HODE SPECIFICATIONS Propagation delay to tpDLH logicat l8l1I from port A,B to port B.A I . VDD =-4.75 v See figure 3 ns ns Propagation de l ay to logicat l80l1 from port A,B to port t VDD = 4.75 v See figure 3 B.A I ns voo = 4.75 v See figure 3 VOD =-4.75 v See figure 3 ns I SIZE I I 5962

34、-95714 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DATTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Test Limits Min Max 70 130 Vopagat i on delay from high impedance to

35、tofica1 11111 ropagation delay from high impedance to lodcal l10l1 from OE to Dort n/out capacitance Unit ns ns TABLE I. Electrical wrformance characteristics - Continued. , All Conditions -55C s TA +125*C unless otherwise specified Symbol tPZH Group A subgroups 9,10,11 10 I t PZL PF 9, IO, 11 See 4

36、.4.1 = Open, f = 1 MHz measurements referenced I to GND I rRANSRIT/RECEIVE UWE SPECIFICATIONS (AC parameters) Propagation delay y from logical I11l1 to highimpedance from T/R to Dort Propagation delay u from logical 11011 to hi ghimpedance from T/R to Dort Propagation delay 2/ from logical I1lt1 to

37、hiTD-883 method 1019 and as specified herein. 4.4.4.1.1 Accelerated aqinq test. Accelerated aging tests shall be performed on all devices requiring a RHA level reater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I ierein and shall be the pre-

38、irradiation end-point electrical parameter limit at 25.C 25% st initial qualification and after any design or process changes which may affect the RHA response of the device. Testing shall be performed 4.4.4.2 pose rate induced LatchuD testinq. Dose rate induced latchup testing shall be performed in

39、 accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4). Tests shall be performed on devices, SEC, or cation and after any design or process changes which may effect the RHA approved test structures at technology qualif rapabi 1 i ty of the process. 4.4.4.3 -9. test method

40、 1020 of MIL-STD-883 and as specif approved test structures at technology qualif capability of the process. Dose rate induced latchup testing shall be performed in accordance with ed herein (See 1.4). cation and after any design or process changes which may effect the RHA Tests shall be performed on

41、 devices, SEC, or 4.4.4.4 Sinqle event Dhenomena (SEPL. SEP testing shall be required on class V devices (See 1.4). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualific

42、ation and after any design or process changes which may affect the upset or latchup characteristics. The recomnded test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. O s angle s 60.). No shadowin

43、g of the ion beam due to fixturing or package related effects is allowed. b. The fluence shall be c. 100 errors or 2 IO6 ions/cm2. The flux shall be between IO2 and IO5 ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which diffe

44、r by at least an order of magnitude. The particle range shall be 2 20 microns in silicon. The test temperature shall be +25T and the maximum rated operating temperature t1O.C. Bias conditions shall be defined by the manufacturer for latchup measurements. Test four devices with zero failures. d. e. f

45、. 9. 5. PACKAGING 5.1 Packaqins reauirements. The requirements for packaging shall be in accordance with MIL-STD-883 (see 3.1 herein) for device class M and MIL-1-38535 for device classes Q and V. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government

46、 microcircuit appl ica t ions (origi na1 equi pent), design appl i cat ions, and logist i cs purposes. 6.1.1 ReDlaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. STAN DARD MICROCIRCUIT DRAWING DEFENSE EL

47、ECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 5962-95714 I SHEET13 1 REVISION LEVEL DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-957L4 = 999999b 0082750 bL7 6.1.2 Subst itutabilitv. Device class P devices will replace d

48、evice class M devices. 6.2 Confiauration control of SMDIS. All proposed changes to existing SMDIS will be coordinated with the users of record for the individual docunents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. 6.3 Reco

49、rd of users. Military and industrial users shall inform Defense Electronics Supply Center when a system application requires configuration control and which SMDIS are applicable to that system. of users and this list will be used for coordination and distribution of changes to the drawings. covering microelectronic devices (FSC 5962) should contact DESC-EC, telephone (513) 296-6047. DESC will maintain a record Users of drawings 6.4