DLA SMD-5962-95688 REV D-2007 MICROCIRCUIT LINEAR RADIATION HARDENED WIDEBAND HIGH INPUT IMPEDANCE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射多种频率的高输入阻抗运算放大器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95688 REV D-2007 MICROCIRCUIT LINEAR RADIATION HARDENED WIDEBAND HIGH INPUT IMPEDANCE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射多种频率的高输入阻抗运算放大器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95688 REV D-2007 MICROCIRCUIT LINEAR RADIATION HARDENED WIDEBAND HIGH INPUT IMPEDANCE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射多种频率的高输入阻抗运算放大器硅单片电路线型微电路》.pdf（15页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate and make change to output resistance test as specified in table I. - ro 98-06-16 R. MONNIN B Changes to 1.2.4, 1.3, and 1.4. Update boilerplate. - rrp 99-06-08 R. MONNIN C Drawing updated to reflect current requirements. - gt 0

2、3-03-14 R. MONNIN D Add low dose rate footnote to 1.5 and Table I. Delete Neutron and Latch-up parameters and corresponding footnotes under 1.5. . Delete Accelerated aging test and Neutron testing paragraphs under 4.4.4. Delete 6.7. - ro 07-04-23 R. HEBER REV SHET REV SHET REV STATUS REV D D D D D D

3、 D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED B

4、Y MICHAEL FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-07 MICROCIRCUIT, LINEAR, RADIATION HARDENED, WIDEBAND, HIGH INPUT IMPEDANCE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95688 SHEET 1 OF 14 DSCC FORM 2233 APR 97

5、5962-E320-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing docu

6、ments two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness

7、 Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 95688 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawi

8、ng number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA

9、designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-2620RH Radiation hardened, dielectric isolation (D.I.), wideband, high impedance, uncompensated operational amplifie

10、r 02 HS-2622RH Radiation hardened, dielectric isolation (D.I.), wideband, high impedance, uncompensated operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentati

11、on M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as f

12、ollows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo

13、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between +VSand -VS . 40 V Differential i

14、nput voltage (VIND) . 12 V Voltage at either input terminal +VSto -VSPeak output current . Full short circuit protection Maximum package dissipation (PD) at TA= +125C: Case G 0.31 W 2/ Case P . 0.44 W 2/ Junction temperature (TJ) +175C Storage temperature range -65C to +150C Lead temperature (solder

15、ing, 10 seconds) +300C Thermal resistance, junction-to-case (JC): Case G 70C/W Case P . 28C/W Thermal resistance, junction-to-ambient (JA): Case G 160C/W Case P . 115C/W 1.4 Recommended operating conditions. Supply voltage range (VS) . 15 V Common-mode input voltage (VCMIN) . 1/2 (+VS- -VS) Load res

16、istance (RL) 2 k Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s) 10 Krads (Si) 3/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum

17、 levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rates: Case outline G 6.2 mW/C Case outline P . 8.7 mW/C 3/ These parts may be dose rate sensitive

18、 in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

19、nse from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handboo

20、ks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF D

21、EFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents ar

22、e available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the refer

23、ences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in a

24、ccordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance wi

25、th MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and h

26、erein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 E

27、lectrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical

28、 test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packa

29、ges where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance wi

30、th MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re

31、quired in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Elec

32、trical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput offset voltage VIOVCM= 0 V 1 01 -4 +4 mV 02 -5 +5 2,3 01 -6 +602 -7 +7 M,D 1 01 -6 +602 -7 +7 Input bias current +IIBVCM= 0 V, +RS= 100

33、k, 1 01 -15 +15 nA -RS= 100 02 -25 +25 2,3 01 -35 +35 02 -60 +60 M,D 1 01 -35 +35 02 -60 +60 -IIBVCM= 0 V, +RS= 100 , 1 01 -15 +15 -RS= 100 k 02 -25 +25 2,3 01 -35 +35 02 -60 +60 M,D 1 01 -35 +35 02 -60 +60 Input offset current IIOVCM= 0 V, +RS= 100 k, 1 01 -15 +15 nA -RS= 100 k 02 -25 +25 2,3 01 -3

34、5 +35 02 -60 +60 M,D 1 01 -35 +35 02 -60 +60 Common mode rejection +CMRR VCM= +10 V, 1,2,3 01 80 dB ratio +VS= +5 V, -VS= -25 V, 02 74 VOUT= -10 V M,D 1 01 80 02 74 -CMRR VCM= -10 V, 1,2,3 01 80 +VS= +25 V, -VS= -5 V, 02 74 VOUT= +10 V M,D 1 01 80 02 74 See footnotes at end of table. Provided by IHS

35、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test

36、 Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max +VCMR+VS= +4 V, -VS= -26 V 1,2,3 01,02 11 V Common mode voltage range -VCMR+VS= +26 V, -VS= -4 V -11 Output voltage swing +VOUTRL= 2 k 1,2,3 01,02 +10 V M,D 1 +10 -VOUTRL= 2 k 1,2,3

37、 01,02 -10 M,D 1 -10 Output current +IOUTVOUT= -10 V 1 01 +15 mA 02 +10 2,3 01,02 +7.5 M,D 1 01,02 +7.5 -IOUTVOUT= +10 V 1 01 -15 02 -10 2,3 01,02 -7.5 M,D 1 01,02 -7.5 Quiescent power supply +ICCVOUT= 0 V, IOUT= 0 mA 1 01 3.7 mA current 02 4.0 2,3 01 4.0 02 4.3 M,D 1 01 4.0 02 4.3 -ICCVOUT= 0 V, IO

38、UT= 0 mA 1 01 -3.7 02 -4 2,3 01 -4 02 -4.3 M,D 1 01 -4 02 -4.3 Power supply rejection +PSRR +VS= 10 V and -VS= -15 V, 1,2,3 01 80 dB ratio +VS= 20 V and -VS= -15 V, 02 74 VSUP= 5 V M,D 1 01 80 02 74 -PSRR +VS= 15 V and -VS= -10 V, 1,2,3 01 80 +VS= 15 V and -VS= -20 V, 02 74 VSUP= 5 V M,D 1 01 80 02

39、74 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electri

40、cal performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output short circuit +ISCVOUT= 1 V, RL= 10 , 4/ 1 01,02 50 mA current CL= 50 pF 2 45 3 60 -ISCVOUT= -1 V, RL= 10 , 4/ 1 -50 CL= 50 p

41、F 2 -45 3 -60 Quiescent power PC VOUT= 0 V, 4/ 5/ 1,2,3 01,02 240 mW consumption IOUT= 0 mA, CL= 50 pF Large signal voltage +AVOLVOUT= 0 V and +10 V, 4 01 100 kV/V gain RL= 2 k 02 80 5,6 01 70 02 60 M,D 4 01 70 02 60 -AVOLVOUT= 0 V and -10 V, 4 01 100 RL= 2 k 02 80 5,6 01 70 02 60 M,D 4 01 70 02 60

42、Slew rate +SR VOUT= -5 V to +5 V, 4 01 25 V/s measured at 25 % and 75 % 02 20 points, CL= 50 pF, 5,6 01 20 RL= 2 k, AVCL= +5 V/V 02 15 -SR VOUT= +5 V to -5 V, 4 01 25 measured at 75 % and 25 % 02 20 points, CL= 50 pF, 5,6 01 20 RL= 2 k, AVCL= +5 V/V 02 15 Overshoot +OS VOUT= 0 V to 200 mV, 4,5,6 01

43、70 % CL= 50 pF, RL= 2 k, 02 80 AVCL= +5 V/V -OS VOUT= 0 V to -200 mV, 4,5,6 01 70 CL= 50 pF, RL= 2 k, 02 80 AVCL= +5 V/V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95688 DE

44、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Differential i

45、nput RINVCM= 0 V, RL= 2 k, 4/ 4 01 65 M resistance CL= 50 pF, TA= +25C 02 40 Output resistance ROUTOpen loop, RL= 2 k, 4/ 4 01,02 30 CL= 50 pF, TA= +25C Full power bandwidth FPBW VPK= 10 V, RL= 2 k, 4/ 6/ 4 01 400 kHz CL= 50 pF, TA= +25C 02 320 Minimum closed loop CLSG RL= 2 k, CL= 50 pF 4/ 4,5,6 01

46、,02 5 V/V stable gain Rise and fall time TRRVOUT= 0 V to 200 mV, 9 01,02 45 ns measured at 10 % to 90 %, RL= 2 k, CL= 50 pF, 10,11 01 60 AV= +5 V/V 02 70 TRFVOUT= 0 V to -200 mV, 9 01,02 45 measured at 10 % to 90 %, RL= 2 k, CL= 50 pF, 10,11 01 60 AV= +5 V/V 02 70 1/ Unless otherwise specified, devi

47、ce tested at +VS= +15 V, -VS= -15 V, source resistance (RS) = 100 , load resistance (RL) = 500 k, VOUT= 0 V. See figure 3. 2/ Devices supplied to this drawing have been characterized through all levels M and D of irradiation however this device is only tested at the D level. Pre and Post irradiation

48、 values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 4/ If not tested, shall be guaranteed to t