DLA SMD-5962-95685 REV E-2007 MICROCIRCUIT LINEAR RADIAITION HARDENED UNCOMPENSATED HIGH SLEW RATE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射未得到补偿的高回转率运算放大器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95685 REV E-2007 MICROCIRCUIT LINEAR RADIAITION HARDENED UNCOMPENSATED HIGH SLEW RATE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射未得到补偿的高回转率运算放大器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95685 REV E-2007 MICROCIRCUIT LINEAR RADIAITION HARDENED UNCOMPENSATED HIGH SLEW RATE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射未得到补偿的高回转率运算放大器硅单片电路线型微电路》.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R107-98. 98-05-11 R. MONNIN B Changes to 1.2.4, 1.3, and 1.4. Update boilerplate. - rrp 99-06-07 R. MONNIN C Add 3.1.1 and appendix A. - ro 99-09-14 R. MONNIN D Update boilerplate and update die plot in appendi

2、x A. - rrp 01-07-27 R. MONNIN E Add low dose rate footnote under 1.5 and Table I. Add sentence for clarification to footnote 2/ as specified under Table I. Under 1.5, delete Neutron test, Latchup test , and corresponding footnotes. Under 4.4.4, delete Accelerated aging test, Neutron testing, and Dos

3、e rate induced latchup testing paragraphs. Delete 6.7, Additional information paragraph. - ro 07-03-15 R. HEBER REV SHET REV E E E E E SHEET 15 16 17 18 19 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DEFENSE SUPPLY

4、CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-09 MICROCIRCUIT, LINEAR, RADIA

5、ITION HARDENED, UNCOMPENSATED, HIGH SLEW RATE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-95685 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E291-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

6、DARD MICROCIRCUIT DRAWING SIZE A 5962-95685 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicat

7、ion (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 9568

8、5 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA leve

9、ls and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit fu

10、nction as follows: Device type Generic number Circuit function 01 HS-2520RH Radiation hardened, D.I., uncompensated high slew rate, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Dev

11、ice requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designa

12、ted in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Pro

13、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95685 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage betwe

14、en V+ and V- . 40 V Differential input voltage 15 V Voltage at either input terminal . V+ to V- Peak output current . 50 mA Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Maximum package power dissipation (PD) at TA= +125C: Case G 0.31 W 2/ Case P 0.44 W 2/ Lead temperat

15、ure (soldering, 10 seconds) +275C Thermal resistance, junction-to-case (JC): Case G 70C/W Case P 30C/W Thermal resistance, junction-to-ambient (JA): Case G 160C/W Case P 115C/W 1.4 Recommended operating conditions. Positive supply voltage (V+) +15 V Negative supply voltage (V-) . -15 V Ambient opera

16、ting temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 10 Krads (Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of th

17、is drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL

18、-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ I

19、f device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline G . 6.3 mW/C Case outline P . 8.7 mW/C 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low do

20、se rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

21、95685 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:

22、/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex

23、t of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-3853

24、5 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix

25、A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535

26、and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit.

27、 The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall

28、 apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2

29、herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still

30、 be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MI

31、L-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this dr

32、awing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of suppl

33、y for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for

34、 device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) inv

35、olving devices acquired to this drawing is required for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95685 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REV

36、ISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C Device type Group A subgroups Limits Unit unless otherwise specified Min Max Input offset voltage VIOVCM= 0 V 01 1 -8 8 mV 2, 3 -10 10 M, D 2/ 3/ 1 -10 10 Input bias c

37、urrent +IBVCM= 0 V, +RS= 100 k, 01 1 -200 200 nA -RS= 100 2, 3 -400 400 M, D 2/ 3/ 1 -700 700 -IBVCM= 0 V, +RS= 100 , 1 -200 200 -RS= 100 k 2, 3 -400 400 M, D 2/ 3/ 1 -700 700 Input offset current IIOVCM= 0 V, +RS= 100 k, 01 1 -25 25 nA -RS= 100 k 2, 3 -50 50 M, D 2/ 3/ 1 -50 50 Common mode range +C

38、MR V+ = 5 V, V- = -25 V 01 1 +10 V 2, 3 +10 M, D 2/ 3/ 1 +10 -CMR V+ = 25 V, V- = -5 V 1 -10 2, 3 -10 M, D 2/ 3/ 1 -10 Large signal voltage gain +AVOLVOUT= 0 V and +10 V, RL= 2 k 01 4 10 kV/V 5, 6 7.5 M, D 2/ 3/ 4 6.5 -AVOLVOUT= 0 V and -10 V, RL= 2 k 4 10 5, 6 7.5 M, D 2/ 3/ 4 6.5 See footnotes at

39、end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95685 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance char

40、acteristics Continued. Test Symbol Conditions 1/ -55C TA +125C Device type Group A subgroups Limits Unit unless otherwise specified Min Max Common mode rejection ratio +CMRR VCM= +10 V, +V = +5 V, -V = -25 V, VOUT= -10 V 01 1 80 dB 2, 3 80 M, D 2/ 3/ 1 75 -CMRR VCM= -10 V, +V = +25 V, -V = -5 V, VOU

41、T= +10 V 1 80 2, 3 80 M, D 2/ 3/ 1 75 Output voltage swing +VOUTRL= 2 k 01 4 10 V 5, 6 10 M, D 2/ 3/ 4 10 -VOUTRL= 2 k 4 -10 5, 6 -10 M, D 2/ 3/ 4 -10 Output current +IOUTVOUT= -10 V 01 4 10 mA 5, 6 7.5 M, D 2/ 3/ 4 7.5 -IOUTVOUT= +10 V 4 -10 5, 6 -7.5 M, D 2/ 3/ 4 -7.5 +ICCIOUT= 0 mA 01 1 6 mA Quie

42、scent power supply current 2, 3 6.5 M, D 2/ 3/ 1 6.5 -ICCIOUT= 0 mA 1 -6 2, 3 -6.5 M, D 2/ 3/ 1 -6.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95685 DEFENSE SUPPLY CENTER

43、COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C Device type Group A subgroups Limits Unit unless otherwise specified Min Max Power supply rejection ratio +PSRRVSUP= 10

44、 V, +V = +20 V, -V = -15 V, 01 1, 2, 3 80 dB +V = +10 V, -V = -15 V M, D 2/ 3/ 1 76 -PSRRVSUP= 10 V, +V = +15 V, -V = -20 V, 1, 2, 3 80 +V = +15 V, -V = -10 V M, D 2/ 3/ 1 76 Offset voltage 4/ adjustment +VIOADJ 01 1, 2, 3 VIO- 1 mV M, D 2/ 3/ 1 VIO- 1 -VIOADJ 1, 2, 3 VIO+ 1 M, D 2/ 3/ 1 VIO+ 1 Diff

45、erential input 5/ 6/ resistance RINVCM= 0 V, CCOMP= 0 pF 01 4 50 M Gain bandwidth 5/ 6/ product GBWP VOUT= 200 mV, fO= 10 kHz, CCOMP= 0 pF 01 4 10 MHz VOUT= 200 mV, fO= 1 MHz, CCOMP= 0 pF 10 Full power 5/ 6/ 7/ bandwidth FPBW VPEAK= 10 V, CCOMP= 0 pF 01 4 1.6 MHz Minimum closed 5/ 6/ loop stable gai

46、n CLSG RL= 2 k, CL= 50 pF, CCOMP= 0 pF 01 4, 5, 6 +3 V/V Quiescent 5/ 6/ 8/ power consumption PCVOUT= 0 V, IOUT= 0 mA, CCOMP= 0 pF 01 1, 2, 3 195 mW See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

47、DRAWING SIZE A 5962-95685 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C Device type Group A subgroups Limits Unit unless otherwise specified Mi

48、n Max Slew rate +SR VOUT= -5 V to +5 V 6/ 01 9 100 V/s see figure 3 10, 11 84 M, D 2/ 3/ 9 84 -SR VOUT= +5 V to -5 V 6/ 9 100 see figure 3 10, 11 84 M, D 2/ 3/ 9 84 Rise and fall time trVOUT= 0 to +200 mV, 6/ 01 9 50 ns see figure 3 10, 11 55 M, D 2/ 3/ 9 55 -tfVOUT= 0 to -200 mV, 6/ see figure 3 9 50 10, 11 55 M, D 2/ 3/ 9 55 Overshoot +OS VOUT= 0 to +200 mV, 6/ 01 9 40 % see figure 3 10, 11 45 M, D 2/ 3/ 9 45 -OS VOUT= 0 to -200 mV, 6/ 9 40 see figure