DLA SMD-5962-95684 REV C-2007 MICROCIRCUIT LINEAR RADIATION HARDENED FOUR CHANNEL PROGRAMMABLE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射四通道可编程运算放大器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95684 REV C-2007 MICROCIRCUIT LINEAR RADIATION HARDENED FOUR CHANNEL PROGRAMMABLE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射四通道可编程运算放大器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95684 REV C-2007 MICROCIRCUIT LINEAR RADIATION HARDENED FOUR CHANNEL PROGRAMMABLE OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射四通道可编程运算放大器硅单片电路线型微电路》.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes the common mode range test conditions. Update boilerplate. - rrp 97-10-27 R. MONNIN B Make changes to the descriptive designator under 1.2.4. Change ratings values under 1.3. Editorial changes throughout. - lgt 99-06-15 R. MONNIN C Add lo

2、w dose rate footnote to 1.5 and Table I. Delete Neutron and Latch-up parameters and corresponding footnotes under 1.5. Delete Accelerated aging test, Neutron testing, and Dose rate induced latchup testing paragraphs under 4.4.4. - ro 07-03-16 R. HEBER REV SHET REV SHET REV STATUS REV C C C C C C C C

3、 C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Rajesh Pithadia DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raym

4、ond Monnin AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-16 MICROCIRCUIT, LINEAR, RADIATION HARDENED, FOUR CHANNEL PROGRAMMABLE, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95684 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E304

5、-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two

6、 product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assuranc

7、e (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 95684 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number

8、 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designato

9、r. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-2400RH Radiation hardened, dielectric isolation (D.I.) four channel programmable, operational amplifier 1.2.3 Device class de

10、signator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535,

11、 appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.5 Lead finish. The lead finish i

12、s as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

13、43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage between +VSand -VS . 45 V Differential input voltage V Supply Voltage at either input terminal +VSto -VSDigital input voltage . -0.75 V to +10 V Peak output current (short circuit protected) . I

14、SC 33 mA Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (soldering 10 seconds) . +300C Maximum package power dissipation (PD) at TA= +125C 0.56 W 2/ Thermal resistance, junction-to-case (JC) . 26C/W Thermal resistance, junction-to-ambient (JA) 90C/W 1.4

15、Recommended operating conditions. Positive supply voltage (+VS) +15 V Negative supply voltage (-VS) . -15 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50-300 rads (Si)/s) 10 Krads (Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Gove

16、rnment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICA

17、TION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard

18、Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

19、 _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly. The derating is base

20、d on JAat the following rate: case outline E at 11.0 mW/C. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method

21、1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the

22、 event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The in

23、dividual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The indivi

24、dual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and h

25、erein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall

26、 be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirr

27、adiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.

28、5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. Fo

29、r RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for d

30、evice classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed

31、 manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submi

32、tted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certifica

33、te of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, no

34、tification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review t

35、he manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see M

36、IL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical per

37、formance characteristics. Limits Test Symbol Test conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Device type Group A subgroups Min Max Unit Input offset voltage VIO01 1 -9 +9 VCM= 0 V 2, 3 -11 +11 M, D 1 -11 +11 mV Input bias current +IB01 1 -200 +200 VCM= 0 V, +RS= 10 k, -RS= 100 2, 3

38、 -400 +400 M, D 1 -400 +400 -IB1 -200 +200 VCM= 0 V, +RS= 100 , -RS= 10 k 2, 3 -400 +400 M, D 1 -400 +400 nA Input offset current IIO01 1 -50 +50 VCM= 0 V, +RS= 10 k, -RS= 10 k 2, 3 -100 +100 M, D 1 -100 +100 nA +CMR 01 +9 Common mode range +VS= 6 V, -VS= -24 V VOUT= -9 V 2, 3 +9 M, D 1 +9 -CMR -9 +

39、VS= +24 V, -VS= -6 V VOUT= +9 V 2, 3 -9 M, D 1 -9 V +AVOL01 1 50 Large signal voltage gain VOUT= -10 V to +10 V, RL= 2 k 2, 3 25 M, D 1 25 kV/V+IOUTVOUT= +10 V 01 1 +10 Output current M, D 1 +7 -IOUTVOUT= -10 V 1 -10 M, D 1 -7 mA See footnotes at end of table Provided by IHSNot for ResaleNo reproduc

40、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Test condi

41、tions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Device type Group A subgroups Min Max Unit 1 80 VCM= +5 V, +VS= +20 V, -VS= -10 V, VOUT= -5 V 2, 3 80 +CMRR M, D 1 80 1 80 VCM= -5 V, +VS= +10 V, -VS= -20 V, VOUT= +5 V 2, 3 80 Common mode rejection ratio -CMRR M, D 01 1 80 dB 1 +10 RL= 2 k 2,

42、3 +10 +VOUTM, D 1 +10 1 -10 RL= 2 k 2, 3 -10 Output voltage swing -VOUTM, D 01 1 -10 V 1 +6 VOUT= 0 V 2, 3 +7 +ICCM, D 1 +7 1 -6 VOUT= 0 V 2, 3 -7 Power supply current -ICCM, D 01 1 -7 mA VSUP = 5 V, +VS= +20 V, -VS= -15 V, and +VS= +10 V, 1, 2, 3 74 +PSRR-VS= -15 V M, D 1 74 VSUP = 5 V, +VS= +15 V,

43、 -VS= -20 V, and +VS= +15 V, 1, 2, 3 74 Power supply rejection ratio -PSRR-VS= -10 V M, D 01 1 74 dB See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER

44、COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Test conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Device type Group A subgroups Min Max Unit VIN= 10 V Crosstalk CT01 1 -8

45、0 dB 1 1.5 VIL= 0 V 2, 3 1.5 IILM, D 1 1.5 1 1 VIH= +5 V 2, 3 1 Digital logic current IIHM, D 01 1 1.0 mA +SR1VOUT= -5 V to +5 V, 4/ see figure 4 4 6 Slew rate 1 -SR1VOUT= +5 V to -5 V, 4/ see figure 4 01 4 6 V/s Rise time trVOUT= 0 to +200 mV, 4/ see figure 4 01 4 45 ns Fall time tfVOUT= 0 to -200

46、mV, 4/ see figure 4 01 4 45 ns +OS VOUT= 0 to +200 mV, 4/ see figure 4 40 Overshoot -OS VOUT= 0 to -200 mV, 4/ see figure 4 01 4 40 % Unity gain 5/ 6/ bandwidth UGBW1 AV= +1, CCOMP= 15 pF, RL= 2 k, CL= 50 pF 01 9 4 MHz Gain bandwidth 5/ 6/ product GBWP2 AV= +10, CCOMP= 0 pF, RL= 2 k, CL= 50 pF 01 9

47、20 MHz Full power 5/ 6/ 7/ bandwidth 1 FPBW 1 AV= +1, CCOMP= 15 pF, RL= 2 k, CL= 50 pF, VOUT= 10 V 01 9 95 kHz Full power 5/ 6/ 7/ bandwidth 2 FPBW 2 AV= +10, CCOMP= 0 pF, RL= 2 k, CL= 50 pF, VOUT= 10 V 01 9 300 kHz See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or netwo

48、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95684 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Test conditions 1/ -55C TA +125C unless otherwise specified Device type Group A subgroups Min Max Unit Settling time 5/ 6/ TSET1AV= +1, CCOMP= 15 pF, RL= 2 k, CL= 50 pF, VO= 10 Vp-pto 0.1% of final v