DLA SMD-5962-94561 REV B-2009 MICROCIRCUIT LINEAR PRECISION VOLTAGE REFERENCE MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R018-96. 96-01-02 M. A. FRYE B Drawing updated to reflect current requirements. -rrp 09-09-30 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED B

2、Y Marcia B. Kelleher DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, PRECISION VOLTAGE REFERENCE, MONOLITHIC

3、 SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-09-22 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94561 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E242-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MIC

4、ROCIRCUIT DRAWING SIZE A 5962-94561 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (dev

5、ice class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94561 01 Q

6、G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels an

7、d are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit functio

8、n as follows: Device type Generic number Circuit function 01 LM169 Precision voltage reference 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification

9、to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descript

10、ive designator Terminals Package style G MACY1-X8 8 Can 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

11、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-94561 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VIN), Series mode . 35 V dc Reverse current, Shunt mode . 50 mA Power dissipation (PD) 600 mW ESD tol

12、erance (CZAP= 100 pF, RZAP= 1.5 k) 800 V Junction temperature (TJ) +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . 75C/W Thermal resistance, junction-to-ambient (JA) . 147.5C/W 1.4 Recommended operating conditio

13、ns. Supply voltage range 13 V dc to 17 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unles

14、s otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. M

15、IL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from

16、 the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however,

17、 supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo

18、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94561 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device

19、 classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device cla

20、ss M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or M

21、IL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connection. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limit

22、s. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgrou

23、ps specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to spac

24、e limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with M

25、IL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For de

26、vice classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approv

27、ed source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or

28、for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliv

29、ered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For

30、device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Dev

31、ice class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94561 DEFENSE SUPPLY CENTER COLUMBUS COLUM

32、BUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C, 13 V VIN 17 V, 0 mA ILOAD 1.0 mA, CL 200 pF unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min Max Thermal regulation so

33、urcing 2/ TRSORt = 10 ms after load is applied 1 01 -20 20 ppm/100 mW VOUTtemperature coefficient 3/ VTC2, 3 01 5.0 ppm/C Line regulation 4/ VRLINE13 V VIN 30 V 1 01 4.0 ppm/V 2, 3 8.0 Supply current IS1 01 1.1 1.8 mA 2, 3 0.3 2.0 Delta supply current IS1 01 -120 120 A 2, 3 350 350 Short circuit cur

34、rent IS1 01 15 50 mA 2, 3 11 65 Output voltage error VOUTETA= +25C 1 01 -500 500 ppm/mV Output voltage VOUT1 01 9.995 10.005 V 2, 3 8.500 11.500 Load regulation sinking 5/ VRLOADSINK0 mA to -10 mA 1 01 150 ppm/mA 2, 3 350 Load regulation sourcing 6/ VRLOADSOR0 mA to 10 mA 1 01 -8.0 8.0 ppm/mA 2, 3 -

35、20.0 20.0 1/ The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 2/ Thermal regulation is defined as the change in the output voltage at

36、 a time T after a step change of power dissipation of 100 mW. 3/ Temperature coefficient of VOUTis defined as the worst-case delta VOUTmeasured at specified temperature divided by the total span of the specified temperature range. 4/ ppm of VOUTnominal per volt of input voltage change. 5/ In sinking

37、 mode, connect 0.1 F tantalum capacitor from output to GND. PPM of VOUTnominal per mA of output current change. 6/ Regulation is measured at constant temperature using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are covered under the specifications for therm

38、al regulation and temperature coefficient. Load regulation is measured at a point on the output pin 1/8 inch below the bottom of the package. The part will exhibit transient at the crossover point. The point occurs when the device is required to sink approximately 1.0 mA. In some applications it may

39、 be advantageous to pre-load the output to either VINor to GND, to avoid this crossover point. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94561 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 RE

40、VISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outline G Terminal number Terminal symbol 1 NC 2 VIN+3 NC 4 GND 5 FILTER AND TRIM 6 VOUT7 NC 8 NC FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDAR

41、D MICROCIRCUIT DRAWING SIZE A 5962-94561 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as

42、 modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device

43、 classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior

44、 to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing

45、 or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified

46、in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintain

47、ed under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as a

48、pplicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL