DLA SMD-5962-94537-1994 MICROCIRCUIT DIGITAL CMOS 8-BIT MEMORY PROCESSING UNIT MONOLITHIC SILICON《硅单片 8位记忆处理单元 氧化物半导体数字微型电路》.pdf

《DLA SMD-5962-94537-1994 MICROCIRCUIT DIGITAL CMOS 8-BIT MEMORY PROCESSING UNIT MONOLITHIC SILICON《硅单片 8位记忆处理单元 氧化物半导体数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-94537-1994 MICROCIRCUIT DIGITAL CMOS 8-BIT MEMORY PROCESSING UNIT MONOLITHIC SILICON《硅单片 8位记忆处理单元 氧化物半导体数字微型电路》.pdf（28页珍藏版）》请在麦多课文档分享上搜索。

1、LTR DESCRIPTION PREPARED BY Thomas M. Hess DATE (YR-MO-DA) APPROVED CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking REV SHEET REV SHEET DRAWING APPROVAL DATE 94-09-28 15 16 17 REVISION LEVEL , SHEET 1 OF 27 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, CMOS, 8-

2、BIT MEMORY PROCESSING UNIT, MONOLITHIC SILICON 5962-94537 67268 5962-E163-94 DISTRIBUTION STATEMENT A. Approved for public release: distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-94537 Federal RHA i?IL Device Devi

3、 ce Case Lead IL stock class designator type e i ass outline finish designator (see 1.2.1) designator (see 1.2.4) (see 1.2.5) (see 1.2.2) 1 (see 1.2.3) v Drawing nvnber L = 999999b 0064325 BI6 STANDARD1 ZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SI XE 5962-94537 A REVI

4、SION LEVEL SHEET 2 1.2.3 Device class designator. lhe device class designator shall be a single letter identifying the product assurance level as follows: Device class Device reauirements docunentation I M Vendor self-certification to the requirements for non-JAN class 6 microcircuits in accordance

5、with 1.2.1 of MIL-STD-883 P or V Certification and qualification to MIL-1.38535 1.2.1 Case outline(s1. lhe case outline(s) shall be as designated in MIL-STO-1835 and as follows: Outline letter Descriptive designator Terminals Packaqe style X CMA15 - P68 68 pin grid array Provided by IHSNot for Resal

6、eNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-94537 77779b 0064326 752 W 1.3 Absolute marimum ratings. L/ S TANDARDI 2 ED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 Supply voltage range (Vc ) input voltage range (vIN Maximum power tiissipat

7、ion (PD): Norma 1 opera t i on . System stop mode . Operating junction tenperature . Operating case temperature . Storage temperature range Lead temperature (soldering, 5 seconds) . Thermal resistance, junction to case (eJC) . . SIZE 5962-94537 A REVISION LEVEL SHEET -0.3 V dc to +7.0 V dc -0.3 V dC

8、 to Vcc + 0.3 V dC 330 mH 96.25 mW 145C -55OC to +125OC -65OC to +150C 275C See MIL-STD-1835 1.4 Recomnded opera t i nq condi ti ons . Supply voltage range Case operating temperature range -55C to +125“C +4.5 V dc to +5.5 V dc 1.5 Diqital logic testinq for device classes Q and V. Fault coverage meas

9、urement of manufacturing logic tests (MIL-STD-883, test method 5012) XX percent z/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of

10、the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPEC IF ICATION MILITARY MIL-I -38535 - Integrated Circuits , Manufacturing , Genera 1 Spec i f icat ion for. STANDARDS MILITARY MIL-STD-883 - Te

11、st Methods and Procedures for Microelectronics. MIL-STO-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN MIL ITARY MIL-BUL-103 - List of Standardized Military Drawings (SMOs). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Mi 1 itary Drawings. (Copies of the specifi

12、cation, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. ) - i/ Stresses above the absolute maximum rating may cause permanent damage to the devic

13、e. maximum levels may degrade performance and affect rei iabi 1 ity. g/ Values will be added when they become avaiiable. - Extended operation at the DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-94537 2.2 Order of wec

14、edence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REWIREMENTS 3.1 MIL-STD-883, herein. device manufacturers auality Uanagement (a) plan, and as specified herein. specified in MIL-STD-883 (see 3.1 he

15、rein) for device class M and MIL-1-38535 for device classes and V and herein. lhe case outiine(s) shall be in accordence with 1.2.4 herein. Item reauirenients. The individual item requirements for device class M shall be in accordance uith 1.2.1 Of for the use of NIL-STO-883 in conjunction uith conp

16、liant non-JAU devices and as specified The individual item requiremnts for device classes a and V shall be in accordance with NIL-1-38535, the 3.2 Design. construction. and Dhysicat dimensions. The design, construction, and physical dimensions shall be as 3.2.1 Cese outline(s1. 3.2.2 Terminal comect

17、ions. 3.2.3 Block diagram. 3.2.4 Radiation extutsure circuit. 3.3 Electrical rrerformance characteristics and postirradiation parameter limits. The terminal connections shell be as specified on figure 1. The block diagram shall be as specified on figure 2. The radiation exposure circuit shall be spe

18、cified when applicable. Unless otherwise specified I herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements

19、shali be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Markina. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein). MIL-BUC-103. In addition, the man

20、ufacturers PIN may also be marked as listed in Marking for device classes Cl and V shall be in accordance uith MIL-1-38535. 3.5.1 Certification/cmliance mark. The conpliance mark for device class M shall be a WI es required in MIL-STD-883 (see 3.1 herein). in MIL-1-38535. The certification mark for

21、device classes Q and V shall be a I1QMLt1 or Wt as requited 3.6 Certificate of corPolience. For device class Ml a certificate of ccnipliance shall be required from a manufacturer in order to be Listed as an approved source of supply in MIL-8UL-103 (see 6.7.2 herein). classes Q and V, a certificate o

22、f conpliance shall be required from a OML-38535 listed manufacturer in order to supply to the requirements of this drauing (see 6.7.1 herein). The certificate of compliance submitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers prod

23、uct meets, for device class M, the requirements of MIL-STO-883 (see 3.1 herein), or for device classes CI and V, the requirements Of MIL-1-38535 and the requirements herein. For device 3.7 Certificate of conformance. A Certificate of conformance as required for device class H in MIL-STD-883 (See 3.1

24、 herein) or for device classes O and V in MIL-1-38535 shalt be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DESC-EC of change of product (see 6.2 herein) involving devices acquired to this drawin

25、g is required for any change as defined in MIL-STO-973. 3.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity Offshore documentation retain the option to review the manufacturers facility and applicable required documentation. shall be made

26、 available onshore at the option of the reviewer. 3.10 Microcircuit grow assignnent for device class M. Device class c( devices covered by this drauing shall be in microcircuit group nunber 105 (see MIL-1-38535, appendix A). 4. WALITY ASSURANCE PROVISIONS 4.1 Samlins and insriection. For device clas

27、s Ml sampling and inspection procedures shall be in accordance uith MIL-STD-883 (see 3.1 herein). with MIL-1-38535 and the device manufacturers QM plan. For device classes 9 and VI sampling and inspection procedures shall be in accordance I I STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY

28、CENTER I DAY!CON, OHIO 45444 - SIZE I A I 5962-94537 SHEET I 4 REVISION LEVEL I DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Vcc-0.6 Vcc+0.3 2.0 Vcc+0.3 SIZE A 5962-94537 REVISION LEVEL SHEET 5 TABLE I. Electrical Derformance

29、 characteristics. Test Conditions -55C S T S +125C I/ unless ofherwise specified 4.5v s vc F 5:5v, Vss.OOv Group A subgroups Limits Unit Hi-vel inputvoltage RESET, EXTAL, NMI IHI vcc = 4.5v V 1 H2 High leve-t voltage except RESET, EXTAL, NMI Loue1 input ;T OF-CODE FY:H- 3 rl -1 U STANDARD1 ZED MILIT

30、ARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SLP EXECUTION CYCLE SIZE 5962-94537 A REVISION LEVEL SHEET 19 CSI/O CLOCK TRANSMIT DATA (INTERNAL CLOCKI TAANSMIT DATA IEXTCRNAL CLOCK1 RECEIVE DATA IINTERNAL CLOCKI RECEIVE DATA EXTERNAL CLOCK) CS110 RECEIVE/TRANSMIT TIHING Provided b

31、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-UNDER TEST STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE 5962-94537 A REVISION LEVEL SHEET 20 Provided by IHSNot for ResaleNo reproduction or networking permitted without

32、 license from IHS-,-,-4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, arid shall be conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-1-38535, and shall be condu

33、cted on all devices prior to qualification and technology conformance inspect i or:, STANDARD1 ZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 4.2.1 Additional criteria for device class M. SIZE 5962-94537 A REVISION LEVEL SHEET 21 a. Burn-in test, method 1015 of MlL-STD-883

34、. (1) Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. shall specify the inputs, outputs, biases, and pouer dissipation, as applicable, in accordance with

35、the intent specified in test method 1015. The test circuit (21 TA = +125OC, minimm. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test tenperature, or ap

36、proved alternatives shall be as specified in the device manufacturers PM plan in accordance with MIL-1-38535. maintained under docunent revision level control of the device manufacturers Technology Review Board URBI in accordance with MIL-1-38535 and shall be made available to the acquiring or prepa

37、ring activity upon request. The test circuit shall specify the inputs, outputs, biases, and pouer dissipation, as applicable, in accordance uith the intent specified in test method 1015. Interim and final electrical test parameters shall be as specified in table 11 herein. Additional screening for d

38、evice class V beyond the requirements of device class 0 shall be as specified in appendix B of MIL-1-38535. The burn-in test circuit shall be b. c. 4.3 Qualification inswction for device classes Q and V. Qualification inspection for device classes Q and V shall Inspections to be performed shall be t

39、hose specified in MIL-1-38535 and herein for be in accordance with MIL-1-38535. groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.41. 4.4 Conformance insmction. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein) and as specified herei

40、n. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, E, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conforinence inspection for classes Q and V shall be in accordance with MIL-1-38535 including groups A, B

41、, C, b, and E inspections and as specified herein except where option 2 of MIL-1-38535 permits alternate in-line control test i ng . 4.4.1 Group A inspection. a. b. Tests shall be as specified in table II herein. For device class H, subgroups 7 and 8 tests shall be sufficient to verify the functiona

42、lity of the device. For device classes 12 and V, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in accordance with MIL-STO-883, test method 5012 (see 1.5 herein). Subgroup 4 (Cp) measurements shall be measured only for the initial

43、test and after process or design changes which may affect capacitance. A minimm sample size of five devices uith zero rejects shall be required. c. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table 11 herein. DESC FORM 193A JUL 91 Provide

44、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-94537 parameters (see 4.2) 1 parameters (see 4.2) DESC FORM 193A JUL 91 9, 10, 11 requirements (see 4.4) I 9, 10, 11 8, 9, 10, 11 8, 9, 10, 11 parameters (see 4.4) I I STANDARD1 ZED MILITARY DRAWING D

45、EFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SI SE 5962-94537 A REVISION LEVEL SHEET 22 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I SMD-5762-94537 9999996 0064346 540 = 4.4.2.2 Addit!onal criteria for device classes 9 and V. The steady-s

46、tate life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers PH plan in accordance uith MIL-1-38535. manufacturers TRB, in accordance with HIL-1-38535, and shall be made available to the acquiring or preparing activity upon

47、request. accordance with the intent specified in test method 1005. herein. The test circuit shall be maintained under docunent revision level control by the device The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in 4.4.3 Grow D inswction. The group D

48、 inspection end-point electrical parameters shall be as specified in table II STRNDARDI ZED SI SE 5962-94537 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 23 F 4.4.4 Grow E inspection. Group E inspection is required only for parts intended to be marked

49、as radiation hardness assured (see 3.5 herein). M shall be M and D. RHA levels for device classes P and V shall be M, D, R, and H and for device class a. b. End-point electrical parameters shall be es specified in table i1 herein. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-1-38535, appendix A, for the RHA level being tested.