DLA SMD-5962-90815 REV B-2001 MICROCIRCUIT LINEAR HIGH SPEED BUFFER MONOLITHIC SILICON《硅单块 高速缓冲器直线式微型电路》.pdf
《DLA SMD-5962-90815 REV B-2001 MICROCIRCUIT LINEAR HIGH SPEED BUFFER MONOLITHIC SILICON《硅单块 高速缓冲器直线式微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90815 REV B-2001 MICROCIRCUIT LINEAR HIGH SPEED BUFFER MONOLITHIC SILICON《硅单块 高速缓冲器直线式微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing being updated to reflect current requirements. - ro 00-09-13 R. MONNIN B Make change to FLAG pin output high current test as specified in table I. - ro 01-11-13 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHE
2、T REV SHET REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY JOSEPH A. KERBY DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY
3、 ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH SPEED BUFFER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 91-12-16 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-90815 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E072-02 DISTRIBUTION
4、STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC
5、 FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Numbe
6、r (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90815 01 M G X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2
7、) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spe
8、cified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM6125 High speed buffer 1.2.3 Device class designator. The d
9、evice class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q o
10、r V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for dev
11、ice classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSC
12、C FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) 18 V Input to output voltage 7 V 2/ Input voltage (VIN) VSFLAG output voltage .GND VFLAG +VSOutput short-circuit to GND Continuous 3/ Power dissipation (PD) .750 mW 4/ Storage temperature range -65C to +150C Junction temperature
13、 (TJ) .+150C Lead temperature (soldering, 10 seconds) .+260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) .150C/W 1.4 Recommended operating conditions. Supply voltage (VS) 15 V Ambient operating temperature range (TA) -55C to +125C 2. APPLIC
14、ABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defens
15、e Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL
16、-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ During current limit or thermal limit, the input cu
17、rrent will increase if the input to output differential voltage exceeds 8 V. For input to output differential voltages in excess of 8 V the current should be limited to 20 mA. 3/ This buffer device contains current limit and thermal shutdown to protect against fault conditions. 4/ For operation at e
18、levated temperatures, derate based on thermal resistance of JAand TJmax, with TJ= TA+ (JAx PD). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 R
19、EVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardizatio
20、n Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applica
21、ble laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (
22、QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, an
23、d physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Termi
24、nal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table
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