DLA SMD-5962-87615 REV E-2007 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD TWO-INPUT AND GATE MONOLITHIC SILICON《硅单块 四列二输入是门 高级互补金属氧化物半导体 数字微型电路》.pdf

《DLA SMD-5962-87615 REV E-2007 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD TWO-INPUT AND GATE MONOLITHIC SILICON《硅单块 四列二输入是门 高级互补金属氧化物半导体 数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-87615 REV E-2007 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD TWO-INPUT AND GATE MONOLITHIC SILICON《硅单块 四列二输入是门 高级互补金属氧化物半导体 数字微型电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change ac limits in table I. Add vendor CAGE 18714 to device type 01CX. Editorial changes throughout. 87-11-18 M. A. Frye B Add device type 02, add case outline E and CAGE code 01295. Made editorial changes throughout document. 89-10-02 M. A. Fry

2、e C Add vendor CAGE F8859. Add device Class V criteria. Add delta limits, table III. Add case outline X. Update boilerplate. Editorial changes throughout. lgt 00-11-01 Raymond Monnin D Add section 1.5, radiation features. Add test circuit in figure 4. Update the boilerplate to include radiation hard

3、ness assured requirements. Editorial changes throughout. - jak 03-12-09 Thomas M. Hess E Add appendix A, microcircuit die. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assurance requirements. - jak 07-03-08 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHET REV

4、 E E E E E E E SHEET 15 16 17 18 19 20 21 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.ds

5、cc.dla.mil APPROVED BY Michael A. Frye THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-05-27 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT AND GATE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 14933 5962

6、-87615 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E237-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-87615 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 A

7、PR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Whe

8、n available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: For device classes M and Q: 5962 - 87615 01 C A Federal RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.

9、2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 F 87615 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Devi

10、ce classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a n

11、on-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC08 Quad two-input AND gate 02 54AC11008 Quad two-input AND gate 1.2.3 Device class designator. The device class designator is a single letter identifyi

12、ng the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vend

13、or self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

14、,-,-SIZE A 5962-87615 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Pac

15、kage style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MI

16、L-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) 20 mA DC output cur

17、rent. 50 mA DC VCCor GND current (per pin) . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) 500 mW Lead temperature (soldering, 10 seconds). +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 Recommended

18、operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating temperature range (TC). -55C to +125C Minimum input rise or fall rate (tr, tf): VCC= 3.6 V 0 to 8 ns VCC= 5.5 V 0 to

19、8 ns 1.5 Radiation features. Device type 01: Total dose (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single Event Latchup (SEL) or Single Event Upset (SEU). 93 MeV-cm2/mg 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum l

20、evels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not b

21、e exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored da

22、ta loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCCat 20 A, VOL 30% VCCat 20 A. 6/ Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or ne

23、tworking permitted without license from IHS-,-,-SIZE A 5962-87615 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specif

24、ication, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Spe

25、cification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings

26、. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a p

27、art of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CM

28、OS Devices. (Copies of this document is available online at www.eia.org/ or from the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) In

29、duced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of

30、this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device cla

31、sses Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M

32、 shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

33、om IHS-,-,-SIZE A 5962-87615 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-385

34、35 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth t

35、able shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit s

36、hall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance

37、 characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup

38、are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking th

39、e “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. T

40、he certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be requi

41、red from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The cert

42、ificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix

43、A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device clas

44、s M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity re

45、tain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcir

46、cuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-87615 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR

47、 97 TABLE IA. Electrical performance characteristics. Limits 4/ Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Unless otherwise specified Device type and Device class VCCGroup A subgroups Min Max Unit Positive input clamp voltage 3022 VIC+For input u

48、nder test, IIN= 1.0 mA All Q, V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All Q, V Open 1 -0.4 -1.5 V 3.0 V 2.9 4.5 V 4.4 VIN= VIHminimum or VILmaximum IOH= -50 A All All 5.5 V 1, 2, 3 5.4 2, 3 2.4 VIN= VIHminimum or VILmaximum IOH= -12 mA All All 3.0 V 1 2.56 2, 3 3.7 4.5 V 1 3.86 2, 3 4.7 VIN= VIHminimum or VILmaximum IOH= -24 mA All All 5.5 V 1 4.86 High level output voltage 3006 VOH 5/ VIN