DLA SMD-5962-87603 REV B-1992 MICROCIRCUIT HIGH PERFORMANCE CMOS 9-WIDE AND 10-WIDE BUS INTERFACE LATCHES MONOLITHIC SILICON《硅单块 高性能互补金属氧化物半导体9宽和10宽总线连接设备门闩线路 微型电路》.pdf
《DLA SMD-5962-87603 REV B-1992 MICROCIRCUIT HIGH PERFORMANCE CMOS 9-WIDE AND 10-WIDE BUS INTERFACE LATCHES MONOLITHIC SILICON《硅单块 高性能互补金属氧化物半导体9宽和10宽总线连接设备门闩线路 微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87603 REV B-1992 MICROCIRCUIT HIGH PERFORMANCE CMOS 9-WIDE AND 10-WIDE BUS INTERFACE LATCHES MONOLITHIC SILICON《硅单块 高性能互补金属氧化物半导体9宽和10宽总线连接设备门闩线路 微型电路》.pdf(16页珍藏版)》请在麦多课文档分享上搜索。
1、SMD-5362-87603 REV B 9999996 0030560 319 H REVISIONS LTR DESCRIPTION A Add PRESET and CLEAR propagation delays to table I for device types O2 and 04. figure 4. Editorial changes throughout. Change B Added devices 05 and 06. Changes to table I. . Editorial changes throughout. REV I I =+-j= SHEET REV
2、STATUS OF SHEETS PMIC NIA STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA 92/11/02 /L/44 REV BBBBBEBBBBBBBB SHEET 12 3 4 5 6 7 8 9 1011121314 -1 PREPARED BY Ray Monnin DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO
3、 45444 CHECKED BY Dan Oi Cenzo APPROVED BY N.A.Hauck DRAWING APPROVAL DATE MICROCIRCUIT, HIGH PERFORMANCE CMOS 9-WIDE AND lo-WIDE BUS INTERFACE LATCHES, MONOLITHIC SILICON 87-09-10 . SIZE CAGE CODE 5962-87603 REVISION LEVEL A 67268 B SHEET 1 OF 15 - JUL 91 DISTRIBUTION STATEMENT A. Approved for publ
4、ic release: distribution is unlimited. 5962-E667-92 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-87603 REV B m 9999996 0030563 255 m K L 3 1 1.3 Absolute aaxiarm ratinqs. Supply voltage range Input voltage range Storage tentperature range
5、 - Naximum per dissipation PD DC output diode current: Into output . uitput voltage range Out of output Into input Out of input OC input diode current: OC output current per pin: 1. SCOPE 1.1 cope. This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-S
6、TD-883, “Provisions for the use of HIL-STD-883 in conjunction with mapliant non-JAN devices“. 1.2 Part or Identifyinq Number (PIN). The complete PIN shall be as shown in the following example: K X I 5962-87603 - o1 - I 1 I I I I I I STADAWIZED MILITARY DEAWBG DEFEWSE ELECTRO#ICS SPPLY CENTER DAYTO,
7、OHIO 45444 Lead finish per Case outline Devi ce type Drawing number (see 1.2.1) (see 1.2.2) HIL-H-38510 SIZE 5962-87603 r REVISION LEVEL SEET 1.2.1 Device type(s). The device typds) shall identify the circuit function as follows: Device type Generic nuber Circuit function o1 o2 03 04 o5 o6 29c841 29
8、c843 29941 29c943 29c861 A 29C843A High performance CHS 10-wide bus interface latch High performance CMS 9-wide bus interface latch High performance CMOS 1Oride bue interface Latch !/ High perforaance CnOS 9-wide bus interface latch I/ High performance Cnos 10-wide bus interface latch High perforaan
9、ce CnOS 9-uide bus interface latch 1.2.2 Case wtline(t1. The case outlineW shall be as designated in WIL-ST-1835 and as follows: Outline letter Descript ive designator Terminals Padcage style GDFPZ-F24 or 24 Flat package GDIP3-TZ4 or 24 ual-in-line package CQCCI -a8 28 Square chip carrier CDFP3-F24
10、CD I P4-F24 . . . . . . . . -0.5 Y dc to +7.0 V dc -0.5 V dc to 6.0 if dc 4.5 V dc to 6.0 V dc - -65OC to +150C 500 .u +!a .A -50 an +M E4 -20 .Iri sink Is ure Device types M - O4 . Device types 05, O6 . +I00 aA 8evice types 01 - 04 . Device types 05, O6 . -100 iA +i) -55C to +125C 2. APPLICABLE DOC
11、UMENTS 2.1 Government specification, standard, and bulletin. Unless otherwise specified, the following specification, standard, and bulletin of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing
12、 to the extent specified herein. SPECIFICATION MILITARY SIZE 5962-87603 A REVISION LEVEL SHEET MIL-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BU
13、L-103 - List of Standardized Military Drawings (SMDs). (Copies of the specification, standard, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedenc
14、e. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD
15、-883 in conjunction with compliant non-JAN devices“ and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-M-38510 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.
16、2.2 herein. 3.2.2 3.2.3 3.2.4 3.3 Electrical performance characteristics. Terminal connections. Truth table. Lcqic diagram. The terminal connections shall be as specified on figure 1. The truth table shall be as specified on figure 2. The logic diagram shall be as specified on figure 3. Unless other
17、wise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each
18、 subgroup are described in table I. DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics. Conditions I Group A IDevicc I Limits I Unit -55C 5 Tc 5 +125C I subgroups I type I I 4.5 v 5 V
19、CF 5 5.5 v I I I I I I I unless otherwise specified I I I I I I I I I I I I I I I I vol-tage IVIN = VIL or VIH I I I I I I I I I I I voltage I IVIN = VIH or VIL I 1-1 I I I I I IoL = 32 nR I 105,a I I I I I I I I I I I I I I I I I I I I I I I I I 1,2,3 IM-04 I I -10 I w I 1-1 1-1 I I I lW,W I I -5 I
20、 I 1- I I I I 101-04 I I -5 I PA I I I IIIu IV, = 5.5 V, VIN = 0.4 V I I I I I I I I I I I 101-04 I l5lW current J I I 1- I I I I I I I I lM-04 I 110 I W IIIHz IVcc 5.5 v, VIN = 5.5 v .I 1-1 1-1 I I I I I lP I I51 I I I I I I I I I I I I I I 1 I I I I I I I - I/ I I I I I I I I I I I I I loutputs I
21、0.0 v I IA I I I I I I I I IV, 3.4 VI Data I I All I Jinput I LI J I bit I I I I I, I I I I I I I I IOE,LE I 1l,o3 I I I I LI LI J I bit I I I I- I I I I I I PRE, CLR I 106 I I bit I I I 1 Min I Max I ISyhL I Test IV High level output IVOH IVcc = 4.5 V, Ia = -15 nA 1 1,2,3 I All I 2.4 I I I 0.5 I V
22、Lou level output IV, IVcc = 4.5 V, IoL = 24 OA I 1,ee footnotes at end of table. STMDARDIZED MILITARY DRAWIIG DEFERSE ELECTRONICS SUPPLY CENTER SIZE 5962-87603 A DAYTON, OHIO 45444 I REVISION LEVEL I SHEET I I B I 4 DESC FORM 193A JUL i1 Provided by IHSNot for ResaleNo reproduction or networking per
23、mitted without license from IHS-,-,-SMD-5762-87603 REV B = 7777776 0030564 T64 TABLE I. Electrical performance characteristics - Continued. I I I I I I Test ISymbol I Conditions I Group A (Device 1 Limits I Unit -55C 5 TC 5 +125“C Isubgroupsl type I I 4.5 v 5 vcc 5 5.5 v I I I I I I Min I Max I I I
24、l I unless otherwise specified I I I I I I I I I I l l I 1 I I I I 16 I PF I l IL l I I I I I I I 20 I PF I l I I I I l I I I I I I I I I I I data (Di) to Yi I I I 1-1 1-1 (LE = HIGH) I I CL 50 pF, RI = 50.2, I (05,06 I I 8.5 I data (Di) to Yi I I 1-1 1-1 (LE = HIGH) l I I 105,06 I I 8.5 I Input-cap
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