DLA SMD-5962-87598 REV A-2006 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单块 晶体管阵列高电流NPN 直线型微型电路》.pdf
《DLA SMD-5962-87598 REV A-2006 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单块 晶体管阵列高电流NPN 直线型微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87598 REV A-2006 MICROCIRCUIT LINEAR HIGH CURRENT NPN TRANSISTOR ARRAY MONOLITHIC SILICON《硅单块 晶体管阵列高电流NPN 直线型微型电路》.pdf(8页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - drw 06-09-22 Raymond Monnin THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED REV SHET REV SHET REV STATUS REV A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 PMIC N/A P
2、REPARED BY Joseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles Reusing COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, HIGH CURRENT NPN, AND AGENCIES OF
3、 THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-01-05 TRANSISTOR ARRAY, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-87598 SHEET 1 OF 7 DSCC FORM 2233 APR 97 5962-E665-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
4、-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MI
5、L-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-87598 01 E A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type. The device type identifies the circuit function as follows:
6、Device type Generic number Circuit function 01 3183A High current NPN transistor array 1.2.2 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 and CDIP2-T16 16 Dual-in-line 1.2.3 Lead finish. The lead
7、 finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Collector current 100 mA Base current 20mA Power dissipation (PD): Any one transistor 500 mW Total package. 750 mW 1/ Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal res
8、istance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C _ 1/ Derate linearly above TA= +25C at 6.67 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without
9、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and ha
10、ndbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT
11、 OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documen
12、ts are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the
13、references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF
14、-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be proces
15、sed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect for
16、m, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, constructio
17、n, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics.
18、 Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrica
19、l tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number i
20、s not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” sha
21、ll be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87598 DEFENSE SUPPLY CENTER
22、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxCollector-substrate breakdown voltage BVCSOIC= 100 A 1,
23、 2, 3 01 50 V Collector-base breakdown voltage BVCBOIC= 100 A 1, 2, 3 01 50 V Collector-emitter breakdown voltage BVCEOIC= 1.0 mA 1, 2, 3 01 40 V Collector cutoff current ICEOVCE= 10 V 1, 2, 3 01 10 A Collector cutoff current ICBOVCB= 10 V 1, 2, 3 01 1 A Input offset voltage VIOVCE= 3 V, IC= 1 mA 1,
24、 2, 3 01 5 mV Input offset current IIOVCE= 3 V, IC= 1 mA 1, 2, 3 01 2.5 A Emitter-base breakdown voltage BVEBOIE= 100 A 1, 2, 3 01 5.0 V DC forward current transfer ratio hFEVCE= 3.0 V, IC= 10 mA 1 01 50 2, 3 40 VCE= 5.0 V, IC= 50 mA 1 40 2, 3 35 Collector-emitter saturation voltage VCE(SAT) IC= 50
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596287598REVA2006MICROCIRCUITLINEARHIGHCURRENTNPNTRANSISTORARRAYMONOLITHICSILICON 硅单块 晶体管 阵列 电流

链接地址:http://www.mydoc123.com/p-699026.html