DLA SMD-5962-00501 REV D-2008 MICROCIRCUIT LINEAR RADIATION HARDENED PRECISION VOLTAGE REFERENCE MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to 3.2.3 and delete the radiation exposure circuit as specified in figure 3. - ro 00-10-31 R. MONNIN B Drawing updated to reflect current requirements. - gt 02-04-18 R. MONNIN C Add device type 02 tested at Low Dose Rate. Make changes

2、 to 1.2.2, 1.5, table I, figure 2, table IIB, and 4.4.4.1. Deleted accelerated aging test. -rrp 07-07-09 ROBERT M. HEBER D Add paragraph 3.1.1 and die Appendix A. Make change to footnote 1/ as specified under Table I. - ro 08-10-29 ROBERT M. HEBER REV SHET REV D D D D SHEET 15 16 17 18 REV STATUS RE

3、V D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA CHECKED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY RAYMOND MONNIN STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAI

4、LABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-01-13 MICROCIRCUIT, LINEAR, RADIATION HARDENED, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-00501 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E51

5、5-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents tw

6、o product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assuran

7、ce (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 00501 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing numbe

8、r 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designat

9、or. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM136A 2.5 V, precision voltage reference 02 LM136A 2.5 V, precision voltage reference 1.2.3 Device class designator. The devic

10、e class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V

11、Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 3 TO-46 can 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 f

12、or device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET

13、 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Reverse current . 15 mA Forward current . 10 mA Storage temperature range -60C to +150C Lead temperature (soldering, 10 seconds) 300C Maximum junction temperature (TJ) 150C 2/ Thermal resistance, junction-to-case (JC) 46C/W Thermal resistance

14、, junction-to-ambient (JA) . 354C/W still air 77C/W 500 LFPM air flow 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. 3/ Maximum total dose available (dose rate = 50 300 rad(Si)/s): Device class V (device type 01) . 100 Krad(Si)

15、Maximum total dose available (dose rate = 10 mrad(Si)/s): Device class V (device type 02) . 100 Krad(Si) The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL

16、-STD-883 Method 1019 paragraph 3.13.1.1. Therefore this part may be considered ELDRS free. However, the manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method 1019 of MIL-STD-883

17、. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device was ELDRS, the part number will be changed to an 02 to distinguish this part from the 01 device. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specif

18、ication, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Spe

19、cification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels m

20、ay degrade performance and affect reliability. 2/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ, JA, and TA. The maximum allowable power dissipation at any temperature is PD= (TJMAX TA) / JAor the number given in the absolute maximum ratings, whichever

21、is lower. 3/ For device type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 1019, condition A. For devi

22、ce type 02, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

23、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircui

24、t Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing a

25、nd the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V s

26、hall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in a

27、ccordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions

28、shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specif

29、ied on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradia

30、tion parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements

31、shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not

32、 feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be

33、 in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate

34、of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to b

35、e listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF

36、-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot o

37、f microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I

38、. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Adjust current IADJVADJ= 0.7 V 1, 2, 3 01, 02 -125 +125 A M, D, P, L, R 1 -125 +125 Delta zener voltage Z 400 A IZ 10 mA 1 01, 02 6 mV

39、2, 3 10 M, D, P, L, R 1 6 Zener voltage VZVADJ= Open 1 01, 02 2.465 2.515 V 2, 3 2.44 2.54 M, D, P, L, R 1 2.465 2.515 VADJ= 0.7 V 1 2.39 2.49 2, 3 2.29 2.49 M, D, P, L, R 1 2.39 2.49 VADJ= 1.9 V 1, 2, 3 2.49 2.69 M, D, P, L, R 1 2.49 2.69 ZRD4/ 1 01, 02 0.6 Reverse dynamic impedance 2, 3 1 Temperat

40、ure stability VSTABVZ= Adjusted to 2.490 V 2, 3 01, 02 18 mV 1/ Devices supplied to this drawing have been tested through all levels M, D, P, L, R of irradiation. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurem

41、ents for any RHA level, TA= +25C. 2/ For device type 01, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 101

42、9, condition A. For device type 02, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D. 3/ IZ= 1 mA, unless otherwise specified. 4/

43、 Parameter tested go-no-go only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 Case X FIGURE 1.

44、Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 Case X Symbol Inches Millimeters Min

45、 Nom Max Min Nom Max A .080 .105 2.03 2.67 b .016 .0175 .019 .406 .445 .483 b1.016 .0175 .019 .406 .445 .483 D .209 .212 .215 5.31 5.38 5.45 D1.183 .185 .187 4.65 4.70 4.75 e .100 NOM 2.54 NOM e1.050 NOM 1.27 NOM F .030 0.76 k .028 .038 .048 .711 .965 1.22 k1.028 .038 .048 .711 .965 1.22 L .500 12.7

46、0 L1.025 0.64 L2.250 6.35 45 T.P. 45 T.P. NOTES: 1. The US government preferred system of measurement is the metric SI system. However, this item was originally designed using inch-pound units of measurement. In the event of conflict between the metric and inch-pound units, the inch-pound units shal

47、l take precedence. 2. b applies between L1and beyond .500 inch (12.70 mm) from the seating plane (three leads). Diameter is uncontrolled in L1and beyond .500 inch (12.70 mm) from the seating plane. 3. Leads to be located within .007 inch (0.18 mm) of their true positions relative to a maximum width

48、tab. FIGURE 1. Case outline Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00501 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 Device type 01, 02 Case outline X Terminal number Terminal symbol 1 ADJUSTMENT 2 + 3 FIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO