DLA MIL-PRF-19500 697 E-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPE 2N7478T1 JANTXVR F G AND H.pdf

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1、 MIL-PRF-19500/697E 15 June 2013 SUPERSEDING MIL-PRF-19500/697D 14 January 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H This

2、specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-

3、channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects, (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.

4、5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (TO-254AA). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2(3) (4) TC= +100C ISIDM (5) TJand TSTG2N7478T1 W 208 W 2.6 C/W 0.60 V dc 30 V dc 30 V

5、 dc 20 A dc 45 A dc 45 A dc 45 A (pk) 180 C -55 to +150 (1) Derate linearly 1.67 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and device construction to 45 A. (4) See figure 3, maximum drain cu

6、rrent graph. (5) IDM= 4 X ID1; ID1as calculated by footnote (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2013. * Comments, suggestions, or questions on th

7、is document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla

8、.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/697E 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0 mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent of rated VDSMax rDS(on)

9、(1) VGS= 12 V, ID= ID2EAS TJ= +25C TJ= +150C 2N7478T1 V dc 30 V dc Min Max 2.0 4.0 A dc 10 0.0045 0.009 mJ 1250 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include

10、documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4,

11、 or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these d

12、ocuments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at

13、http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document

14、 and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

15、-MIL-PRF-19500/697E 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. F

16、IGURE 1. Dimensions and configuration, TO-254AA. Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 3 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .7

17、90 .800 20.07 20.32 4 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 4 Term 1 Drain Term 2 Source Term 3 Gate TO-254 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/697E 4 3. REQUIREMENTS 3.1 General. The individual item requirements s

18、hall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract

19、 award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IAS- Rated avalanche current, nonrepetitive nC - nano Coulomb 3.4 Interface and physical dimensions. The interface and phy

20、sical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance w

21、ith MIL-STD-750, MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percen

22、t dc testing in accordance with table I, subgroup 2 herein. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of st

23、atic charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or c

24、arriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, wheneve

25、r bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in

26、table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in suc

27、h a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/697E 5 4.1 Classification of inspections.

28、The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as spec

29、ified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III here

30、in that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced. See the

31、design safe operation area figure. End-point measurements shall be in accordance with table II. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/697E 6 4.3 Screening (JANS and JANTXV). Screening shall be in accordance with table E-IV of

32、MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1) Gate

33、 stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, single pulse avalanche energy test (see 4.3.2) Method 3470 of MIL-STD-750, single pulse avalanche energy test (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3

34、) 9 Subgroup 2 of table I herein Not applicable IDSS1,IGSSF1, IGSSR1, as a minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value

35、, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042

36、of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein, IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 =

37、 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroup 2 of table I herein, IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, which

38、ever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. 17 Method 1081 of MIL-STD-750 (see 4.3.5), Endpoints: Subgroup 2 of table I herein. Method 1081 of MIL-STD-750 (see 4.3.5), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IG

39、SSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. * (3) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. * Provided by I

40、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/697E 7 4.3.1 Gate stress test. Apply VGS= 24 V, minimum for t = 250 S, minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current IAS= ID1. b. Inductance . L = ( )212EIV VVASDBR DDBRmH minimum

41、. c. Gate to source resistor RGS. 25 RGS 200 . d. Supply voltage . VDD= 25 V dc. e. Initial case temperature . TC= +25 C, -5 C, +10 C. f. Gate voltage VGS= 12 V dc. g. Number of pulses to be applied . 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in

42、accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc.

43、b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltageAll leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source1,200V /1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up tim

44、e.500V /second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B in

45、spection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * Provided by IHSNot for ResaleNo

46、 reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/697E 8 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 SEM (scanning electron microscope). B4 1042 Intermittent operation life, co

47、ndition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reve

48、rse bias, condition A, VDS= rated; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Bond strength, test condition A. 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordanc