DLA MIL-PRF-19500 672-2001 SEMICONDUCTOR DEVICE TRANSISTOR PLASTIC NPN SILICON SWITCHING TYPE 2N2222AUE1 JAN JANTX JANJ.pdf
《DLA MIL-PRF-19500 672-2001 SEMICONDUCTOR DEVICE TRANSISTOR PLASTIC NPN SILICON SWITCHING TYPE 2N2222AUE1 JAN JANTX JANJ.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 672-2001 SEMICONDUCTOR DEVICE TRANSISTOR PLASTIC NPN SILICON SWITCHING TYPE 2N2222AUE1 JAN JANTX JANJ.pdf(20页珍藏版)》请在麦多课文档分享上搜索。
1、MIL-PRF-19500/67230 April 2001PERFORMANCE SPECIFICATIONSEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,SILICON, SWITCHING, TYPE 2N2222AUE1JAN, JANTX, JANJThis specification is approved for use by all Departmentsand Agencies of the Department of Defense.1. SCOPE1.1 Scope. This specification covers the
2、 performance requirements for plastic NPN, silicon, switchingtransistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.1.2 Physical dimensions. See figure 1, SOT-23 (similar to TO-236).1.3 Maximum ratings.Types PTTA =+25C(1) (2)IC VCBO VCEO VEBO T
3、OP and TSTG RJA2N2222AUE1mW500mA600V75V50V6C-55 to +150C/W417 (1)556 (2)(1) If the printed wiring board is made of alumina substrate; alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina:Derate linearly 2.4 mW/C for TA +25C. (See layout for RJAtest).(2) If the printed wiring board is made of FR5 substrate
4、; FR5 = 1.0 x 0.75 x 0.062 in.: Derate linearly1.8 mW/C for TA +25C.AMSC N/A FSC 5961DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.INCH-POUNDBeneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use inimproving this docu
5、ment should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal(DD Form 1426) appearing at the end of this document or by letter.Provided by IHSNot for ResaleNo reproduction or netw
6、orking permitted without license from IHS-,-,-MIL-PRF-19500/67221.4 Primary electrical characteristics at TA = +25C.hFE at VCE = 10 V dchFE8IC = 1.0 AdchFE9IC = 10 AdchFE1IC = 0. 1 mAdchFE2IC = 1.0 mAdchFE3IC = 10 mAdchFE4 (1)IC = 150 mAdchFE5 (1)IC = 500 mAdcMinMax35 40 50 75325100 10030030Types Li
7、mit |hfe| f = 100 MHzCobo Switching (saturated)VCE = 20 V dcIC = 20 mA dc100kHz f 1MHzVCB = 10 V dcIE = 0ton toff2N2222AUE1 MinMax2.4pF8ns35ns300Types Limit VCE(sat)1 (1)IC = 150 mA dcIB = 15 mA dcVCE(sat)2 (1)IC = 500 mA dcIB = 50 mA dcVBE(sat)1 (1)IC = 150 mA dcIB = 15 mA dcVBE(sat)2 (1)IC = 500 m
8、A dcIB = 50 mA dc2N2222A UE1 MinMaxV dc0.3V dc1.0V dc0.61.2V dc2.0(1) Pulsed see 4.5.1.2. APPLICABLE DOCUMENTS2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. Thissection does not include documents cited in other sections of this specificatio
9、n or recommended for additionalinformation or as examples. While every effort has been made to ensure the completeness of this list, documentusers are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of thisspecification, whether or not they are listed.Pro
10、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/6723DimensionsInches MillimetersSymbolMin Max Min MaxA .110 .123 2.8 3.1B .051 .057 1.32 1.43C .037 .046 0.95 1.15D .015 .017 0.39 0.41F .005 .007 0.125 0.175G .074 .076 1.88 1.92H .018 .024
11、0.46 0.59K 0 .004 0 0.1L .094 .103 2.4 2.6N .037 .038 0.94 0.96MP1 .035 .036 0.89 0.91MP2 .031 .032 0.79 0.81MP3 .078 .080 1.99 2.01MP4 .037 .038 0.94 0.96FIGURE 1. Physical dimensions SOT-23 (similar to TO-236).NOTES:1. All dimensions are in inches.2. Millimeters are given for general information o
12、nly.3. Terminal numbers are shown for reference.1 = Base, 2 = Emitter, 3 = CollectorProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67242.2 Government documents.2.2.1 Specifications, standards, and handbooks. The following specification
13、s, standards, and handbooks form apart of this document to the extent specified herein. Unless otherwise specified, the issues of these documents arethose listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) andsupplement there to, cited in the solicitation
14、 (see 6.2).SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-19500 - Semiconductor Devices, General Specification for.STANDARDDEPARTMENT OF DEFENSEMIL-STD-750 - Test Methods for Semiconductor Devices.(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from
15、 theDocument Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,Philadelphia, PA 19111-5094.)2.3 Non-Government publications. The following documents form a part of this document to the extent specifiedherein. Unless otherwise specified, the issues of the documen
16、ts which are DoD adopted are those listed in the issueof the DoDISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DoDISSare the issues of the documents cited in the solicitation (see 6.2).JEDEC Standard 20 - Moisture Reflow Sensitivity Classificatio
17、n for Surface Mount Devices.JESD22A -112 - ESD Testing.JESD22-A101 - Steady State Temperature Humidity Bias Life Test.JESD22-A102 - Autoclave.JESD22-A103 - High temperature storage life.JESD22-A113 - Preconditioning.(Applications for copies should be addressed to the Electronics Industries Alliance,
18、 2500 Wilson Boulevard,Arlington, VA 22201-3834.)(Non-Government standards and other publications are normally available from the organizations that prepare ordistribute the documents. These documents may also be available in or through libraries or other informationalservices.)2.4 Order of preceden
19、ce. In the event of a conflict between the text of this document and the references citedherein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable lawsand regulations unless a specific exemption has been obtained.3. REQUIREMENTS3.1 General. The requ
20、irements for acquiring the product described herein shall consist of this document andMIL-PRF-19500.3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by amanufacturer authorized by the qualifying activity for listing on the applicable qualified man
21、ufacturers list (QML)before contract award (see 4.2 and 6.3).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67253.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be asspecified in MI
22、L-PRF-19500 and as follows.FIT - Failure in time.UE1 - Unleaded encapsulated plastic over epoxy wire bonded frame (non-hermetic).3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified inMIL-PRF-19500, and figure 1 herein.3.4.1 Lead finish. Lead finish shal
23、l be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performancecharacteristics are
24、 as specified in 1.3, 1.4, and table I herein.3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein.3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except as specified herein. The part markingshall consist of an abbreviated date code
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLAMILPRF195006722001SEMICONDUCTORDEVICETRANSISTORPLASTICNPNSILICONSWITCHINGTYPE2N2222AUE1JANJANTXJANJPDF

链接地址:http://www.mydoc123.com/p-692461.html