DLA MIL-PRF-19500 663 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS N-CHANNEL SILICON TYPES 2N7431 2N7432 AND 2N7433 JANTXVR F G AND H AND JANSR F G AND H.pdf

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1、 MIL-PRF-19500/663F 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H This specification is

2、 approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhanc

3、ement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. S

4、ee figure 1, TO-254AA. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TC= +25C PTTA= +25C RJC (2)VDSVDGVGSID1 (3) (4) ID2TC= +100C (3) (4) ISIDMTJand TSTGW W C/W V dc V dc V dc A dc A dc A dc A(pk) C 2N7431 250 3.0 0.5 60 60 20 35.0 35.0 35.0 140 -55 2N7432 250 3.0 0.5 100 100

5、 20 35.0 35.0 35.0 140 to 2N7433 250 3.0 0.5 200 200 20 35.0 25.0 35.0 140 +150 (1) Derate linearly by 2.0 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires and may be limited by

6、pin diameter: (4) See figure 3, maximum drain current graph. AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDComments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semicond

7、uctordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September

8、2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/663F 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 VGS(TH)1VDS VGSID= 1.0 Max IDSS1VGS= 0 VDS= 80 Max rDS(ON) (1) VGS= 12 V dc EASat ID1IASID= 1.0 mA

9、 dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2V dc V dc A dc ohm ohm mJ A Min Max 2N7431 60 2.0 4.0 25 0.021 0.040 500 35.0 2N7432 100 2.0 4.0 25 0.045 0.105 500 35.0 2N7433 200 2.0 4.0 25 0.070 0.175 500 35.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents

10、listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list,

11、 document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handboo

12、ks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for

13、Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in

14、the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for

15、ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/663F 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5.

16、In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-254AA. Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 3 LO .150 BSC 3.81 BSC LS .150

17、BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 4 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 4 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/663F 4 3.

18、 REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the

19、applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, nonrepetitive nC nano Coulomb. 3.

20、4 Interface and physical dimensions. The Interface and physical dimensions shall be as specified in MIL-PRF-19500, figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Lead formation and f

21、inish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in acc

22、ordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.4.2 Internal construction. Multiple chip construction is not permitted in this specification. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manuf

23、acturer, marking of the country of origin may be omitted from the body of the transistor but shall be retained on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I

24、. 3.7 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.7.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are

25、 recommended (see 3.7). * a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS

26、areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.8 Electri

27、cal test requirements. The electrical test requirements shall be as specified in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/663F 5 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform

28、 in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conforma

29、nce inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior

30、revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 Single event effects (

31、SEE). SEE shall be performed at initial qualification and after process or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to

32、qualify the device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provided by IHSNot for ResaleNo reproduction or networking permitte

33、d without license from IHS-,-,-MIL-PRF-19500/663F 6 * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of

34、table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of

35、MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) 9 Subgroup 2 of table I herein IDSS1, IGSSF1, IGSSR1Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, V

36、GS(TH)1, subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 ,

37、subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is

38、greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroups 2 and 3 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 perce

39、nt of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. 17 Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. Method 1081 of MIL-STD

40、-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a;

41、 JANTXV level does not need to be repeated in screening requirements. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/663F 7 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy EA

42、S. a. Peak current (IAS) . IAS= ID1. b. Peak gate voltage (VGS) 12 V. c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case temperature (TC) +25C +10C, -5C. e. Inductance L = (2EAS/(ID1)2)*(VBR-VDD)/VBR) mH minimum. f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) 25

43、 V (50 V for 2N7433). 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, g

44、roup E, subgroup 4 herein. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltageAll leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere ra

45、ting of high voltage source1,200V /1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500V /second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be condu

46、cted in accordance with table E-V of MIL-PRF-19500 and table I herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E

47、-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/663F 8 * 4.4.2.1 Group B inspec

48、tion, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2075 See 3.4.2. B3 2077 SEM qualification may be performed anytime prior to lot formation. * B4 1042 Test condition D. The heating cycle shall be 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated, TA= +175C, t = 24 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated, TA= +175C, t = 120 hours minimum. B5 2037 Bond strength; test condition D. 4.4.2.2 Gro