DLA MIL-PRF-19500 662 F-2013 SEMICONDUCTOR DEVICE TRANSISTOR FIELD EFFECT RADIATION HARDENED P-CHANNEL SILICON TYPES 2N7422 2N7422U 2N7423 AND 2N7423U JANTXVR AND F AND JANSR AND F.pdf

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1、 MIL-PRF-19500/662F 10 December 2013 SUPERSEDING MIL-PRF-19500/662E 11 March 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F This specification is appr

2、oved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-

3、mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See

4、figure 1, (TO-254AA), and figure 2, (surface mount, TO-276AB). 1.3 Maximum ratings. Unless otherwise specified, TA= +25oC. Type (1) PT(2) TC= +25oC PTTA= +25oC RJC(3) VDSVDGVGSID1(4) (5) TC= +25oC ID2 (4) (5) TC= +100oC ISIDM (6) TJand TSTGW W C/W V dc V dc V dc A dc A dc A dc A (pk) oC 2N7422 2N742

5、3 150 150 4.0 4.0 0.83 0.83 -100 -200 -100 -200 20 20 -22.0 -14.0 -14.0 -9.0 -22.0 -14.0 -88 -56 -55 to +150 (1) Unless otherwise noted, electrical characteristics, ratings, and conditions for “U“ suffix devices (surface mount) are identical to the corresponding non-“U“ suffix devices. (2) Derate li

6、nearly by 1.2 W/C for TC +25C. (3) See figure 3, thermal impedance curves. (4) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (5) See figure 4, maximum drain current graphs. (6) IDM= 4 X ID1as calculated in note (4). AMSC N/A FSC 596

7、1 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDComments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify th

8、e currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 10 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

9、hout license from IHS-,-,-MIL-PRF-19500/662F 2 1.4 Primary electrical characteristics at TC= +25C. Type (1) Min V(BR)DSSVGS= 0 ID= -1.0 mA dc VGS(TH)1VDS VGSID= -1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent of rated VDSMax rDS(on)(2) VGS= -12V ID= ID2EAS at ID1IAS TJ= 25oC TJ= 150oC 2N7422 2N7423 V dc

10、-100 -200 V dc Min Max -2.0 -4.0 -2.0 -4.0 A dc -25 -25 0.080 0.315 0.200 0.708 mJ 500 500 A -22 -14 (1) Unless otherwise noted, electrical characteristics, ratings, and conditions for “U” suffix devices (surface mount) are identical to the corresponding non-“U“ suffix devices. (2) Pulsed (see 4.5.1

11、). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort

12、has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks

13、. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices,

14、 General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

15、 Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemptio

16、n has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/662F 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symb

17、ology. 4. All terminals are isolated from case. FIGURE 1. Physical dimensions for TO-254AA. Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3

18、.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/662F 4 Dimensions Symbol Inches Millimeters Mi

19、n Max Min Max BL .620 .630 15.75 16.00 BW .445 .455 11.30 11.56 CH .142 3.61 LH .010 .020 0.25 0.51 LL1.410 .420 10.41 10.67 LL2.152 .162 3.86 4.11 LS1.210 BSC 5.33 BSC LS2.105 BSC 2.67 BSC LW1.370 .380 9.40 9.65 LW2.135 .145 3.43 3.68 Q1.030 0.76 Q2.035 0.89 Term 1 Drain Term 2 Gate Term 3 Source N

20、OTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate, and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration of surface mount pa

21、ckage outline, TO-276AB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/662F 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furn

22、ished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols

23、, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IASRated avalanche current, nonrepetitive nC nano Coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 and 2 herein. Methods u

24、sed for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets, or ceramic walled packages. 3.4.1 Lead material and finish. Lead material shall be kovar or Alloy 52; a c

25、opper core or plated core is permitted. Surface mount terminals shall be copper tungsten. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of terminal finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal co

26、nstruction: Multiple chip construction shall not be permitted to meet the requirements of this specification. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall b

27、e retained on the initial container. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, t

28、he following handling practices are recommended (see 3.6). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use o

29、f plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is appli

30、ed drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19

31、500/662F 6 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appear

32、ance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspect

33、ion shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the

34、tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or design changes which m

35、ay affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the slash sheet. End-point measurements shall

36、be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/662F 7 * 4.3 Screening (JANS and JANTXV levels only)

37、. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measure

38、ment JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3

39、) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 , Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whicheve

40、r is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 , Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-S

41、TD-750, test condition A 13 Subgroups 2 and 3 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 perc

42、ent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroups 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is

43、 greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein.

44、 (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be repeated in screening requ

45、irements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/662F 8 4.3.1 Gate stress test. Apply VGS= -30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current, IAS= ID1 b. Inductance, L = (2*EAS/(ID1

46、)2)*(VBR-VDD)/VBR) mH minimum. c. Gate to source resistor, RGS: 25 RGS 200 . d. Supply voltage, VDD= -25 V dc, except VDD= -50 V dc for 2N7423. e. Initial case temperature, TC= +25C, -5C, +10 C. f. Gate voltage, VGS= -12 V dc. g. Number of pulses to be applied: 1 pulse minimum. 4.3.3 Thermal impedan

47、ce. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.3.4 Dielectr

48、ic withstanding voltage. a. Magnitude of test voltage.900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connection.Mechanical. e. Kilovolt-ampere rating of high voltage source1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with tabl