DLA MIL-PRF-19500 647 E-2013 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER ULTRAFAST TYPES 1N6778 AND 1N6779 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/647E 21 June 2013 SUPERSEDING MIL-PRF-19500/647D 5 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agenci

2、es of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 This specification covers the performance requirements for silicon, ultrafast, power rectifier diodes. Four levels of product assuran

3、ce are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (2 pin, isolated - TO-257). 1.3 Maximurn ratings. Types VRWM(1) ID = 10 A dc IF (1) (2) TC =+100C IFSM(1) tp= 8.3 ms RJC(1) RJA (1) TSTG and TJ1N6778 1N6779 Vdc 400 600 A dc 15 A (pk) 140 C/W 1.

4、8 C/W 40 C -65 to +150 (1) Each individual diode. (2) Derate at 300 mA/C above TC= +100C. 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics are at +25C, and for each diode. Types VF1 IF = 8 A dc VF2 IF =15 A dc IR1(see 1.3) VR = 0.8 VRWMIR2 VR = 0

5、.8 VRWM (see 1.3) TC = +100C trrCJVR = 5 V f = 1 MHz 1N6778 1N6779 V dc 1.40 V dc 1.60 A dc 10 A dc 1,000 ns 60 pF 300 AMSC N/A FSC 5961INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, o

6、r emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/ . * The documentation and process conversion measures necessary to comply with this revision shall be co

7、mpleted by 21 September 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/647E 2 SCHEMATIC Configuration Terminal Description 1 Cathode 2 Anode 1 2 FIGURE 1. Physical dimensions and configuration (2 pin, isolated) (TO-257). Provided

8、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/647E 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivale

9、nt to x symbology. FIGURE 1. Physical dimensions and configuration (2 pin, isolated) (TO-257) - Continued. Dimensions Symbol Inches Millimeters Min Max Min Max BL .410 .430 10.4 10.9 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .500 .750 12.70 19.05 LO .150 typ 3.81 typ LS .200 bsc 5.08 bsc MHD

10、.140 .150 3.56 3.81 MHO .527 .537 13.4 13.6 TL .645 .665 16.4 16.9 TT .040 .050 1.02 1.27 TW .410 .420 10.4 10.7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/647E 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this se

11、ction are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users a

12、re cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of

13、 this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750

14、 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherw

15、ise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

16、3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on th

17、e applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions s

18、hall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. Polarity and te

19、rminal configuration shall be in accordance with figure 1 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. * 3.6 Electrical test requirements. The electrical test requirements

20、shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/647E 5 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be

21、 uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c.

22、Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded

23、 to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX

24、, JANTXV, and JANS levels). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see Measur

25、ement appendix E, table E-IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 and 10 Not applicable Not applicable 11 IR1and VF1IR1and VF112 See 4.3.1, t = 240 hours See 4.3.1, t = 48 hours 13 Subgroups 2 and 3 of table I herei

26、n; VF1and IR1; IR1 100 percent of initial value or 2.5 A, whichever is greater; VF1 100 mV. Subgroup 2 of table I herein; VF1and IR1; IR1 100 percent of initial value or 2.5 A whichever is greater; VF1 100 mV. (1) Thermal impedance shall be performed any time after temperature cycling, screen 3a; JA

27、NTXV level does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. TC= +125C; VR= 0.8 of rated VRWM(see 1.3). 4.3.2 Thermal impedance The thermal impedance measurements shall be per

28、formed in accordance with method 3101 or 4081 of MIL-STD-750, using the guidelines in that method for determining IM, IH, tH, tSW, (VCand VHwhere appropriate). Measurement delay time (tMD) = 35 s max. See table II, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitt

29、ed without license from IHS-,-,-MIL-PRF-19500/647E 6 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I, herein. Electrical

30、measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (J

31、ANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 IFor IO=

32、1.25 A to 10 A; TJ= +85C minimum, for 2,000 cycles minimum. 4.4.2.2 Group B inspection, appendix E, table E-VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 IFor IO= 1.25 A to 10 A; TJ= +85C minimum, for 2,000 cycles minimum. B5 Not applicable 4.4.3 Group C inspection. Grou

33、p C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.3.1 Gro

34、up C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, 5 pounds, t = 15 seconds 3 seconds. C5 4081 RJC(maximum) = 1.8 C/W. C6 1037 IFor IO= 1.25 A to 10 A; TJ= +85C minimum, for 6,000 cycles minimum. 4.4.4 Group E inspection. Group E inspection shall be co

35、nducted in accordance with the conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps and footnotes of table III herein. 4.5 Methods of insp

36、ection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

37、,-MIL-PRF-19500/647E 7 TABLE I. Group A inspection. 1/ 2/ Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJXC/W Breakdown voltage 1N6778 1N6779 4022 IR= 10 A dc, pulsed 3/ VBR 400 600 V

38、 dc Forward voltage 4011 IF= 8 A dc, pulsed 3/ IF= 15 A dc, pulsed 3/ VF1 VF21.40 1.60 V dc V dc Reverse leakage current 4016 DC method; pulsed 3/ VR= 0.8 of VRWM (see 1.3) IR110 A dc Subgroup 3 High temperature operation: TC= +100C Reverse leakage Current 4016 DC method; pulsed 3/ VR= 0.8 of VRWM(s

39、ee 1.3) IR21.0 mA dc Low temperature operation: TA= -55C Forward voltage 4011 IF= 15 A dc, pulsed 3/ VF31.80 V dc Subgroup 4 Scope display evaluation 4/ 4023 Reverse recovery time measurements 4031 Condition B1 trr60 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or n

40、etworking permitted without license from IHS-,-,-MIL-PRF-19500/647E 8 TABLE I. Group A inspection Continued. 1/ 2/ Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroups 5 and 6 Not applicable Subgroup 7 Junction capacitance 4001 VR= 5 V dc; f = 1.0 MHz CJ300 pF 1/ For samplin

41、g plan, see MIL-PRF-19500. 2/ Each individual diode. 3/ Pulse test: Pulse width = 300 s, duty cycle 2 percent. 4/ The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 50 to 100 A/division and 50 to 100 V/division. Reverse current over the knee

42、shall be at least 500 A. Each device may exhibit a slightly rounded characteristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/647E 9 TABLE II.

43、Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-750 Sampling plan Method Conditions Subgroup 1 22 devices c = 0 Temperature cycling 1051 500 cycles Hermetic seal 1071 Fine leak Gross leak Electrical measurements See table III herein, steps 1, 2,

44、 3, 4, 5, and 6. Subgroup 2 Steady-state reverse bias 1038 Test condition A t = 1,000 hours, TC= +125C VR= 0.8 of rated VRWM (see 1.3) 22 devices c = 0 Electrical measurements See table III herein, steps 1, 2, and 6. Subgroup 4 Thermal impedance curves See MIL-PRF-19500. Subgroup 5 Barometric pressu

45、re, reduced (altitude operation) 1001 Pressure 8.0 mm 15 devices c = 0 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/647E 10 TABLE III. Groups A, B, C, and E electrical and delta measurements. 1/ 2/ 3/ 4/ Step Inspection MIL-STD-750 S

46、ymbol Limits Unit Method Conditions Min Max 1 Forward voltage 4011 IF= 15 A dc pulsed VF21.60 V dc 2 Reverse leakage current 4016 VR = 0.8 of percent VRWM(see 1.3) DC method, pulsed IR110 A dc 3 Forward voltage 4011 IF= 15 A dc pulsed VF2100 mV dc from initial reading 4 Reverse leakage current 4016

47、VR = 0.8 of percent VRWM(see 1.3) DC method, pulsed IR1100 percent of initial value or 2.5 A dc which- ever is greater. 5 Thermal impedance 3101 See 4.3.2 ZJX1.6 C/W 6 5/ Reverse recovery time 4031 See table I, subgroup 4 herein. trr60 ns 1/ The electrical measurements for table E-VIa (JANS) of MIL-

48、PRF-19500 are as follows: a. Subgroup 3, see table III herein, steps 1 and 2. b. Subgroup 4, see table III herein, steps 1, 2, 3, 4, 5, and 6. c. Subgroup 5, see table III herein, steps 1, 2, 3, 4, and 6. 2/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table III herein, steps 1, 2, 5, and 6. b. Subgroup 3, see table III herein, steps 1, 2, 3, 4, 5, and 6. c. Subgroup 6, see table III herein, steps 1 and 2. 3/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: