DLA MIL-PRF-19500 622 D-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPE 2N7368 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/622D 18 December 2013 SUPERSEDING MIL-PRF-19500/622C 25 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Depart

2、ment of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Four levels of product assurance are provided a

3、s specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO - 254). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TC= +25C VCBOVCEOVEBOIBICTJand TSTGRJC(2) W V dc V dc V dc A dc A dc C C/W 2N7368 115 80 80 7.0 4.0 10 -65 to +200 1.5 (1) See figure 2 for temperatur

4、e-power derating curve. (2) See figure 3, transient thermal impedance graph. 1.4 Primary electrical characteristics. hFE2(1) VBE(SAT)1(1) VCE(SAT)1(1) Cobo|hfe| Limit VCE= 2.0 V dc IC= 3.0 A dc IC= 5.0 A dc IB= 0.5 A dc IC= 5.0 A dc IB= 0.5 A dc VCB= 10 V dc IE= 0 f = 100 kHz to 1 MHz VCE= 10 V dc I

5、C= 0.5 A dc f = 1 MHz V dc V dc pF Min Max 30 140 1.5 1.0 500 4.0 20 (1) Pulsed (see 4.5.1). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconducto

6、rdla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 18 February 2014.

7、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are

8、 equivalent to x symbology. FIGURE 1. Dimensions and configuration (TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665

9、.685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 3 2. APPLICABLE DOCUMENTS 2.1 General. The docume

10、nts listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this l

11、ist, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and han

12、dbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE

13、STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of prece

14、dence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

15、 has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicabl

16、e qualified products list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dime

17、nsions shall be as specified in MIL-PRF-19500, and on figure 1 herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic wal

18、led packages. 3.4.1 Lead formation and finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). When lead formation is performed, as a minimum,

19、 the vendor shall perform 100 percent hermetic seal in accordance with screen 14, of MIL-PRF-19500. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 4 3.6 Electrical pe

20、rformance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconduc

21、tor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualifi

22、cation inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4 and tables I and II.). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed f

23、or qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain

24、qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 5 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 ( table E-IV), and as specified herein. The following measu

25、rements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICES1and hFE

26、2Not applicable 11 Subgroup 2 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 1 A dc, whichever is greater. hFE2= 20 percent of initial value. ICES1and hFE212 See 4.3.1 See 4.3.1 13 Subgroup 2 and 3 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 1 A

27、 dc, whichever is greater. hFE2= 20 percent of initial value. Subgroup 2 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 1 A dc, whichever is greater. hFE2= 20 percent of initial value. * 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2

28、 of table I herein. For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2 of table I herein. * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditi

29、ons. Power burn-in conditions are as follows: TJ= +175C min, VCE= 10-30 V dc, TA= +30 5C. 4.3.2 Thermal impedance (ZJXmeasurements). The ZJXmeasurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere ap

30、propriate). The ZJXlimit used in screen 3c shall comply with the thermal impedance graph on figure 3 (less than or equal to the curve value at the same tHtime) and/or shall be less than the process determined statistical maximum limit as outlined in method 3131.* 4.3.3 Dielectric withstanding voltag

31、e. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum lea

32、kage current.1.0 mA. g. Voltage ramp up time.500 V/second. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 6 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4

33、.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa and E-VIb of MIL-PRF-19500.

34、 Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB 10 V dc. B5 2037 Bond strength, test condition D. B6 3131 See 4.5.2. * 4.4.2.2 Group B inspection, ta

35、ble E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1037 VCB 10 V dc. B5 3131 See 4.5.2. B6 1032 TA= +200C. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-1950

36、0. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Conditions C2 1056 Test condition B. C2 2036 Test condition A, weight = 4.5 kg, t = 10 seconds. C6 1037 VCB 10 V dc. * * * * Provided by IHSNot for ResaleNo reproduction or networking perm

37、itted without license from IHS-,-,-MIL-PRF-19500/622D 7 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be i

38、n accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Therma

39、l resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 1.0 A dc. b. Collector to emitter voltage magnitude shall be 10 V dc. c. Reference temperature measurin

40、g point shall be the case. d. Reference point temperature shall be +25C TR +75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RJCshall be 1.5C/W. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

41、ense from IHS-,-,-MIL-PRF-19500/622D 8 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.3.2 ZJX C/W Collector - emitter breakdown voltage 3011 Bias condition D

42、; IC= 0.2 A dc; pulsed (see 4.5.1) VCEO(sus) 80 V dc Emitter - base cutoff current 3061 Bias condition D; VEB= 7 V dc IEBO 1.0 mA dc Collector - emitter cutoff current 3041 Bias condition A; VBE= 1.5 V dc; VCE= 80 V dc ICEX1 10 A dc Collector - emitter cutoff current 3041 Bias condition C; VCE= 70 V

43、 dc ICES1 10 A dc Base - emitter saturated voltage 3066 Test condition A; IC= 5 A dc; IB= 0.5 A dc; pulsed (see 4.5.1) VBE(sat)1 1.5 V dc Collector - emitter saturated voltage 3071 IC= 5 A dc; IB= 0.5 A dc; pulsed (see 4.5.1) VCE(sat)1 1.0 V dc Forward - current transfer ratio 3076 VCE= 2.0 V dc; IC

44、= 1.0 A dc; pulsed (see 4.5.1) hFE1 50 175 Forward - current transfer ratio 3076 VCE= 2.0 V dc; IC= 3.0 A dc; pulsed (see 4.5.1) hFE230 140 Subgroup 3 High - temperature operation: TA= +150C Collector to emitter cutoff current 3041 Bias condition C; VCE= 70 V dc ICES2 5.0 mA dc Low - temperature ope

45、ration: TA= -55C Forward - current transfer ratio 3076 VCE= 2.0 V dc; IC= 3.0 A dc; pulsed (see 4.5.1) hFE312 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 9 TABLE I. Group A inspection - Continued.

46、Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Switching parameters Pulse delay time See figure 4 td0.2 s Pulse rise time See figure 4 tr1.3 s Pulse storage time See figure 4 ts1.4 s Pulse fall time See figure 4 tf1.2 s Magnitude of small- signal short-circuit forw

47、ard-current transfer ratio 3306 VCE= 10 V dc; IC= 0.5 A dc; f = 1 MHz |hfe| 4.0 20 Open circuit output capacitance 3236 VCB= 10 V dc; IE= 0; f = 100 kHz to 1 MHz Cobo 500 pF Subgroup 5 Safe operating area (continuous dc) 3051 TC= +25C; t 1 s; 1 cycle; (see figure 5) Test 1 VCE= 11.5 V dc; IC= 10 A d

48、c Test 2 VCE= 45 V dc; IC= 2.5 A dc Test 3 VCE= 60 V dc; IC= 0.9 A dc Safe operating area (clamped inductive) 3053 TA= +25C; IC= 10 A dc; VCC= 11.5 V dc; (See figures 6 and 7) Clamp voltage = 80 V dc Electrical measurements See table I, subgroup 2 Subgroups 6 and 7 Not applicable 1/ For sampling plan see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/622D 10 TABLE II. Group E inspection (all quality levels) for qualification or requalificati