DLA MIL-PRF-19500 616 G-2009 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER DUAL COMMON CATHODE OR ANODE CENTER TAP ULTRAFAST TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N.pdf

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1、 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. MIL-PRF-19500/616G 17 April 2009 SUPERSEDING MIL-PRF-19500/616F 27 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER

2、, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herei

3、n shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-195

4、00. 1.2 Physical dimensions. See figure 1 (TO-254AA isolated). 1.3 Maximum ratings. (for each leg). Types VRWMIFSM(1) tp= 8.3 ms IFTC= 100C (1) (2) (3) trr (1) RJC(1) RJA(1) TSTGand TJ1N6657, 1N6657R 1N6658, 1N6658R 1N6659, 1N6659R V dc 100 150 200 A (pk) 150 A dc 15 ns 35 C/W 2.3 C/W 40 C -65 to +2

5、00 (1) Each individual diode. (2) Derate linearly at 300 mA/C from +100C to +150C. (3) Total package current is limited to 30A dc. Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or e

6、mailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil. AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

7、ense from IHS-,-,-MIL-PRF-19500/616G 2 Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .530 .550 13.46 13.97 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.3

8、2 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 SCHEMATIC 1N6657, 1N6658, 1N6659 TERM 1 = ANODE 1 TERM 2 = CATHODE TERM 3 = ANODE 2 1N6657R, 1N6658R, 1N6659R TERM 1 = CATHODE 1 TERM 2 = ANODE TERM 3 = CATHODE 2 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general inf

9、ormation only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration (TO-254AA). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/616G

10、3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort h

11、as been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks.

12、 The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices,

13、General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue

14、, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, super

15、sedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are m

16、anufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-

17、PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminal feed throughs shall employ materials that contain a minimum of 90 percent AL2O3(cer

18、amic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. The US Governments preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict betw

19、een the metric and inch-pound units, the inch-pound units shall take precedence. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/616G 4 3.4.1 Lead formation and finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-ST

20、D-750, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of MIL-PRF-19500. 3.4.2 Polarity. Pol

21、arity and terminal configuration shall be in accordance with figure 1 herein. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I

22、herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceabi

23、lity, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection s

24、hall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of ta

25、ble II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1950

26、0/616G 5 4.3 Screening ( JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not

27、 be acceptable. Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500 JANS level JANTX and JANTXV levels 1a 1b Required Required Not required Required (JANTXV only) 3a 3b (1) 3c Required Surge (see 4.3.1) Thermal impedance (see 4.3.2) Required Surge (see 4.3.1) Thermal impedance (see 4.3.2

28、) 6 Not applicable Not applicable 9 VF1and IR1Not applicable 10 Method 1038 of MIL-STD-750, test condition A; t = 48 hours; VR= 80 percent of rated VR. Not applicable 11 VF1and IR1; VF1= 0.1 V (pk); IR1= 2 A dc or 100 percent from the initial value; whichever is greater. VF1and IR112 Method 1038 of

29、MIL-STD-750, test condition B; t = 240 hours; (see 4.3.3) Method 1038 of MIL-STD-750, test condition A; t = 48 hours; VR= 80 percent of rated VR. 13 Subgroup 2 and 3 of table I herein; VF1and IR1; VF1= 0.1 V (pk); IR1= 2 A dc or 100 percent from the initial value; whichever is greater. Subgroup 2 of

30、 table I herein; VF1and IR1; VF1= 0.1 V (pk); IR1= 2 A dc or 100 percent from the initial value; whichever is greater. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Surge current. Surge current, method 4066 of M

31、IL-STD-750. IO= 0; VRM(w) = 0; IFSM= see 1.3; six surges; TA= 25C, tp= 8.3 ms, one minute minimum time between surges. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081, as applicable, of MIL-STD-750 using the guidelines in that met

32、hod for determining IM, IH, tH, tSW(VCand VHwhere appropriate). See table II, group E, subgroup 4 herein. 4.3.3 Burn-in conditions. Burn-in conditions are as follows: TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. VR= rated. Adjust IOor IFto achieve TJ=150C minimum. 4

33、.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/616G 6 4.4.1 Group A inspection. Group A inspection shall be conducted

34、in accordance with appendix E, table E-V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions of appendix E, tables E-VIa (JANS) and E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shal

35、l be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable. * 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS of MIL-PRF-19500). Subgroup Method Condition B4 1037 TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. I

36、For IO= 1.25 to 10 A. Minimum for 2,000 cycles. B5 1027 For irradiated devices, include trras an end-point measurement. * 4.4.2.2 Group B inspection, appendix E, table E-VIb (JANTX and JANTXV of MIL-PRF-19500). Subgroup Method Condition B3 1037 TA= room ambient as defined in the general requirements

37、 of 4.5 of MIL-STD-750. IFor IO= 1.25 to 10 A. Minimum for 2,000 cycles. For irradiated devices, include trras an end-point measurement. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-

38、PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable. * 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, weight = 10 pound

39、s, t = 15 seconds. C5 4081 RJC= 2.3C/W. C6 1037 TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. IFor IO= 1.25 to 10 A for 6,000 cycles. For irradiated devices, include trras an end-point measurement. 4.4.4 Group E inspection. Group E inspection shall be conducted in ac

40、cordance with the conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable. 4.5 Methods of inspection. M

41、ethods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform

42、 of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectifier current. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less than 150 degrees. Provided by IHSNot fo

43、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/616G 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJXC/W B

44、reakdown voltage 4022 IR= 500 A dc; pulsed (see 4.5.1) VBRV dc 1N6657, 1N6657R 1N6658, 1N6658R 1N6659, 1N6659R 100 150 200 Forward voltage 4011 IF= 10 A (pk); pulsed (see 4.5.1) VF11.0 V dc IF= 20 A (pk); pulsed (see 4.5.1) VF21.2 V dc Reverse current leakage 4016 DC method; VR= rated VR, (see 1.3);

45、 pulsed (see 4.5.1) IR110 A dc Subgroup 3 High temperature operation TC= +100C Reverse current leakage 4016 DC method; VR= rated VR (see 1.3); pulsed (see 4.5.1) IR21.0 mA dc Low temperature operation: TA= -65C Forward voltage 4011 IF= 10 A (pk); pulsed (see 4.5.1) VF31.15 V dc Subgroup 4 Scope disp

46、lay evaluation 2/ Reverse recovery time 4031 Condition B; IF= 1A dc, IR= 1 A, IRR= 100 mA trr35 ns Junction capacitance 4001 VR= 10 V dc, f = 1 mHz, VSIG= 50 mV (p-p) (max) CJ150 Subgroup 5 Not applicable See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permi

47、tted without license from IHS-,-,-MIL-PRF-19500/616G 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 6 Surge 4066 Mounting conditions in accordance with test method 1026 of MIL-STD-750, TA= +25C, IFSM= (see 1.3), IO= 0; VRM(w

48、) = 0; six surges; TA= 25C, tp= 8.3 ms, one minute minimum time between surges. Electrical measurements See table I, subgroup 2 herein. Subgroup 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibrat

49、ion factors of 50 to 100 A/division and 20 to 50 V/division. Reverse current over the knee shall be at least 500 A. Each device may exhibit a slightly rounded characteristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr