DLA MIL-PRF-19500 402 F-2009 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPE 2N3739 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/402F 12 August 2009 SUPERSEDING MIL-PRF-19500/402E 12 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3739, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defen

2、se. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device

3、type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-66). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) TC= +25C PT(1) TC= +100C RJCVCBOVCEOVEBOIBICTSTGand TJ2N3739 W 20 W 13 C/W 7.5 V dc 325 V dc 300 V dc 6.0 A dc 0.5 A dc 1.0 C -55 to +2

4、00 (1) For temperature-power derating curves, see figure 2. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since

5、 contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 12 November 2009. Provided b

6、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/402F 2 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00

7、mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header a

8、nd flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 8. Pin 1 is the emitter, pin 2 is the base. The collector shall be electrically connecte

9、d to the case. FIGURE 1. Physical dimensions (similar to TO-66). Dimensions Notes Ltr Inches Millimeters Min Max Min Max CD .620 15.75 CH .250 .340 6.35 8.64 HR .350 8.89 HR1 .115 .145 2.92 3.68 HT .050 .075 1.27 1.91 LD .028 .034 0.71 0.86 4, 6 LL .360 .500 9.14 12.70 L1 .050 1.27 6 MHD .142 .152 3

10、.61 3.86 4 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 3 PS1 .093 .107 2.36 2.72 3 S .570 .590 14.48 14.99 Term 1 Emitter Term 2 Base Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/402F 3 1.4 Primary electrical characteristics at

11、TA= +25C. Limit hFE1(1) hFE3(1) VBEVCE(SAT)2Cobo|hfe| Switching VCE= 10 V dc IC= 10 mA dc VCE= 10 V dc IC= 100 mA dc VCE= 10 V dc IC= 100 mA dc IC= 250 mA dc IB= 25 mA dc VCB= 100 V dc IE= 0 mA dc 100 kHzf1 MHzVCE= 10 V dc IC= 100 mA dc f = 10 MHz tontoffMin Max 30 40 200 V dc 1 V dc 2.5 pF 20 1 6 s

12、 1.5 s 3.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or

13、as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specific

14、ations, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PR

15、F-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document

16、 Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing i

17、n this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specificati

18、on shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shal

19、l be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/402F 4 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead fini

20、sh. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical characte

21、ristics are as specified in 1.3, 1.4 and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be u

22、niform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Co

23、nformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualifi

24、cation was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or

25、networking permitted without license from IHS-,-,-MIL-PRF-19500/402F 5 * 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that

26、exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500 Measurement JANTX and JANTXV levels only (1) 3c Thermal impedance (see 4.3.2) 9 Not applicable 11 hFE2and ICBO1 12 See 4.3.1 13 Subgroup 2 of table I herein, ICBO1= 100 percent of initial value or 1

27、A dc, whichever is greater hFE2= 20 percent of initial value (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: 2N3739 - VCB= 10 - 30 V dc, TJ= +162.

28、5C 12.5C 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgro

29、up 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein

30、. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV), of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

31、Subgroup Method Conditions B3 1037 1026 For solder die attach: VCB 10 V dc, 2,000 cycles. TA +35C. For eutectic die attach: VCB= 10 V dc, TA +35C adjust PTto achieve TJ= +150C min. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/402F 6

32、* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method

33、Conditions C2 2036 Test condition A, weight = 10 lbs, T = 15 seconds. C5 3131 Thermal resistance, see 4.3.2, RJC(max)= 7.5C/W. C6 1037 1026 For solder die attach: VCB 10 V dc, 6,000 cycles. TA +35C. For eutectic die attach: VCB= 10 V dc, TA +35C adjust PTto achieve TJ= +150C min. * 4.4.4 Group E ins

34、pection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection.

35、Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PR

36、F-19500/402F 7 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector to emitter 3011 Bias condition D, IC= 5.0 mA dc V(

37、BR)CEO300 V dc Collector to base cutoff current 3036 Bias condition D, VCB= 325 V dc ICBO110 A dc Collector to emitter cutoff current 3041 Bias condition A, VCE= 300 V dc, VBE= 1.5 V dcICEX20 A dc Emitter to base cutoff current 3061 Bias condition D, VEB= 6.0 V dc IEBO0.1 mA dc Base to emitter, non-

38、saturated voltage 3066 Test condition B, VCE= 10 V dc, IC= 100 mA dc; pulsed (see 4.5.1)VBE1 V dc Collector to emitter voltage (saturated) 3071 IC= 100 mA dc; IB= 10 mA dc; pulsed (see 4.5.1) VCE(sat)10.75 V dc Collector to emitter voltage (saturated) 3071 IC= 250 mA dc; IB= 25 mA dc; pulsed (see 4.

39、5.1) VCE(sat)22.5 V dc Forward-current transfer ratio 3076 VCE= 10 V dc; IC= 10 mA dc; pulsed (see 4.5.1) hFE130 Forward-current transfer ratio 3076 VCE= 10 V dc; IC= 50 mA dc; pulsed (see 4.5.1) hFE230 Forward-current transfer ratio 3076 VCE= 10 V dc; IC= 100 mA dc; pulsed (see 4.5.1) hFE340 200 Fo

40、rward-current transfer ratio 3076 VCE= 10 V dc; IC= 250 mA dc; pulsed (see 4.5.1) hFE425 Forward-current transfer ratio 3076 VCE= 10 V dc; IC= 500 mA dc; pulsed (see 4.5.1) hFE510 See footnotes at end of table. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license

41、from IHS-,-,-MIL-PRF-19500/402F 8 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High-temperature operation: TA= +150C Collector to base cutoff current 3036 Bias condition D, VCB= 325 V dc ICBO2 150 A dc Low-temperature op

42、eration: TA= -55C Forward-current transfer ratio 3076 VCE= 10 V dc; IC= 100 mA dc;pulsed (see 4.5.1) hFE6 15 Subgroup 4 Pulse response: Turn-on time VCC= 150 V dc; IC= 500 mA dc; IB= 50 mA dc (see figure 3) ton1.5 s Turn-off time VCC= 150 V dc; IC= 500 mA dc; IB1= IB2= 50 mA dc (see figure 3)toff3.5

43、 s Magnitude of common emitter, small-signal short-circuit forward- current transfer ratio 3306 VCE= 10 V dc; IC= 100 mA dc; f = 10 MHz |hFE| 1.0 6 Small-signal short-circuit forward-current transfer ratio 3206 VCE= 20 V dc; IC= 100 mA dc f = 1 kHz hfe35 300 Open circuit output capacitance 3236 VCB=

44、 100 V dc; IE= 0 mA dc; 100 kHz f 1 MHz Cobo20 pF Subgroup 5 Safe operating area (continuous dc) 3051 TC= +25C; t = 1 s; 1 cycle; (see figure 4) Test 1 VCE= 80 V dc; IC= 250 mA dc Test 2 VCE= 290 V dc; IC= 6 mA dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or network

45、ing permitted without license from IHS-,-,-MIL-PRF-19500/402F 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 - Continued Safe operating area (switching) 3053 Load condition C (unclamped inductive load) (see figure 5) TA=

46、 +25C; duty cycle 10 percent; Rs= 1; tr= tf 500 ns Test 1 tpapprox 8 ms (vary to obtain IC); RBB1= 100; VBB1 10 V dc; RBB2= ; VBB2= 0 V dc; VCC 100 V dc; IC= 500 mA dc; the coil used shall provide a minimum inductance of 3.5 mH at 500 mA with max. dc resistance of 0.5 ohm (for reference only: Acme T

47、58220, or equivalent) Test 2 tpapprox 8 ms (vary to obtain IC); RBB1= 100; VBB1 10 V dc; RBB2= ; VBB2= 0 V dc; VCC 100 V dc; IC= 100 mA dc; the coil used shall provide a minimum inductance of 25 mH at 100 mA with max. dc resistance of 1.0 ohm (for reference only: Triad C-48u, centertapped, or equiva

48、lent.) Safe operating area (switching) TA= +25C; duty cycle 10 percent; tpapprox 8 ms (vary to obtain IC); VCC 100 V dc; IC= 1 A dc; Rs= 1; clamp voltage = 300 V dc (see figure 6) Electrical measurements See table I, subgroup 2 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 3, 4, and 5 (JANS). Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group C, subgroup 2 and 6. Group E, subgroup 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,