DLA DSCC-VID-V62 11606 REV A-2011 MICROCIRCUIT DIGITAL PLL FREQUENCY SYNTHESIZER MONOLITHIC SILICON.pdf
《DLA DSCC-VID-V62 11606 REV A-2011 MICROCIRCUIT DIGITAL PLL FREQUENCY SYNTHESIZER MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA DSCC-VID-V62 11606 REV A-2011 MICROCIRCUIT DIGITAL PLL FREQUENCY SYNTHESIZER MONOLITHIC SILICON.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONSLTR DESCRIPTION DATE APPROVEDPrepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Phu H. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 Original date of drawing YY MM DD CHECKED BY Ph
2、u H. Nguyen TITLE MICROCIRCUIT, DIGITAL, PLL FREQUENCY SYNTHESIZER, MONOLITHIC SILICON 11-01-19 APPROVED BY Thomas M. Hess SIZE A CODE IDENT. NO. 16236 DWG NO. V62/11606 REV PAGE 1 OF 11 AMSC N/A 5962-V027-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
3、HS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/11606 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance PLL frequency synthesizer microcircuit, with an operating temperature range of -55C to +125C. 1.2 Vendor Item
4、 Drawing Administrative Control Number. The manufacturer,s PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/11606 - 01 X B Drawing Device type Case outline Lead finish number (See 1.
5、2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 ADF4106-EP PLL frequency synthesizer 1.2.2 Case outline(s). The case outlines are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 16 JEDEC MO-153 Lead Thin Shrink Small Outline
6、Package Y 20 JEDEC MO-220 Lead Lead Frame Chip Scale Package 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer: Finish designator Material A Hot solder dip B Tin-lead plateC Gold plateD PalladiumE Gold flash palladium Z Other
7、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/11606 REV PAGE 3 1.3 Absolute maximum ratings. 1/ Voltage referenced : AVDDto GND 2/ . -0.3 V to +7.0 V AVDDto DVDD. -0.3 V t
8、o +0.3 V VPto GND -0.3 V to +5.8 V VPto AVDD-0.3 V to +5.8 V Digital I/O voltage to GND . -0.3 V to VDD+ 0.3 V Analog I/O voltage to GND -0.3 V to VP+ 0.3 V REFIN, RFINA, REFINB to GND -0.3 V to VDD + 0.3 V Ambient operating temperature range . -55C to +125C Storage temperature range . -65C to +150C
9、 Maximum junction temperature (TJ) 150C Thermal impedance,( JA): Case outline X 112C /W Case outline Y (Paddle soldered) 30.4C /W Reflow soldering: Peak temperature 260C Time at peak temperature 40 sec Transistor count: CMOS 6425 Bipolar 303 2. APPLICABLE DOCUMENTS JEDEC PUB 95 Registered and Standa
10、rd Outlines for Semiconductor Devices (Applications for copies should be addressed to the Electronic Industries Alliance, 3103 North 10thSt., Suite 240-S, Arlington, VA 22201-2107or online at http:/www.jedec.org) 3. REQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the man
11、ufacturers part number as shown in 6.3 herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with the manufacturers part number and with items A and C (if applicable) above. 3.3 El
12、ectrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 1/ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
13、only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2/ GND = AGND = DGND = 0 V. Provided by IHSN
14、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/11606 REV PAGE 4 3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein.
15、 3.5 Diagrams. 3.5.1 Case outline. The case outline shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2. 3.5.3 Functional block diagram. The functional block diagram shall be as shown in figure 3. 3.5.4 Timing diagrams. The timi
16、ng diagrams shall be as shown in figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/11606 REV PAGE 5 TABLE I. Electrical performance characteristics. 1/ Test Symbol T
17、est conditions 2/ unless otherwise specified Limits Unit Min Max RF characteristics RF Input frequency RFINFor lower frequency, ensure slew rate (SR) 320/s 0.5 6.0 GHz RF input sensitivity -10 0 dBm Maximum allowable prescaler output frequency 3/ P = 8 300 MHz P = 10 325 MHz REFINcharacteristics REF
18、INinput frequency For f 50 V/s 20 300 MHz REFINinput sensitivity 4/ Biased at AVDD/240.8 VDDVp-p REFINinput capacitance 10 pF REFINinput current 100 A Phase detector Phase detector frequency 6/ ABP = 0, 0 (2.9 ns antibacklash pulse width) 104 MHz Charge pump Sink/Source High value Low value Absolute
19、 accuracy RSETrange ICPWith RSET= 5.1 k 5 TYP mA 625 TYP A With RSET= 5.1 k 2.5 TY % 3.0 11 k Three stage leakage ICP1 nA typical; TA= 25C 2 nA Sink and source current matching 0.5 VCP VP 0.5 V 2 TYP % ICPvs VCP VCP VP 0.5 V 1.5 TYP % ICPvs temperature VCP= VP/2 2 TYPLogic inputs Input high voltage
20、VIH1.4 V Input low voltage VIL0.6 Input current IINH, IINL1 A Input capacitance CIN10 pF Logic outputs Output high voltage VOHOpen-drain output chosen, 1 k pull up resistor to 1.8 V CMOS output chosen 1.4 V VDD 0.4 Output high current IOH100 A Output low voltage VOLIOL= 500 A 0.4 V Power supplies AV
21、DD2.7 3.3DVDDAVDDV VPAVDD VP 5.5 V AVDD5.5 V IDD(AIDD+DIDD) 7/ 9.0 mA TYP 11 mA IDD(AIDD+DIDD) 8 9.5 T 11.5IDD(AIDD+DIDD) 9/ 10.5 mA TYP 13 IPTA= 25C 0.4Power down mode (AIDD+ DIDD) 10/ 10 TYP A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted witho
22、ut license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/11606 REV PAGE 6 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 2/ unless otherwise specified Limits Unit Min Max Noise characteristics Normalized phase nois
23、e floor (PNSYNTH) 11/ PLL loop BW = 500 kHz -223 TYP dBc/Hz Normalized 1/f Noise (PN1_f) 12/ Measured at 10 kHz offset, normalized to 1 GHz VCO output -122 TYP Phase noise performance 13/ 900 MHz 14/ 5800 MHz 15/ 5800 MHz 16/ dBc 1 kHz offset and 200 kHz PFD frequency -92.5 TYP 1 kHz offset and 200
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLADSCCVIDV6211606REVA2011MICROCIRCUITDIGITALPLLFREQUENCYSYNTHESIZERMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-689320.html