DLA SMD-5962-98652 REV F-2010 MICROCIRCUIT LINEAR LINE RECEIVER DIFFERENTIAL QUAD LVDS LOW VOLTAGE MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added test circuit to Figure 2. lgt 00-07-21 Raymond Monnin B Add device type 02. Add package Y. Add radiation features. Editorial changes throughout. - drw 01-06-29 Raymond Monnin C Add device type 03. - drw 01-08-29 Raymond Monnin D Add device

2、types 04 and 05. Add appendix A. Editorial changes throughout. drw 04-08-25 Raymond Monnin E For paragraph 1.5, clarify radiation features for device types 02, 03, 04, and 05. - drw 09-04-10 Joseph D. Rodenbeck F Add device type 06. Add radiation features for device type 06, paragraph 1.5. - drw 10-

3、04-21 Charles F. Saffle REV SHET REV F F F F F F F SHEET 15 16 17 18 19 20 21 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin COLUMBUS,

4、OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, LINE RECEIVER, DIFFERENTIAL, QUAD, LVDS, LOW VOLTAGE,AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-04-19 MONOLITHIC SILICON AMSC N/A REVIS

5、ION LEVEL F SIZE A CAGE CODE 67268 5962-98652 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E291-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 RE

6、VISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in th

7、e Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 98652 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device cla

8、ss designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-

9、PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 DS90LV032A Quad differential line receiv

10、er, LVDS 02 UT54LVDS032LV Radiation hardened, (dose rate 1 rad(Si)/s), quad differential line receiver, LVDS 03 UT54LVDS032LV Radiation hardened, (dose rate 5 rad(Si)/s), quad differential line receiver, LVDS 04 UT54LVDS032LVE Radiation hardened, (dose rate 1 rad(Si)/s), quad differential line recei

11、ver, LVDS, with enhanced AC parameters 05 UT54LVDS032LVE Radiation hardened, (dose rate 5 rad(Si)/s), quad differential line receiver, LVDS, with enhanced AC parameters 06 LVDS032 Radiation hardened, (dose rate 50 to 300 rad(Si)/s), quad differential line receiver, LVDS 1.2.3 Device class designator

12、. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendi

13、x A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style F GDFP2-F16 or CDFP3-T16 16 Flat pack X GDFP1-G16 16 Flat pack with gull-wing leads Y CDFP4-F

14、16 16 Flat pack Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish

15、 is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) -0.3 V to +4 V Input voltage (RIN+, RIN-) -0.3 V to +3.9 V 2/ Enable input voltage (EN, EN) . -0.3 V to (VCC+ 0.3 V) Output voltage (ROU

16、T) . -0.3 V to (VCC+ 0.3 V) Storage temperature range -65C to +150C Lead temperature (soldering, 4 seconds) . +260C Package power dissipation at TA= +25C (PD): 3/ Case outline F 845 mW Case outline X 845 mW Case outline Y 1250 mW Thermal resistance, junction-to-ambient (JA) Case outline F 148C/W Cas

17、e outline X 148C/W Case outline Y 120C/W Thermal resistance, junction-to-case (JC) Case outline F 21C/W Case outline X 21C/W Case outline Y 20C/W Junction temperature (TJ) . +150C 4/ 1.4 Recommended operating conditions. Operating temperature range (TA): Device type 01 -55C to +85C Device types 02,

18、03, 04, 05, and 06 . -55C to +125C Operating voltage range (VCC): Device type 01 3.15 V to 3.45 V Device types 02, 03, 04, 05, and 06 . 3.0 V to 3.6 V Receiver input voltage GND to 3.0 V 1.5 Radiation features. Maximum total dose available: Device types 02 and 04 (dose rate 1 rad(Si)/s) 1 Mrads(Si)

19、Device types 03 and 05 (dose rate 5 rad(Si)/s) 100 Krads(Si) Device types 06 (dose rate 50 to 300 rad(Si)/s) . 100 Krads(Si) Neutron irradiation (device types 02, 03, 04, and 05) . 1 X 1013neutrons/cm25/ Latchup (device types 02, 03, 04, and 05) . 100 Mev-cm2/mg 2. APPLICABLE DOCUMENTS 2.1 Governmen

20、t specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION

21、MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For device types 02, 03, 04, 05, and 06,

22、maximum voltage on any pin during cold spare (VDD= VSS) 0.3 V to 4.3 V. 3/ Derate 6.8 mW/C above TA= +25C. 4/ For device types 02, 03, 04, 05, and 06, the maximum junction temperature may be increased to +175C during burn-in and life test. 5/ Guaranteed, but not tested.Provided by IHSNot for ResaleN

23、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits

24、. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or

25、from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, howe

26、ver, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacture

27、rs Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1

28、 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A

29、 and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufac

30、turer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradia

31、tion parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Mar

32、king. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA

33、 product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device

34、 classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manu

35、facturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted

36、to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot

37、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Device

38、type 01 conditions: -55C TA+85C VCC= 3.15 V to 3.45 V Device types 02, 03, 04, 05, and 06 conditions: -55C TA+125C 1/ VCC= 3.0 V to 3.6 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Differential input low threshold VTLVCM= +1.2 V 2/ 1, 2, 3 All -100 mV Differential i

39、nput high threshold VTHVCM= +1.2 V 2/ 1, 2, 3 All 100 mV Input clamp voltage VCLICL= 18 mA 1, 2, 3 01 -1.5 V 02, 03, 04, 05, 06 -1.5 Common mode voltage range VCMR VID= 200 mV peak to peak 2/, 3/, 8/ 1, 2, 3 All 0.1 2.3 V Input current IINVCC= 3.45 V or 0 V, VIN= 2.8 V or 0 V 1, 2, 3 01 10 A VCC= 0

40、V, VIN= 3.45 V 20 VCC= 3.6 V, VIN= 2.4 V receiver inputs 02, 03, 04, 05, 06 15 VCC= 0 V, VIN= 3.6 V, all inputs 20 Output high voltage VOHIOH= -0.4 mA, VID= 200 mV 1, 2, 3 01 2.7 V IOH= -0.4 mA, inputs open 2.7 IOH= -0.4 mA, VCC= 3.0 V 02, 03, 04, 05, 06 2.7 Output low voltage VOLIOL= 2 mA, VID= -20

41、0 mV 1, 2, 3 01 0.25 V IOL= 2 mA, VCC= 3.0 V 02, 03, 04, 05, 06 0.25 Output short circuit current IOSEnabled, VOUT= 0 V 4/ 1, 2, 3 01 -15 -120 mA 02, 03, 04, 05, 06 -15 -130 Output TRI-STATE current IOZDisabled, VOUT= 0 V or VCC1, 2, 3 All 10 A Input high voltage VIH5/ 1, 2, 3 All 2.0 VCCV Input low

42、 voltage VIL5/ 1, 2, 3 All GND 0.8 V Functional test FT See 4.4.1c 7, 8 All See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4

43、3218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Device type 01 conditions: -55C TA+85C VCC= 3.15 V, 3.30 V, 3.45 V CL= 20 pF Device types 02, 03, 04, 05 and 06 conditions: -55C TA+125C 1/ VCC= 3.0 V to 3.6 V, CL= 10 pF

44、 Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input current IIVIN= VCCor 0 V, other input = VCCor GND 1, 2, 3 01 10 A VIN= 3.6 V, VCC= 3.6 V, Enable pins 02, 03, 04, 05, 06 10 Supply current, no load, receivers enabled ICCEN, EN = VCCor GND, inputs open 1, 2, 3 All 15

45、 mA EN, EN = 2.4 V or 0.5V, inputs open 01 15 Supply current, no load, receivers disabled ICCZEN = GND, EN = VCC, inputs open 1, 2, 3 01 5 mA 02, 03, 04, 05, 06 4 Propagation delay, differential, high to low tPHLDVID= 200 mV, input pulse =1.1 V to 1.3 V, VIN= 1.2 V 9, 10, 11 01 0.5 3.5 ns (0 V diffe

46、rential) to VOUT= VCC, see figure 2 02, 03, 06 1.0 4.0 04, 05 1.0 1.9 Propagation delay, differential, low to high tPLHDVID= 200 mV, input pulse =1.1 V to 1.3 V, VIN= 1.2 V 9, 10, 11 01 0.5 3.5 ns (0 V differential) to VOUT= VCC, see figure 2 02, 03, 06 1.0 4.0 04, 05 1.0 1.9 Differential skew tSKDV

47、ID= 200 mV 9, 10, 11 01 1.5 ns |tPHLD- tPLHD| 02, 03, 06 0.35 04, 05 0.21 Channel to channel skew tSK1VID= 200 mV 6/ 9, 10, 11 01 1.75 ns 02, 03, 06 0.5 04, 05 0.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDAR

48、D MICROCIRCUIT DRAWING SIZE A 5962-98652 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Device type 01 conditions: -55C TA+85C VCC= 3.15 V, 3.30 V, 3.45 V CL= 20 pF Device types 02, 03, 04, 05, and 06 conditions: -55C TA+125C 1/ VCC= 3.0 V to 3.6 V, CL= 10 pF Group A subgroups Device type Limits Unit unless otherwise specified Min Max Chip