DLA SMD-5962-98539-2000 MICROCIRCUIT LINEAR RADIATION HARDENED SINGLE HIGH SPEED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《微型电路 线型 辐射加固 单路高速 运算放大器 单块硅》.pdf

《DLA SMD-5962-98539-2000 MICROCIRCUIT LINEAR RADIATION HARDENED SINGLE HIGH SPEED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《微型电路 线型 辐射加固 单路高速 运算放大器 单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-98539-2000 MICROCIRCUIT LINEAR RADIATION HARDENED SINGLE HIGH SPEED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《微型电路 线型 辐射加固 单路高速 运算放大器 单块硅》.pdf（15页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV STATUS REV OF SHEETS SHEET 12 3 4 5 6 7 8 9 1011 1213 14 PMlC NIA PREPAREDBY L.G. Traylor DEFENSE SUPPLY CENTER COLUMBUS STANDARD CHECKED BY COLUMBUS, OHIO 43216 MICROCIRCUIT DRAWING Rajesh Pithadia APPROVED BY THIS DRAWING IS AVAILABLE Raymond

2、FOR USE BY ALL DEPARTMENTS HARDENED, SINGLE, HIGH SPEED, AND AGENCIES OF THE DEPARTMENT OF DEFENSE MICROCIRCUIT, LINEAR, RADIATION DRAWING APPROVAL DATE OPERATIONAL AMPLIFIER MONOLITHIC SILICON 00-05-26 AMSC NIA REVISION LEVEL 5962-98539 DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for p

3、ublic release; distribution is unlimited. 5962-E282-00 Licensed by Information Handling Services1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and

4、lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN is as shown in the following example: 1 Y 5962 98539 I I I I I I II Federal RHA Device Device Case Lea

5、d stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA d

6、esignator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpe(s). The device type(s) identify the circuit function as follows: Device tvpe Generic numbe

7、r Circuit function o1 LM1 18 Radiation hardened high speed, single, operational amplifier 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class 11 Device requirements documentation M Vendor self-certification to

8、the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive

9、desimator Terminals Packacle stvle G MACY 1 -X8 8 P GDlPl-T8 or CDIP2-T8 8 Z GDFPl -G1 O 10 Can Dual-in-line Flat pack with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. - 11 Non RHA dev

10、ices are covered by MIL-M-3851 Oll 01. STANDARD MICROCIRCUIT DRAWING IA I I 5962-98539 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET 7 APR 97 Licensed by Information Handling Services1.3 Absolute maximum ratinas. I/ Positive supply voltage (+Vcc) +20.0 V Negative sup

11、ply voltage (-Vcc) . -20.0 V Differential input current fl O mA 21 Input voltage (VIN) . f15 V 31 Power dissipation (PD): 41 Case G . 750 mW at TA = +25“C Case P . 1 O00 mW at TA = +25“C Case Z 600 mW at TA = +25“C Output short circuit duration Continuous Storage temperature range -65C I TA I +150C

12、Junction temperature (TJ) . +175“C Lead temperature (soldering, 1 O seconds) +3OO0C Thermal resistance, junction-to-case (eJC): Case G . 48“CMl Case P . 17“CMl Case Z 22“CMl Thermal resistance, junction-to-ambient ()JA): Case G . 16O“CMl (still air at 0.5 W) Case P . 120“CMl Case Z 198“CMl 86“C/W (5

13、00 linear feet per minute air flow at 0.5 W) 66“C/W (500 linear feet per minute air flow at 0.5 W) 124“CMl (500 linear feet per minute air flow at 0.5 W) 1.4 Recommended operatina conditions. Supply voltage (fVcc) f20 V Ambient operating temperature range (TA) . -55C I TA I +125“C 1.5 Radiation feat

14、ures. s/ Maximum total dose available (dose rate = 50 - 300 rads (Si) / s) . 30 Krads - 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. differential input voltage in exces

15、s of 1 V is applied between the inputs unless some limiting resistance is used. - 2/ The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a - 3/ For supply voltages less than f15 V, the absolute maximum input voltage is equal to the su

16、pply voltage. - 4/ The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ maximum, eJA maximum, and TA. The maximum allowable power dissipation at any temperature is PD max = (TJ max - TA) / or the number given in the absolute maximum ratings, whichever is lower

17、. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1 O1 9, condition A. - 5/ These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. STANDARD MICROCIRCUIT DRAWING IA I I

18、 5962-98539 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET R DSCC FORM 2234 APR 97 Licensed by Information Handling Services2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a par

19、t of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE

20、 MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE

21、MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs). MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, P

22、A 191 11 -5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtaine

23、d. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form,

24、fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Desian, construction, and phvsical dimensions. The design, construction, and physical dimensi

25、ons shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlinefs). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified

26、 on figure 1. 3.2.3 Radiation test circuit. The radiation test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post irradiation param

27、eter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be

28、the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. STANDARD MICROCIRCUIT DRAWING IA I I 5962-98539 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET A DSCC FORM 2234 APR 97 Licensed by Information Handling Services3.5 Mar

29、king. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “596

30、2-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The cer

31、tification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required fr

32、om a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificat

33、e of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and

34、herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chanae for device class M. F

35、or device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain t

36、he option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.1 O Microcircuit aroup assianment for device class M. Device class M devices covered by this drawing shall be in microcircuit

37、group number 49 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING IA I I 5962-98539 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTest Input offset voltage Input offset current 41 Input bia

38、s current 41 See footnotes at end of table. Symbol VI0 ho +IIB TABLE I. Electrical performance characteristics. Device type o1 o1 o1 Limits Min Max -4.0 +4.0 -6.0 +6.0 -4.0 +4.0 -6.0 +6.0 -4.0 +4.0 -6.0 +6.0 -4.0 +4.0 -6.0 +6.0 -40 +40 -80 +80 -40 +40 -80 +80 -40 +40 -80 +80 -40 +40 -80 +80 1 250 1

39、400 1 250 1 400 1 250 1 400 1 250 1 400 Unit mV nA nA STAN MlCROClRCl IARD IT DRAWING IA I I 5962-98539 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 I REVISION LEVEL I SHEET G DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTABLE I. Electrical performance characteristics

40、- Continued. Conditions 11 21 31 unless otherwise specified -55C I TA I +125“C Group A subgroups Device type Limits Unit Test Symbol Input bias current 41 -1IB o1 nA +vcc = 5 v, -vcc = -35 v, VCM = 15 V, Rs = 100 ka F 400 l3 +vcc = 5 v, -vcc = -5 v, Vc=OV,Rs=l00ka Power supply rejection ratio +vcc =

41、 1 o v, -vcc = -20 v o1 +PSRR T -150 -150 +vcc = 20 v, -vcc = -1 o v v 5 -50 Common mode rejection ratio vcc = f35 v to f5 v, CMRR dB o1 o1 VI0 (ADJ)+ Adjustment for input offset voltage mV VI0 (ADJ)- AVIO 1 AT +25“C I TA I +125“C l2 Temperature coefficient 51 input offset voltage o1 o1 pV1“C pN“C +

42、 -1 O00 -55C I TA I +25“C l3 Ah0 1 AT Temperature coefficient 51 input offset current +25“C I TA I +125“C See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 IA I I 5962-98539 I REVISION LEVEL I SHEET 7 DSCC FORM 2234 APR 97 Licensed

43、 by Information Handling ServicesTABLE I. Electrical performance characteristics - Continued. Symbol +los -los kc +VOP -VOP +AVS -AVS AVS NI(BB) NI(PC) Conditions 11 21 31 -55C I TA I +125“C Group A unless otherwise specified subgroups VCC = 15 V, -VCC = -15 V, 1,2,3 tI25ms,VCM=-15V VCC = 15 V, -VCC

44、 = -15 V, 12 tI25ms,Vc=15V 3 +Vcc = 15 V, 1 -vcc = -15 v 2 3 VcM = -20 V, RL= 10 ka 456 VcM = -20 V, RL = 2 ka vCM=2ov,RL=lOkfi VCM=20V, R=2ka VOUT= 15V, RL= ka 4 5,6 VOUT= 15V, RL= 10 ka 4 5,6 VOUT=-V,RL= 4 5,6 VouT= -15 V, RL= 10 ka 4 5,6 fVcc = f5 V, RL = 2 ka, 456 VOUT = f2 v VCC = f5 V, RL = 10

45、 ka, VOUT = f2 v BW = 10 HZ to 5 kHz, 4 RS = O a, TA = +25“C 3W = 10 HZ to 5 kHz, 4 RS = 20 ka, TA = +25“C Device type o1 o1 o1 o1 Test Output short circuit current - Power supply current Output voltage swing - Open loop voltage 51 gain - Open loop voltage gain 51 Noise input broadband Noise input p

46、opcorn See footnotes at end of table. STANDARD SIZE MICROCIRCUIT DRAWING A 5962-98539 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 o1 o1 o1 Limits t 9 17 16 -1 7 -1 6 50 32 50 32 50 32 50 32 -r I Unit mA mA V Vlm V Vlm V pVrms PVPk Licensed b

47、y Information Handling ServicesTest Transient response: rise time Transient response: overshoot Slew rate Settling time Il TABLE I. Electrical performance characteristics - Continued. Conditions 11 21 31 unless otherwise specified Symbol -55C I TA I +125”C TR(tr) VIN = 50 mV, PRR = 1 kHz TR(os) VIN

48、= 50 mV, PRR = 1 kHz +SR AV = 1, VIN = -5 v to +5 v -SR AV=l,VIN=+5VtO-5V I Group A subgroups 7, 8A, 8B 7, 8A, 8B 7, 8B 8A 7, 8B 8A 9 10,ll 9 10,ll Device Li type Min o1 o1 o1 50 40 50 40 o1 lits M ax 40 50 800 1200 800 1200 Unit ns % V1p.s ns - 11 Unless otherwise specified, fVcc = f20 V and VCM =

49、O V. - 21 Devices supplied to this drawing have been characterized through all levels M, D, P of irradiation. However, this device is only tested at the “P” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25”C. - 31 These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, me