DLA SMD-5962-98533 REV E-2013 MICROCIRCUIT LINEAR RADIATION HARDENED VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add appendix A. - rrp 98-06-09 R. MONNIN B Drawing updated to reflect current requirements. - rrp 05-03-14 R. MONNIN C Add dose rate footnote under paragraph 1.5 and Table I. Delete Accelerated aging, Neutron and Dose rate induced latchup tests.

2、- ro 05-12-05 R. MONNIN D Under paragraph 1.5, delete dose rate latch up and substitute Single event latch up limit. Delete paragraph 4.4.4.2 Dose rate burnout. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro 10-11-09 C. SAFFLE E Add device type 02 and figure A-2. Make chan

3、ge to paragraph 3.2.4 and delete table III. Make changes to footnote 3/ and add footnotes 4/ and 5/ as specified under paragraph 1.5. Make changes to footnotes 1/ and 2/ as specified table I. Add paragraph A.1.5. Delete device class M references. - ro 13-07-30 C. SAFFLE REV SHEET REV E E E E E E E S

4、HEET 15 16 17 18 19 20 21 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE

5、 BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, RADIATION HARDENED, VERY LOW NOISE QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 98-01-06 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268

6、 5962-98533 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E002-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 9

7、7 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available,

8、 a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 98533 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish

9、(see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circ

10、uit function as follows: Device type Generic number Circuit function 01 HS-OP470ARH Radiation hardened , dielectrically isolated, very low noise, quad, operational amplifier 02 HS-OP470AEH Radiation hardened, dielectrically isolated, very low noise, quad, operational amplifier 1.2.3 Device class des

11、ignator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follo

12、ws: Outline letter Descriptive designator Terminals Package style X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC

13、IRCUIT DRAWING SIZE A 5962-98533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between V+ and V- . 40 V Differential input voltage 7 V Voltage at either input terminal +VSto -VSPeak output current . Indefinite

14、(one amplifier shorted to GND) Junction temperature (TJ) +175C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +275C Thermal resistance, junction-to-case (JC) 30C/W Thermal resistance, junction-to-ambient (JA) . 116C/W 1.4 Recommended operating conditions. Supply vol

15、tage range . 5 V to 15 V Input low voltage range . 0 V to +0.8 V Common-mode input voltage (VCMIN) . 1/2 (V+ - V-) Load resistance (RL) . 2 k Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01

16、. 100 krads(Si) 2/ Device type 02 . 100 krads(Si) 3/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 . 50 krads(Si) 3/ Single event latch up (SEL) . No latch up 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at

17、the maximum levels may degrade performance and affect reliability. 2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MI

18、L-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si). 3/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D t

19、o a maximum total dose of 50 krads(Si). 4/ Devices use dielectrically isolated (DI) technology and latch up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98533 DLA LAND AND MARIT

20、IME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, t

21、he issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface

22、Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order D

23、esk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regul

24、ations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modi

25、fication in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

26、 specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Timing diagrams. The timing diagrams shall be as specified o

27、n figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation

28、parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall

29、 be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R

30、EVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIOVCM= 0 V 3/ 1, 3 01, 02 -2.1 2.1 mV 2 -2.6 2.6 M, D, P, L, R

31、1 -2.6 2.6 Input bias current +IIBVCM= 0 V, 3/ 1 01, 02 -130 130 nA +RS= 10 k, 2 -105 105 -RS= 100 3 -235 235 M, D, P, L, R 1 -630 630 -IIBVCM= 0 V, 3/ 1 -130 130 +RS= 100 , 2 -105 105 -RS= 10 k 3 -235 235 M, D, P, L, R 1 -630 630 Input offset current IIOVCM= 0 V, 3/ 1 01, 02 -42 42 nA +RS= 10 k, 2

32、-28 28 -RS= 10 k 3 -235 235 M, D, P, L, R 1 -630 630 Large signal voltage gain +AVOLVOUT= 0 V and +10 V, 3/ 1 01, 02 110 kV/V RL= 2 k 2 150 3 75 M, D, P, L, R 1 40 -AVOLVOUT= 0 V and -10 V, 3/ 1 110 RL= 2 k 2 150 3 75 M, D, P, L, R 1 40 See footnotes at end of table. Provided by IHSNot for ResaleNo

33、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -

34、55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Common mode rejection ratio +CMRR V+ = 3 V, V- = -27 V, 3/ 1, 2, 3 01, 02 80 dB VCM= +12 V, VOUT= -12 V -CMRR V+ = 27 V, V- = -3 V, 3/ 80 VCM= -12 V, VOUT= +12 V Output voltage swing +VOUTRL= 2 k 3/ 1, 2, 3 01,

35、 02 11 V RL= 10 k 3/ 12 -VOUTRL= 2 k 3/ -11 RL= 10 k 3/ -12 Output current +IOUTVOUT= -5 V, 3/ 1, 2, 3 01, 02 10 mA M, D, P, L, R 1 8 -IOUTVOUT= +5 V 3/ 1, 2, 3 -10 M, D, P, L, R 1 -8 Quiescent power supply current +ICCIOUT= 0 mA 3/ 1, 2, 3 01, 02 5.5 mA -ICCIOUT= 0 mA 3/ 1, 2, 3 -5.5 Power supply r

36、ejection ratio +PSRR VSUP= 10 V, 3/ 1, 2, 3 01, 02 80 dB V- = -15 V, V+ = 10 V and 20 V -PSRR VSUP= 10 V, 3/ 1, 2, 3 80 V+ = 15 V, V- = -10 V and -20 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU

37、IT DRAWING SIZE A 5962-98533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min

38、 Max Rise and fall time TRVOUT= 0 V to 200 mV, 4/ 4, 5, 6 01, 02 200 ns 10% TR 90%, see figure 2 TFVOUT= 0 V to -200 mV, 4/ 4, 5, 6 200 10% TR 90%, see figure 2 Settling time TSAVCL= -1, 5/ 6/ 7/ 9 01, 02 6 s see figure 2 Quiescent power consumption PCVOUT= 0 V, 5/ 6/ 8/ 4, 5, 6 01, 02 165 mW IOUT=

39、0 mA Slew rate +SR VOUT= -3 V to +3 V, 4/ 4, 5 01, 02 1.7 V/s see figure 2 6 1.35 M, D, P, L, R 4 1.2 -SR VOUT= +3 V to -3 V, 4/ 4, 5 1.7 see figure 2 6 1.35 M, D, P, L, R 4 1.2 Overshoot +OS VOUT= 0 V to 200 mV, 4/ 4 01, 02 45 % see figure 2 5, 6 50 -OS VOUT= 0 V to -200 mV, 4/ 4 45 see figure 2 5,

40、 6 50 Differential input resistance RINVCM= 0 V 5/ 6/ 4 01, 02 250 k Input noise voltage density ENRS= 20 , 5/ 6/ fO= 1000 Hz 4 01, 02 6 nV / Hz Input noise current density INRS= 2 M, 5/ 6/ fO= 1000 Hz 4 01, 02 3 pA / HzFull power bandwidth FPBW VPK= 10 V 5/ 6/ 9/ 4 01, 02 32 kHz See footnotes at en

41、d of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98533 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics

42、 - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Minimum closed loop stable gain CLSG RL= 2 k, 5/ 6/ 4, 5, 6 01, 02 1 V/V CL= 50 pF Output resistance ROUTOpen loop 5/ 6/ 4 01, 02 150 Channel separation CS RS= 1 k, 5

43、/ 6/ 4 01, 02 90 dB AVCL= 100 V/V, VIN= 100 mV RMS at 10 kHz, referenced to input 1/ RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. However, device type 01 is only tested at the “R” level in accordance with MIL-STD-883 method 1019 condition A (see

44、1.5 herein). RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels M, D, P, and L for condition D. However, device type 02 is only tested at the “R” level in accordance with MIL-STD-883, method 1019, condition A and tested at the

45、 “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ RHA device type 01 may be dose rate sens

46、itive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ Unless otherwise specified, device tested at: supply voltage = 15 V, sour

47、ce resistance (RS) = 100 , load resistance (RL) = 100 k, VOUT= 0 V. 4/ Unless otherwise specified, device tested at: supply voltage = 15 V, source resistance (RS) = 50 , load resistance (RL) = 2 k, load capacitance (CL) = 50 pF, AVCL= 1 V/V. 5/ Unless otherwise specified, device tested at: supply vo

48、ltage = 15 V, load resistance (RL) = 2 k, load capacitance (CL) = 50 pF, AVCL= 1 V/V. 6/ If not tested, shall be guaranteed to the limits specified in table I herein. 7/ Settling time measured from the 90% point of a 10 V input pulse to within 10 mV of the settled value. 8/ Quiescent power consumption based upon quiescent supply current test maximum. No load on outputs. 9/ Full power bandwidth guarantee based on slew rate measurement using