DLA SMD-5962-96664 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS MICROPOWER PHASE LOCKED LOOP MONOLITHIC SILICON《互补金属氧化物半导体微功率定相锁环硅单片电路数字微电路》.pdf

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1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R274-97. 97-04-04 Monica L. PoelkingBChanges in accordance with NOR 5962-R421-97. 97-08-14Monica L. PoelkingCUpdate boilerplate and die appendixes. Editorial changes throughout. 00-04-19Monica L. PoelkingREVSHEETR

2、EV CCCCCCSHEET 15 16 17 18 19 20REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Joseph A. KerbyDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYMonica L. PoelkingCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonic

3、a L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE96-01-31MICROCIRCUIT, DIGITAL, RADIATIONHARDENED, CMOS, MICROPOWER PHASELOCKED LOOP, MONOLITHIC SILICONAMSC N/AREVISION LEVEL SIZEACAGE CODE672685962-96664CSHEET1 OF 20DSCC FORM 2233APR 97 5962-E196-00DISTRIBUTION STATEMENT A.

4、 Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96664DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET2DSCC FORM 2234APR 971. SCOP

5、E1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a c

6、hoice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 - 96664 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock class designator type class outline finishdesi

7、gnator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL

8、-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 4046B Radiation hardened CMOS micropowe

9、r phase locked loop02 4046BN Radiation hardened CMOS micropower phase locked loop and neutron irradiated die1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-cert

10、ification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Des

11、criptive designator Terminals Package styleE CDIP2-T16 16 Dual-in-line packageX CDFP4-F16 16 Flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or netwo

12、rking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96664DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VDD). -0.5 V dc to +20 V dcInput voltage range -0.5 V dc

13、 to VDD+ 0.5 V dcDC input current, any one input 10 mADevice dissipation per output transistor . 100 mWStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds) +265CThermal resistance, junction-to-case (JC):Case E 24C/WCase X 29C/WThermal resistance, junction-to-ambient

14、 (JA):Case E 73C/WCase X 114C/WJunction temperature (TJ) . +175CMaximum power dissipation at TA= +125C (PD): 4/Case E 0.68 WCase X 0.44 W1.4 Recommended operating conditions.Supply voltage range (VDD). 3.0 V dc to +18 V dcCase operating temperature range (TC) . -55C to +125CInput voltage (VIN) 0 V t

15、o VDDOutput voltage (VOUT) 0 V to VDDRadiation features:Total dose 1 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold, no upsets or latchup (see 4.4.4.5) 75 MEV/(cm2/mg) 5/Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/Dose rate latch-up . 2 x 108Rads(Si)/s 5/Dose rat

16、e survivability . 5 x 1011Rads(Si)/s 5/Neutron irradiated (device type 02) . 1 x 1014neutrons/cm22. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless othe

17、rwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Speci

18、fication for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operati

19、on at the maximumlevels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to+125C unless otherwise noted.4/

20、 If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at thefollowing rate:Case E . 13.7 mW/CCase X 8.8 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted

21、without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96664DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 97HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Draw

22、ings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and th

23、e references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be i

24、n accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance wi

25、th MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as sp

26、ecifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Radiat

27、ion exposure circuit. The radiation exposure circuit shall be as specified in table III herein.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as spe

28、cified in table I and shall apply over the fullcase operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with th

29、e PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using

30、 this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V

31、 shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order t

32、o supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to l

33、isting as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certific

34、ate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliveredto this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change

35、of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96664DEFENSE SUPPLY CENTER COLUMBUSCOLUMB

36、US, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 973.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be m

37、adeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 39 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device clas

38、ses Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspectio

39、n procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be

40、inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufactu

41、rer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimu

42、m.b. Interim and final electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in acc

43、ordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit sh

44、allspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requ

45、irements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 an

46、d herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance withMIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 ofMIL-PRF

47、-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be inaccordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall bethose specified in method 5005 of MIL-STD-883 and herein for groups

48、 A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96664DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE

49、I. Electrical performance characteristics.LimitsTest SymbolConditions-55C VDD/2VOL4.5 VVOL9.0 V 1/VOL13.5 VVOL4.5 VVOL9.0 V 1/VOL13.5 VVOL 1.5 VAll1.2.3 11.0V1 -100VDD= 20 V2 -10003-state leakage currentlowIOZLVIN= VDDorGNDVOUT= 0.0 VVDD= 18 VAll3 -100nA1 100VDD= 20 V2 10003-state leakage currenthighIOZHVIN= VDDorGNDVOUT= VDDVDD= 18 VAll3 100nASee footnotes