DLA SMD-5962-96573 REV G-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R087-97. - JB 96-11-19 Monica L. Poelking B Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout

2、. - TVN 07-04-25 Thomas M. Hess C Add device types 02 and 03. Add die appendix. Change voltage levels in figure 4, switching waveforms and test circuit. Add footnote 6/ to table IB and remove table III, Irradiation test connections - jak 08-05-07 Thomas M. Hess D Add information to footnote 6/ in se

3、ction 1.5 and update boilerplate to current MIL-PRF-38535 requirements.- MAA 08-12-17 Thomas M. Hess E Update supply voltage range (VDD) for device types 02 and 03 in section 1.4. Update boilerplate paragraphs to current MIL-PRF-38535 requirements.- MAA 09-08-12 Thomas M. Hess F Correct output curre

4、nt source (IOH) and output current sink (IOL) for 4.5 V and 5.5 V operation in table IA. Update radiation features in section 1.5 and SEP table IB. - MAA 10-04-09- Thomas M. Hess G Add equivalent test circuit and footnote 5 in figure 4. - MAA 12-05-10 Thomas M. Hess REV SHEET REV G G G G G G G G G G

5、 SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS OF SHEETS REV G G G G G G G G G G G G G G SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILA

6、BLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPR

7、OVAL DATE 96-03-28 REVISION LEVEL G SIZE A CAGE CODE 67268 5962-96573 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E291-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96573 DLA LAND AND MARITIME COLUMBUS, OHI

8、O 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are

9、reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96573 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.

10、2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devic

11、es meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS245 Radiation

12、hardened, octal bus transceiver with three-state outputs, TTL compatible inputs 02 54ACTS245E Enhanced radiation hardened, octal bus transceiver with three-state outputs, TTL compatible inputs 03 54ACTS245E Enhanced radiation hardened, octal bus transceiver with three-state outputs, TTL compatible i

13、nputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in acc

14、ordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CDFP4-F

15、20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

16、96573 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.

17、3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC): Case outlines R and X, device type 01 See MIL-STD-1835 Case outline X,

18、device types 02 and 03 . 15C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Device type 02 and 03 . 3.3 W 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device types 02 and 03 . +3.0

19、 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDInput voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time rate at VDD= 4.5 V (tr, tf) . 1 ns/V 5/ Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Maxim

20、um total dose available: Device type 01 (dose rate = 50 300 rads(Si)/s) . 5 x 105rads(Si) Device type 02 (effective dose rate = 1 rad(Si)/s) 1 x 106rads(Si) 6/ Device type 03 (dose rate = 50 300 rads(Si)/s) . 5 x 105rads(Si) Single event phenomenon (SEP) effective: Device type 01: Linear energy thre

21、shold (LET), no upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 8/ 7/ Linear energy threshold (LET), no latch-up (see 4.4.4.4) 120 MeV/(mg/cm2) 8/ 7/ Device types 02 and 03: Linear energy threshold (LET), no upsets (see 4.4.4.4) 108 MeV/(mg/cm2) 8/ 7/ Linear energy threshold (LET), no latch-up (see 4.4.4.4) 12

22、0 MeV/(mg/cm2) 8/ 7/ Dose rate upset (20 ns pulse) 1 x 109rads(Si)/s 8/ 9/ Dose rate induced latch-up . None 8/ Dose rate survivability . 1 x 1012rads(Si)/s 8/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade

23、 performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 101

24、2.1 section 3.4.1, PD(Package) = (TJ(max) - TC(max) . JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed t

25、o a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. 7/ Radiati

26、on testing is performed on the standard evaluation circuit (SEC). 8/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 9/ This limit is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types

27、02 and 03 do not meet this limit at VDD 4.5 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96573 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABL

28、E DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

29、OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103

30、- List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-

31、Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the

32、 Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from: ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence.

33、 In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements.

34、 The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The

35、 individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this documents. 3.2 Design, construction, and physical

36、 dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal conn

37、ections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit sha

38、ll be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96573 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure ci

39、rcuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise spec

40、ified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA

41、. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manu

42、facturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix

43、A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a

44、 certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in

45、MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for de

46、vice class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered t

47、o this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device cl

48、ass M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcir

49、cuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96573 DLA LAND AND M