DLA SMD-5962-95662 REV B-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《互补金属氧化物半导体数字.pdf

《DLA SMD-5962-95662 REV B-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《互补金属氧化物半导体数字.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95662 REV B-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《互补金属氧化物半导体数字.pdf（30页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)98-10-16Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EI

4、THER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad

5、StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R003-99a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-956629. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS,OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE10. REVISION

6、LETTER11. ECP NO.No users listed.INPUTS, MONOLITHIC SILICON a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1 : Revisions ltr column; add “B“.Revisions description column; add “ Changes in accordance with NOR 5962-R003-99“.Revisions date c

7、olumn ; add “98-10-16“.Revision level block; change from “A” to “B“.Rev status of sheets; for sheet 1 change from “A” to “B ” , for sheets 3, 4 and 18 through 24, add “B“.Sheet 3: 1.3 Absolute maximum ratings , Supply voltage range ( V cc ); change limits from “-0.5 V dc to +6.0 V dc , to “-0.5 V dc

8、 to +7.0 V dc”.Sheet 4 : Add new paragraph which states; “3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “B“.Sheets 18 through 24: Add attached appendix A.CONTINUED ON NEXT SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa.

9、 (X one) X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE F

10、ORGOVERNMENTDSCC -VASc. TYPED NAME (First, Middle Initial, Last)RAYMOND L. MONNINd. TITLECHIEF, MICROELECTRONICS TEAMe. SIGNATURERAYMOND L. MONNINf. DATE SIGNED(YYMMDD)98-10-1615a. ACTIVITY ACCOMPLISHING REVISIONDSCC -VASb. REVISION COMPLETED (Signature)TIN H. LEc. DATE SIGNED(YYMMDD)98-10-16DD Form

11、 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 18DSCC FORM 2234APR 97Document No

12、: 5962-95662Revision: BAPPENDIX A NOR No : 5962-R003-99APPENDIX A FORMS A PART OF SMD 5962-95662 Sheet: 2 of 8 10. SCOPE10.1 Scope . This appendix establishes minimum requirements for microcircuit die to be supplied under the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting th

13、e requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices usingchip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting ofmi

14、litary high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number(PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN . The PIN shall be as shown in the following example:5962 F

15、 95662 01 V 9 AFederal RHA Device Device Die DieStock class designator type class co de Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)( see 10.2.3) Drawing Number 10.2.1 RHA designator . Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels.

16、 Adash (-) indicates a non-RHA die.10.2.2 Device type(s) . The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 ACTS374 Radiation hardened, SOS,advanced CMOS, octal D flip- flop with three-state output,TTL compatible inputs.02 ACTS374-02 Rad

17、iation hardened, SOS,advanced CMOS, octal D flip- flop with three-state output,TTL compatible inputs.10.2.3 Device class designator .Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MIL-PRF-38535.Provided by IHSNot for ResaleNo reproduct

18、ion or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 19DSCC FORM 2234APR 97Document No : 5962-95662Revision: BAPPENDIX A NOR No : 5962-R003-99APPENDIX A FORMS A PART OF SMD

19、5962-95662 Sheet: 3 of 8 10.2.4 Die Details . The die details designation shall be a unique letter which designates the dies physical dimensions, bondingpad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product andvariant suppli

20、ed to this appendix.10.2.4.1 Die Physical dimensions .Die Types Figure number01, 02 A-110.2.4.2 Die Bonding pad locations and Electrical functions .Die Types Figure number01, 02 A-110.2.4.3 Interface Materials .Die Types Figure number01, 02 A-110.2.4.4 Assembly related information .Die Types Figure

21、number01, 02 A-110.3 Absolute maximum ratings . See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions . See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handboo

22、ks . Unless otherwise specified, the following specifications,standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IH

23、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 20DSCC FORM 2234APR 97Document No : 5962-95662Revision: BAPPENDIX A NOR No : 5962-R003-99APPE

24、NDIX A FORMS A PART OF SMD 5962-95662 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Stand

25、ard Microcircuit Drawings.(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence . In the event of

26、 a conflict between the text of this drawing and the references cited herein, the text ofthis drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements . The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modi

27、fied in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions . The design, construction and physical dimensions shall be as specified inMIL-PRF-38535 and

28、the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical dimensions . The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions . The die bonding pad locations and electrical functions shall b

29、e asspecified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials . The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information . The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table

30、. The truth table shall be as defined within paragraph 3.2.3 of the body of this document.30.2.6 Radiation exposure circuit . The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of thisdocument.Provided by IHSNot for ResaleNo reproduction or networking permitted wit

31、hout license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 21DSCC FORM 2234APR 97Document No : 5962-95662Revision: BAPPENDIX A NOR No : 5962-R003-99APPENDIX A FORMS A PART OF SMD 5962-95662 Sheet: 5 of 8 30.3 E

32、lectrical performance characteristics and post- irradiation parameter limits . Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document.30.4 Electrical test requirements . The wafer pro

33、be test requirements shall include functional and parametric testing sufficient tomake the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking . As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a custome

34、r,shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance . For device classes Q and V, a certificate of comp

35、liance shall be required from aQML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets

36、, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shallbe provided with each lot of microcircuit die delivered to this drawing.40. QUALITY

37、ASSURANCE PROVISIONS40.1 Sampling and inspection . For device classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QMplan shall not effect the form, fit or fu

38、nction as described herein.40.2 Screening . For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Clas s V product using the criteria defined within MIL-STD-883 TM 5007

39、.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

40、m IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 22DSCC FORM 2234APR 97Document No : 5962-95662Revision: BAPPENDIX A NOR No : 5962-R003-99APPENDIX A FORMS A PART OF SMD 5962-95662 Sheet: 6 of 8 40.3 Conformance inspe

41、ction .40.3.1 Group E inspection . Group E inspection is required only for parts intended to be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table I

42、IA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.50. DIE CARRIER50.1 Die carrier requirements . The requirements for the die carrier shall be in accordance with the manufacturers QM plan oras specified in the purchase order b

43、y the acquiring activity. The die carrier shall provide adequate physical, mechanical andelectrostatic protection.60. NOTES60.1 Intended use . Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government micro

44、circuit applications (original equipment), design applications and logisticspurposes.60.2 Comments . Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions . The abbreviations, symbols, and definition

45、s used herein are defined withMIL-PRF-38535 and MIL-HDBK-1331.60.4 Sources of Supply for device classes Q and V . Sources of supply for device classes Q and V are listed in QML-38535.The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have

46、agreedto this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 23DSCC FORM 2234APR 97Document No : 5962-95662Revision: B

47、APPENDIX A NOR No : 5962-R003-99APPENDIX A FORMS A PART OF SMD 5962-95662 Sheet: 7 of 8 FIGURE A-1o DIE PHYSICAL DIMENSIONSDie Size: 2591 x 2591 microns.Die Thickness: 21 +/- 2 mils. DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSThe following metallization diagram supplies the locations and elec

48、trical functions of the bonding pads. The internal metallizationlayout and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this SMD.NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines R, X (see Figure 1).Provided by IH

49、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95662DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 24DSCC FORM 2234APR 97Document No : 5962-95662Revision: BAPPENDIX A NOR No : 5962-R003-99APPENDIX A FORMS A P