DLA SMD-5962-95661 REV D-2009 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R314-97 97-10-22 Monica L. Poelking B Changes in accordance with NOR 5962-R011-99 98-10-29 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 00

2、-08-10 Monica L. Poelking D Correct the radiation features in section 1.5 and paragraph 4.4.4.1. Update the boilerplate paragraphs as requirement of current MIL-PRF-38535. - MAA 09-05-04 Thomas M. Hess REV SHET REV D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 REV STATUS REV D D D D D

3、 D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPRO

4、VED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-20 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 59

5、62-95661 SHEET 1 OF 25 DSCC FORM 2233 APR 97 5962-E282-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95661 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234

6、 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). W

7、hen available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95661 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designato

8、r (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA

9、levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ACTS373 Radiation hardened SOS, advanced CMOS, octal transparent latch w

10、ith three-state outputs TTL compatible inputs 02 ACTS373-02 1/ Radiation hardened SOS, advanced CMOS, octal transparent latch with three-state outputs TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follow

11、s: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outlin

12、e(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R CDIP2-T20 20 Dual-in-line package X CDFP4-F20 20 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, append

13、ix A for device class M. _ 1/ Device type -02 is the same as device type -01 except that the device type -02 products are manufactured at an overseas wafer foundry. Device type -02 is used to positively identify, by marketing part number and by brand of the actual device, material that is supplied b

14、y an overseas foundry.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95661 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings

15、. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 50 mA Storage temperature range (TSTG

16、) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline R . 24C/W Case outline X 28C/W Thermal resistance, junction-to-ambient (JA): Case outline R . 72C/W Case outline X 107C/W Junction temperature (TJ) +175C Maximum package power di

17、ssipation at TA= +125C (PD): 4/ Case outline R . 0.69 W Case outline X 0.47 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8

18、 V Minimum high level input voltage (VIH). VCC/2 Case operating temperature range (TC). -55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf) 10 ns/V 1.5 Radiation features. Total dose available (Dose rate = 50 300 rads(Si)/s) . 3 x 105Rads (Si) Single event phenomenon (SEP) effectiv

19、e linear energy threshold (LET) no upsets (see 4.4.4.4). 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1011Rads (Si)/s 5/ Dose rate induced latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the de

20、vice. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C

21、 unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case R . 13.9 mW/C Case X 9.3 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo repro

22、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95661 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The fol

23、lowing specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing,

24、 General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcirc

25、uit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this docum

26、ent to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradi

27、ation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the ref

28、erences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in

29、 accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance

30、with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix - A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall b

31、e as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3

32、.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The

33、 radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICRO

34、CIRCUIT DRAWING SIZE A 5962-95661 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and

35、 postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I

36、. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device

37、. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark f

38、or device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 li

39、sted manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance s

40、ubmitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certi

41、ficate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M

42、, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to revi

43、ew the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (s

44、ee MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95661 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical

45、 performance characteristics. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Min Max Unit For all inputs affecting output under test VIH=2.25 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 4.40 M, D, L, R,

46、 F 3/ All 4.5 V 1 4.40 For all inputs affecting output under test VIH=2.75 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, L, R, F 3/ All 5.5 V 1 5.40 V For all inputs affecting output under test VIH=2.25 V or VIL= 0.8 V For all othe

47、r inputs VIN= VCCor GND IOL= +50 A All 1, 2, 3 0.1 M, D, L, R, F 3/ All 4.5 V 1 0.1 For all inputs affecting output under test VIH=2.75 V or VIL= 0.8 V For all other inputs VIN= VCCor GND IOL= +50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, L, R, F 3/ All 5.5 V 1 0.1 V 1 +0.5 For input under

48、 test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 2, 3 +1.0 Input current high IIHM, D, L, R, F 3/ All 5.5 V 1 +1.0 A 1 -0.5 For input under test, VIN= GND For all other inputs VIN= VCCor GND All 2, 3 -1.0 Input current low IILM, D, L, R, F 3/ All 5.5 V 1 -1.0 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S