DLA SMD-5962-95657 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT AND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-95657 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT AND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-95657 REV D-2010 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS QUAD 2-INPUT AND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(21页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R309-97. 97-10-22 Monica L. Poelking B Changes in accordance with NOR 5962-R005-99. 98-10-16 Raymond L. Monnin C Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. tmh 00-
2、08-01 Monica L. Poelking D Update radiation features in section 1.5, table IB SEP test limits, and paragraphs 4.4.4.1 4.4.4.4. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 10-03-25 Thomas M. Hess REV SHET REV D D D D D D SHEET 15 16 17 18 19 20 REV STATUS REV D D D
3、D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMEN
4、T OF DEFENSE CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, QUAD 2-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-12-29 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95657 SHEET 1 OF 20 DS
5、CC FORM 2233 APR 97 5962-E232-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95657 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scop
6、e. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice o
7、f Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95657 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) /
8、(see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with t
9、he appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ACTS08 Radiation hardened SOS, advanced CMOS, quad 2-input AND gate, TTL compatible inputs 02 ACTS08
10、-02 1/ Radiation hardened SOS, advanced CMOS, quad 2-input AND gate, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to t
11、he requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive
12、designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Device type 02 is the same as device type 01 except that the devi
13、ce type 02 products are manufactured at an overseas wafer foundry. Device type 02 is used to positively identify, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry. Provided by IHSNot for ResaleNo reproduction or networking permitted without
14、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95657 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V d
15、c to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) . 50 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to
16、-case (JC): Case outline C . 24C/W Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X . 116C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C . 0.68 W Case outline X . 0.43 W 1.4 Recommend
17、ed operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V Minimum high level input voltage (VIH) . VCC/2 Case operating temperature range (TC) .
18、-55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf) 10 ns/V 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 3 x 105rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dos
19、e rate upset (20 ns pulse) . 1 x 1011rads (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Un
20、less otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sin
21、king or derate linearly (the derating is based on JA) at the following rate: Case C 13.5 mW/C Case X 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962
22、-95657 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified her
23、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microc
24、ircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksear
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