DLA SMD-5962-94599 REV B-2006 MICROCIRCUIT MEMORY DIGITAL 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS MONOLITHIC SILICON《硅单片 在功率损耗上装有自动储存的8K X 8非易失性静态随机存取存储器 数.pdf

《DLA SMD-5962-94599 REV B-2006 MICROCIRCUIT MEMORY DIGITAL 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS MONOLITHIC SILICON《硅单片 在功率损耗上装有自动储存的8K X 8非易失性静态随机存取存储器 数.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-94599 REV B-2006 MICROCIRCUIT MEMORY DIGITAL 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS MONOLITHIC SILICON《硅单片 在功率损耗上装有自动储存的8K X 8非易失性静态随机存取存储器 数.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 01-05-16 Raymond Monnin B Boilerplate update and part of five year review. tcr 06-04-27 Raymond Monnin REV SHET REV B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 REV

2、 STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DE

3、PARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-08-12 MICROCIRCUIT, MEMORY, DIGITAL, 8K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94599 SHEET 1 OF 23

4、 DSCC FORM 2233 APR 97 5962-E416-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 S

5、cope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choic

6、e of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94599 01 M X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.

7、5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked w

8、ith the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Access Store Recall Device type Generic number Circuit function Time Cycle Cycle Endurance 01 12C68 8K X 8 NVSRAM 55 ns 12 ms 25 s 100,000 cyc

9、les 02 12C68 8K X 8 NVSRAM 45 ns 12 ms 25 s 100,000 cycles 03 12C68 8K X 8 NVSRAM 35 ns 12 ms 25 s 100,000 cycles 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor

10、self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outl

11、ine letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line Y CQCC3-N28 28 Rectangular leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided

12、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (

13、Vcc) -0.6 V dc to 7.0 V dc Voltage on DQ(0-7)with outputs in high Z state. -0.5 V to (Vcc+0.5 V) Input voltage operating range (VIH, VIL) -0.6 V dc to 7.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) . 1.0 W Maximum output current 15 mA Lead temperature (soldering) 300

14、C Junction temperature (TJ) 3/ . 175C Thermal resistance, junction to case (JC) . See MIL-STD-1835 Data retention 10 years to nonvolatile array (minimum) Endurance (as store cycles to non-volatile array) 100,000 store cycles (minimum) 1.4 Recommended operating conditions. 1/ 2/ Supply voltage range

15、(Vcc) +4.5 V dc to +5.5 V dc Case operating temperature range (TC). -55C to +125C Input voltage, low range (VIL). VSS-0.5 V dc to 0.8 V dc, all inputs Input voltage, high range (VIH) . 2.2 V dc to VCC+0.5 V dc, all inputs 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks

16、. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manu

17、facturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard

18、 Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating

19、 may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ All voltages are referenced to VSS(ground). 3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in

20、 accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94599 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 N

21、on-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Lat

22、ch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the document

23、s. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, super

24、sedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality

25、 Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, con

26、struction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 here

27、in. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns cannot be im

28、plemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring ac

29、tivity upon request. For device classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance ch

30、aracteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The ele

31、ctrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the en

32、tire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking f

33、or device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, ap

34、pendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a

35、manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, t

36、he requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94599 DEFENSE SUPPLY CENTER COLUMBU

37、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivere

38、d to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For dev

39、ice class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device

40、 class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 3.11 Endurance. A reprogrammability test shall be completed as part of the vendors reliability monitors. This reprogrammability test shall be done for initial characterization and after

41、 any design or process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor specific, but shall guarantee the number of program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. The vendors procedure shall

42、be kept under document control and shall be made available upon request of the acquiring or preparing activity, along with test data. 3.12 Data retention. A data retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for initial characterization

43、 and after any design or process changes which may affect data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document control and s

44、hall be made available upon request of the acquiring or preparing activity, along with test data. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality M

45、anagement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accorda

46、nce with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Addit

47、ional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

48、 specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V.

49、 a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-3853