DLA SMD-5962-94514 REV B-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUIT MONOLITHIC SILICON《硅单片 微处理器监督电路 氧化物半导体线性微型电路》.pdf
《DLA SMD-5962-94514 REV B-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUIT MONOLITHIC SILICON《硅单片 微处理器监督电路 氧化物半导体线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-94514 REV B-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUIT MONOLITHIC SILICON《硅单片 微处理器监督电路 氧化物半导体线性微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R020-95. 94-10-21 M. A. FRYE B Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. Redrawn. -rrp 04-05-13 R. MONNIN REV SHET REV SHET REV STATUS R
2、EV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROV
3、ED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, MICROPROCESSOR SUPERVISORY CIRCUIT, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-01-18 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94514 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E279-04 Provided by IHSNot
4、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94514 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance clas
5、s levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are refl
6、ected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94514 01 M P X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator.
7、 Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicate
8、s a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX1232 Microprocessor supervisory circuit 1.2.3 Device class designator. The device class designator is a single letter identifying the product assur
9、ance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline
10、(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device cl
11、asses Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94514 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM
12、 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage to ground (VCCto GND) -0.3 V to +6.0 V Maximum current at any terminal 10 mA Input voltage ST , TOL, RST PB , TD -0.3 V to (VCC+ 0.3 V) Power dissipation (PD) at TA= +70C: Case P 640 mW 2/ Case 2 727 mW 2/ Lead temperature (soldering, 10 s
13、econds) . +300C Storage temperature range . -65C to +160C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case P +125C/W Case 2 +110C/W 1.4 Recommended operating conditions. Supply voltage range +4.5 V to +5.5 V Ambient operating temperature r
14、ange (TA) . -55C to +125C Input capacitance (CIN) at ST and TOL pins 5 pF Output capacitance (COUT) at RST and RST pins 7 pF 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent
15、 specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE SPECIFICATION MIL-STD-883 - Test Meth
16、od Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE SPECIFICATION MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.d
17、aps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawi
18、ng takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance
19、 and affect reliability. 2/ For case P, derate 8.0 mW/C at TA +70C. For case 2, derate 9.09 mW/C at TA +70C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94514 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO
20、 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The
21、 modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical di
22、mensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connect
23、ions. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics a
24、nd postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table
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