DLA SMD-5962-88713 REV A-2006 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC ARRAY MONOLITHIC SILICON《硅单片可编程逻辑阵列互补型金属氧化物半导体数字存储微电路》.pdf
《DLA SMD-5962-88713 REV A-2006 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC ARRAY MONOLITHIC SILICON《硅单片可编程逻辑阵列互补型金属氧化物半导体数字存储微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88713 REV A-2006 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC ARRAY MONOLITHIC SILICON《硅单片可编程逻辑阵列互补型金属氧化物半导体数字存储微电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update, part of 5 year review. ksr 06-08-30 Raymond Monnin THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY
2、 Kenneth S. Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 88-
3、09-23 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-88713 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E605-06 .Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN
4、DARD MICROCIRCUIT DRAWING SIZE A 5962-88713 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF
5、-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-88713 01 R A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: D
6、evice type Generic number 1/ Circuit function tPD01,05,09 C16L8 16-input 8-output AND-OR invert logic array 40,30,20 ns 02,06,10 C16R8 16-input 8-output registered AND-OR logic array 40,30,20 ns 03,07,11 C16R6 16-input 6-output registered AND-OR logic array 40,30,20 ns 04,08,12 C16R4 16-input 4-outp
7、ut registered AND-OR logic array 40,30,20 ns 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20-lead dual-in-line package S GDFP2-F20 or CDFP3-F20 20-lead flat package
8、X CQCC2-N20 20-terminal square chip carrier package 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage range - -0.5 V dc to +7.0 V dc DC voltage applied to outputs in High Z - -0.5 V dc to +7.0 V dc DC input voltage - -3.0 V
9、dc to +7.0 V dc Output sink current- 24 mA Thermal resistance, junction-to-case (JC):- See MIL-STD-1835 Maximum power dissipation (PD) 1/- 1.0 W Maximum junction temperature (TJ) - +175C Lead temperature (soldering, 10 seconds maximum) +260C Storage temperature range - -65C to +150C Temperature unde
10、r bias range - -55C to +125C 1.4 Recommended operating conditions. Supply voltage (VCC) - 4.5 V dc to 5.5 V dc High-level input voltage (VIH) - 2.0 V dc minimum Low-level input voltage (VIL)- 0.8 V dc maximum Case operating temperature range (TC) - -55C to +125C 1/ Must withstand the added PDdue to
11、short circuit test, e.g., IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88713 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUM
12、ENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFE
13、NSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List
14、 of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA
15、 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
16、3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified ma
17、nufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Manag
18、ement (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify w
19、hen the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Truth tab
20、le. The truth table shall be as specified on figure 2. 3.2.2.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 2. When required in groups A, B, or C (see 4.3), the devices shall be programmed by the manufa
21、cturer prior to test with a minimum of 50 percent of the total number of gates programmed or to any altered item drawing pattern which includes at least 25 percent of the total number of gates programmed. 3.2.2.2 Programmed devices. The truth tables for programmed devices shall be as specified by an
22、 attached altered item drawing. 3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case op
23、erating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596288713REVA2006MICROCIRCUITMEMORYDIGITALCMOSPROGRAMMABLELOGICARRAYMONOLITHICSILICON 单片 可编程 逻辑

链接地址:http://www.mydoc123.com/p-699348.html