DLA SMD-5962-88652-1989 MICROCIRCUIT DIGITAL FAST CMOS HIGH SPEED CARRY LOOKAHEAD GENERATOR MONOLITHIC SILICON《硅单片高速向前进行发电机高速互补型金属氧化物半导体数字微电路》.pdf
《DLA SMD-5962-88652-1989 MICROCIRCUIT DIGITAL FAST CMOS HIGH SPEED CARRY LOOKAHEAD GENERATOR MONOLITHIC SILICON《硅单片高速向前进行发电机高速互补型金属氧化物半导体数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88652-1989 MICROCIRCUIT DIGITAL FAST CMOS HIGH SPEED CARRY LOOKAHEAD GENERATOR MONOLITHIC SILICON《硅单片高速向前进行发电机高速互补型金属氧化物半导体数字微电路》.pdf(15页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONS LTR DESCRIPTION DATE (VR-MO-PA) APPROVED t REV SHEET REV SHEET REV STATUS REV OF SHEETS I 1 SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PMIC NIA STANDARDIZED MILITARY DRAWING MIS DRAWING IS AVAILABLE OR USE BY ALL DEPARTMENTS AND AGENCIES OFME DEPARTMENT OF DEFENSE AMSC NIA DEFENSE ELECTRONI
2、CS SUPPLY CENTER DAYTON, OHIO 45444 I SILICON CAGE CODE SIZE 20 JUNE 1989 A 67268 596-52 REVISION LEVEL I I SHEET 1 OF 15 II U.S. GOVEiiMEHT CRINlINO OFFKE: 1987 - 746.129/60911 DESC FORM 193 SEP 87 5962-E1257-3 DISTRIBUTION STATEMENT A. Approved lor public release; dlstrlbutlon Is unlimited. Provid
3、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.1 SCO e. This drawing describes device requirements for class B microcircuits 3n accordance with 1.d of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN dev
4、ices“, 1.2 Part number. The complete part number shall be as shown in the following example: 5962-88652 1 I “f- 1 E -r I X -I- I 1 I 1 I I I I 1 Drawing number Device type Case outline (12.11 (1.2.2) MI L-M- 385 10 1.2.1 Device types, The device types shall identify the circuit function as follows:
5、Device type Generic number Circuit function o1 02 54FCT 182 54FCT182A High speed carry lookahead generator High speed carry lookahead generator 1.2.2 Case outlines. The case outlines shalJ be as designated in appendix C of MIL-M-38510, and IS follows: Outline letter Case outline E D-2 (16-lead, .MOH
6、 x ,310“ x .200“), dual-3n-line package F 2 F-5 (16-lead, ,440 x .285“ x .085“), flat package C-2 (20-terminal, ,358“ x ,358“ x .loo“), square chip carrier package 1.3 Absolute maximum ratings. L/ Supply voltage range - - - - - - - - - - - - - - - - Input voltage range- - - - - - - - - - - - - - - -
7、 - Output voltage range - - - - - - - - - - - - - - - - DC input diode current (I DC output diode current (iO)- - - - - - - - - - - - DC output current- - - - - - - - - - Maximum power dissipation (PD) 2/- - - - - - - - - - Thermal resistance, junction-tGcase (ojC) - - - - - Storage temperature rang
8、e- - - - - - - - - - - - - - Junction temperature (TJ)- - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - -9.5 V dc to t6.0 V dc -0.5 Y dc to Vcc + 0.5 V dc -0.5 Y dc to VCc + 0.5 V dc - - - - - - - - - - - - -20 mR -50 m9 500 mW See MIL-M-38510, appendix C -65C to +15Oo
9、C +175:C +300 C - - - - - - - *loo m4 1.4 Recomnended operating conditions. Supply volta e ran e (Vcc) - - - - - - - - - - - - - Maximum low fevel Qnput voltage (V Minimum high level input voltage (b1 - - - - - - - Case operating temperature (TC)- - - - - - - - - - - *4.5 V dc to t5.5 V dc - - - - -
10、 - - 0.8 V dc 2.0 V dc -55C to t125C /voltages referenced to GND. / Must withstand the added PD due to short circuit test; e.g., os. SIZE A L 5962-88652 STANDARDIZED MILITARY DRAWING I DEFENCE UECTRONW SUPPLY CENTER RAYTON, OHIO 45444 I 3 !SC FORM 193A SEP 87 *U. 8. OOVERNMENT PRtNTiNoFFIDE: 108(1-i
11、O-W4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- DESC-DWG-b52 57 m 7777775 00L3bL2 2 SIZE A STANDARDIZED I 2. APPLICABLE DOCUMENTS 5962-88652 2.1 Government specification and standard. Unless otherwise specified, the following Specification and
12、Standard, of the issue listed in that issue of the Department of Defense Index of I Specifications and Standards sDecified.in the solicitation. form a Dart of this drawing to the extent specified herein. SP ECIFICATI ON MILITARY MIL-K 38510 - Microcircuits, General Specification for. STANDARD MILITA
13、RY MI L-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. 1 - references citedp
14、nerein, Be text of this drawing shall take precedence. 2.2 Order of recedence. In the event of a conflict between the text.of this drawing and the 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of MIL-STD-WJ, “Provisions for the use of MIL-S
15、TD-883 in conjunction with compliant non-JAN devices“ and as specified herein. 3.2 Design, construction, and hysical dimensions. The design, construction, and physical dimensions shall be as specified tn MIL-M-38ISlO and herein. I 3.2.1 Terminal connections. The terminal connections shall be as spec
16、ified on figure 1. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Logic diagram, The logic diagram shall be as specified on figure 3. 3.2.4 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless other
17、wise specified, the electrical performance characteristics are as specified in table I and apply over the full case operating temperature range. 3.4 Markin . Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be marked de part number listed in 1.2 herein. In addition, t
18、he manufacturers part number may also be marked as listed in 6.4 herein 3.5 Certificate of com liance. A certificate of compliance shall be required from a manufacturer in order to be listed as in approved source of supply in 6.4. The certificate of compliance submitted to DESC-ECS prior to listing
19、as an approved source of supply shall state that the manufacturers product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirements herein. herein) shall be provided with each lot of microcircuits delivered to this drawing. 3.6 Certificate of conformance. A certificate of conforma
20、nce as required in MIL-STD-883 (see 3.1 rt U. S. QOVERNMENT PRINTING OFFICE: 1W-549-%U Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics. Test Condi tions I Group A IDevicel Limits IUnit jsmbol 1 -55C Vcc
21、 = 5.0 5.3 V, I 1, 2, 3 I ll I I 1.51 n Power supply (AICC IVcc = 5.5 V, VIN = 3.4 V g/ I 1, 2, 3 I All I I 2.01 n I vcc I I 1 (CMOS inputs) I I I I 1 I current (TTL inputs high) I I I I I I 1 I I Dynamic ower supply = 5.5 v I 4 1 I I I cur rent I 5.3 V or VIN 5 0.2 V, lone bft toggling: 50!% duty c
22、ycle I I I 1 I 1 I 4 I I I See footnotes at end of table. SIZE MILlTARY DRAWING A 62-am 1 STANDARDIZED MfENSE ELEcTRcIN1cc SUPPLY CENTER REVISION LEVEL SMEr v DAYTN,OHiO 45444 4 it u. a BOVERNMENTPR*ITKIG OFFIDE: I#c at fi / The #inlmm limftc #re guaranteed, ff not teCted, to the lim#ts speciffed fr
23、i table . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Definition of functional term T I r IPin names I Description I I I I 1% i Carry input i IFOS 3
24、2 lG1 1 Carry generate input (active low) I k3 I Carry generate input (active low) I I I I I Carry generate inputs (active low) I lO, Pl I Carry propagate inputs (active low) I Carry propagate input (active low) 13 I Carry propagate input (actfve low) IC, + x - Cn + 2 I Carry outputs IG f Carry gene
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