DLA SMD-5962-87564 REV C-2007 MICROCIRCUIT DIGITAL ECL TRIPLE 4-3-3 INPUT NOR GATE MONOLITHIC SILICON《硅单块 三重4-3-3输入或非门 发射极耦合逻辑 数字微型电路》.pdf

《DLA SMD-5962-87564 REV C-2007 MICROCIRCUIT DIGITAL ECL TRIPLE 4-3-3 INPUT NOR GATE MONOLITHIC SILICON《硅单块 三重4-3-3输入或非门 发射极耦合逻辑 数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-87564 REV C-2007 MICROCIRCUIT DIGITAL ECL TRIPLE 4-3-3 INPUT NOR GATE MONOLITHIC SILICON《硅单块 三重4-3-3输入或非门 发射极耦合逻辑 数字微型电路》.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Figure 1, terminal connections, changed to tabular format. Add figure 4. Technical changes to table I. Editorial changes throughout. 89-03-08 M. A. Frye B Changes in accordance with NOR 5962-R045-92. 91-12-05 Monica L. Poelking C Redrawn with cha

2、nges. Update drawing to current requirements. Editorial changes throughout. - gap 07-06-05 Robert M. Heber The original first sheet of this drawing has been replaced. REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Larry T

3、. Gauder DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Wm. J. Johnson COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ECL, TRIPLE 4-3-3 AND AGENCIES OF THE DEPARTMENT OF

4、 DEFENSE DRAWING APPROVAL DATE 87-07-24 INPUT NOR GATE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-87564 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E218-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

5、UIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, append

6、ix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-87564 01 E X Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Gen

7、eric number Circuit function 01 10H506 Triple 4-3-3 input NOR gate 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 dual-in-line F GDFP2-F16 or CDFP3-F16 16 flat pack

8、 2 CQCC1-N20 20 leadless square chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage range -8.0 V dc minimum to 0.0 V dc maximum Input voltage range . -5.2 V dc to 0.0 V dc Storage temperature range . -65C to +165C

9、 Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +165C Maximum power dissipation (PD) 150 mW Thermal resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range (VEE) . -5.46 V minimum to -4.94 V maximum Supply voltage range

10、(VCC) . -0.02 V dc to +0.02V dc or 1.98 V dc to 2.02 V dc Ambient operating temperature range (TA) . -55C to +125C Minimum high level input voltage (VIH): TA= +25C -0.780 V dc TA= +125C -0.650 V dc TA= -55C . -0.840 V dc Maximum low level input voltage (VIL) . -1.950 V dc Provided by IHSNot for Resa

11、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbook

12、s. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Man

13、ufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standar

14、d Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a c

15、onflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item

16、 requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transiti

17、onal certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements

18、 herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction,

19、 and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on fi

20、gure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance c

21、haracteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II

22、. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC

23、FORM 2234 APR 97 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitat

24、ions, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“

25、certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate o

26、f compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, a

27、ppendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option

28、 to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.

29、2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit

30、 shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

31、 method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction o

32、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TA +125C unl

33、ess otherwise specified Group A subgroups Min Max Unit Cases E, F, and 2 Quiescent conditions 1/ VIHVIL-0.780 -1.950 1 -1.010 -0.780 -0.650 -1.950 2 -0.860 -0.650 High level output voltage VOH-0.840 -1.950 3 -1.060 -0.840 V -0.780 -1.950 1 -1.950 -1.580 -0.650 -1.950 2 -1.950 -1.565 Low level output

34、 voltage VOL-0.840 -1.950 3 -1.950 -1.610 V -1.110 -1.480 1 -1.010 -0.780 -0.960 -1.465 2 -0.860 -0.650 High level threshold output voltage VOHA-1.160 -1.510 3 -1.060 -0.840 V -1.110 -1.480 1 -1.950 -1.580 -0.960 -1.465 2 -1.950 -1.565 Low level threshold output voltage VOLAOutputs terminated throug

35、h 100 to -2.0 V VCC= 0.0 V VEE= -5.2 V 2/ -1.160 -1.510 3 -1.950 -1.610 V 1 -20 Power supply drain 3/ current IEE2, 3 -23 mA 1 310 High level input current IIHVEE= -5.46 V VCC= 0.0 V VIH= -0.780 V at +25C -0.650 V at +125C -0.840 V at -55C 2, 3 500 A 1, 3 0.5 Low level input current IILVEE= -4.94 V

36、3/ VIL= -1.950 V VCC= 0.0 V 2 0.3 A Functional tests See 4.3.1c 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-39

37、90 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Min Max Unit Cases E and F DC rapid test conditions 4/ VIHVIL-0.786 -1.950 1 -1.016 -0.786 -0.657 -1

38、.950 2 -0.866 -0.657 High level output voltage VOH-0.847 -1.950 3 -1.066 -0.847 V -0.786 -1.950 1 -1.950 -1.582 -0.657 -1.950 2 -1.950 -1.567 Low level output voltage VOL-0.847 -1.950 3 -1.950 -1.612 V -1.116 -1.482 1 -1.016 -0.786 -0.966 -1.467 2 -0.866 -0.657 High level threshold output voltage VO

39、HA-1.166 -1.512 3 -1.066 -0.847 V -1.116 -1.482 1 -1.950 -1.582 -0.966 -1.467 2 -1.950 -1.567 Low level threshold output voltage VOLAOutputs terminated through 100 to -2.0 V VCC= 0.0 V VEE= -5.2 V 2/ -1.166 -1.512 3 -1.950 -1.612 V 1 -20 Power supply drain 3/ current IEE2, 3 -22 mA 1 295 High level

40、input current IIHVEE= -5.46 V VCC= 0.0 V VIH= -0.786 V at +25C -0.657 V at +125C -0.847 V at -55C 2, 3 485 A 1, 3 0.5 Low level input current IILVEE= -4.94 V 3/ VIL= -1.950 VCC= 0.0 V 2 0.3 A Functional tests See 4.3.1c 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction

41、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions -55

42、C TA +125C unless otherwise specified Group A subgroups Min Max Unit Case 2 DC rapid test conditions 4/ VIHVIL-0.789 -1.950 1 -1.019 -0.789 -0.660 -1.950 2 -0.869 -0.660 High level output voltage VOH-0.850 -1.950 3 -1.069 -0.850 V -0.789 -1.950 1 -1.950 -1.583 -0.660 -1.950 2 -1.950 -1.568 Low level

43、 output voltage VOL-0.850 -1.950 3 -1.950 -1.613 V -1.119 -1.483 1 -1.019 -0.789 -0.969 -1.468 2 -0.869 -0.660 High level threshold output voltage VOHA-1.169 -1.513 3 -1.069 -0.850 V -1.119 -1.483 1 -1.950 -1.583 -0.969 -1.468 2 -1.950 -1.568 Low level threshold output voltage VOLAOutputs terminated

44、 through 100 to -2.0 V VCC= 0.0 V VEE= -5.2 V 2/ -1.169 -1.513 3 -1.950 -1.613 V 1 -20 Power supply drain 3/ current IEE2, 3 -22 mA 1 295 High level input current IIHVEE= -5.46 V VCC= 0.0 V VIH= -0.789 V at +25C -0.660 V at +125C -0.850 V at -55C 2, 3 485 A 1, 3 0.5 Low level input current IILVEE= -

45、4.94 V 3/ VCB= -1.950 V VCC= 0.0 V 2 0.3 A Functional tests See 4.3.1c 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87564 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4

46、3218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Min Max Unit Cases E, F, and 2 AC test conditions 9 0.50 1.80 10 0.55 1.90 Transition time tT

47、LH, tTHL11 0.50 1.70 ns 9 0.50 1.75 10 0.55 1.80 Propagation delay time, any input to any output tPHH, tPLL, tPHL, tPLHVEE= -2.94 V VCC= 2.0 V CL 5 pF Load all outputs through 100 to ground 11 0.50 1.70 ns 1/ The quiescent limits are determined after a device has reached thermal equilibrium. This is

48、 defined as the reading taken with the device in a socket with 500 LFPM of +25C, +125C or -55C (as applicable) air blowing on the unit in a transverse direction with power applied for at least 4 minutes before the reading is taken. This method was used for theoretical limit establishment only. All devices shall be tested to the delta V (rapid test) conditions specified herein. The rapid test method is an equivalent method of testing quiescent conditions. 2/ The high and low level output current varies wi