DLA SMD-5962-85126 REV C-2005 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL BUFFERS MONOLITHIC SILICON《硅单块 缓冲器低频率肖脱基晶体管-晶体管逻辑电路 双极数字微型电路》.pdf
《DLA SMD-5962-85126 REV C-2005 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL BUFFERS MONOLITHIC SILICON《硅单块 缓冲器低频率肖脱基晶体管-晶体管逻辑电路 双极数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-85126 REV C-2005 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL BUFFERS MONOLITHIC SILICON《硅单块 缓冲器低频率肖脱基晶体管-晶体管逻辑电路 双极数字微型电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Delete CAGE 01295 from 8512601BX. Add CAGE 04713 to approved source list. Delete VOHtest; add to recommended operating conditions. Change tPLH(10, 11) in table I. Table I, prop. delays, add “A or B to Y“. Prop. delay: Change RL. Revise to militar
2、y drawing format. Delete IOLtest in table I. 87-12-31 M. A. Frye B Add device type 02. Add figure 3: Test circuit and switching waveforms. Update the boilerplate. 92-09-11 M. L. Poelking C Update to current requirements. Editorial changes throughout. - gap 05-12-15 Raymond Monnin CURRENT CAGE CODE 6
3、7268 THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY Monica L. Grosel DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Robert P. Evans COLUMBUS, OHIO 43218-3990
4、 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, BUFFERS, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 85-10-03 MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE
5、CODE 14933 85126 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E070-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85126 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 22
6、34 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 85126 01 B X Drawing numb
7、er Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54LS33 Quadruple two-input positive NOR buffers with open collector outputs 02 54LS28 Quadruple t
8、wo-input positive NOR buffers 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style B GDFP4-F14 14 flat pack C GDIP1-T dual-in-line D GDFP1-F14 14 flat pack 2 CQCC1-N20 20 square chip carrier 1.2.3 L
9、ead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage range -0.5 V dc to +7.0 V dc Input voltage range . -1.5 V dc at -18 mA to +7.0 V dc Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Junction
10、 temperature (TJ) . +175C Maximum power dissipation (PD) per device 1/ . 75.9 mW Thermal resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range (VCC) . 4.5 V dc minimum to 5.5 V dc maximum Maximum high level output voltage (VOH) (type 01) 5.5 V
11、dc Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) 0.7 V dc Maximum high level output current (IOH) (type 02) . -1.2 mA Maximum low level output current (IOL) 12 mA Case operating temperature range (TC) . -55C to +125C _ 1/ Must withstand the added PDdue to sh
12、ort circuit test; e.g., IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85126 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.
13、1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specif
14、ications and Standards (DoDISS) and supplement thereto, cited in the solicitation. 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these
15、 documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electroni
16、c Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil or from the Standardizatio
17、n Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applica
18、ble laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produ
19、ced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accorda
20、nce with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certi
21、fication mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline(s). The case
22、 outline(s) shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2. 3.2.4 Test circuits and switching waveforms. The test circuits and switching wavef
23、orms shall be as specified on figure 3. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electric
24、al test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85126 DEFENSE SUPPLY CENTER COLUM
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