DLA SMD-5962-09220 REV A-2011 MICROCIRCUIT LINEAR DIFFERENTIAL ANALOG-TO-DIGITAL CONVERTER DRIVER LOW DISTORTION MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02 tested at low dose rate. Make change to paragraphs 1.2.2, 1.5, and 4.4.4.1. Make changes to footnotes 1/ and 2/ under Table I. rrp 11-07-20 C. SAFFLE REV SHEET REV A A SHEET 15 16 REV STATUS REV A A A A A A A A A A A A A A OF S

2、HEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY

3、Rajesh Pithadia APPROVED BY Charles F. Saffle MICROCIRCUIT, LINEAR, DIFFERENTIAL ANALOG-TO-DIGITAL CONVERTER DRIVER, LOW DISTORTION,MONOLITHIC SILICON DRAWING APPROVAL DATE 10-04-28 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-09220 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E446-11 Provided

4、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance cla

5、ss levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is refl

6、ected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 09220 01 V H A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designato

7、r. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indica

8、tes a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 AD8138 Low distortion, differential analog-to-digital converter driver amplifier 02 AD8138 Low distortion, differential analog-to-digital converter

9、driver amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcirc

10、uits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style H GDFP1-F10 10 Flat pack 1.2.5 Lead fin

11、ish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME CO

12、LUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply Voltage (+VSto VS) . 11 V VOCM Vs IN (input range) . -VS+ 0.3 V min to +VS 1.6 V max Internal Power Dissipation 550 mW 2/ Storage temperature range . -65C to +150C Operating temperature ran

13、ge -55C to +125C Lead temperature range (soldering, 10 sec) . +300C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) 50C/W Thermal resistance, junction-to-ambient (JA) . 244C/W 1.4 Recommended operating conditions. Supply voltage (VS+/VS-) 2.5 V ( or +5V, 0V Single Supply) t

14、o 5 V Dual Supply Ambient operating temperature range (TA) -55C to +125C 1.5 Operating Performance characteristics. 3/ Input/Output characteristics (TA= 25C, VS= 5 V, VOCM = 0, G = +1, RL,dm = 500 ): Output voltage swing (maximum VOUT,single-ended output) 7.75 VP-POutput current 95 mA Input common-m

15、ode voltage range (DINto OUT ) . -4.7 V to +3.4 V Input voltage range (VOCMto OUT) . 3.8 V DINto OUT parameters (TA= 25C, VS= 5 V, VOCM = 0, G = +1, RL,dm = 500 ): Dynamic performance: -3 dB small signal bandwidth (VOUT= 0.5 VP-P, CF= 0 pF) . 320 MHz -3 dB small signal bandwidth (VOUT= 0.5 VP-P, CF=

16、 1 pF) . 225 MHz Bandwidth for 0.1 dB flatness (VOUT= 0.5 VP-P, CF= 0 pF) . 30 MHz Large signal bandwidth (VOUT= 2 VP-P, CF= 0 pF) 265 MHz Slew rate (VOUT= 2 VP-P, CF= 0 pF) . 1150 V/s Noise/Harmonic performance: 4/ Second harmonic (VOUT= 2 VP-P, 5 MHz, RL,dm= 800 ) -94 dBc Second harmonic (VOUT= 2

17、VP-P, 20 MHz, RL,dm= 800 ) -87 dBc Second harmonic (VOUT= 2 VP-P, 70 MHz, RL,dm= 800 ) -62 dBc Third harmonic (VOUT= 2 VP-P, 5 MHz, RL,dm= 800 ) -114 dBc Third harmonic (VOUT= 2 VP-P, 20 MHz, RL,dm= 800 ) -85 dBc Third harmonic (VOUT= 2 VP-P, 70 MHz, RL,dm= 800 ) . -57 dBc Voltage noise (RTI, f = 10

18、0 kHz to 40 MHz) . 5 nV/ VOCMto OUT parameters (TA= 25C, VS= 5 V, VOCM = 0, G = +1, RL,dm = 500 ): Dynamic/Noise performance: -3 dB small signal bandwidth . 250 MHz Slew rate . 330 V/s Voltage noise (RTI, f = 100 kHz to 100 MHz) 17 nV/ _ 1/ Stresses above the absolute maximum rating may cause perman

19、ent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ In product application, additional power dissipation created by output load current must not allow internal power dissipation absolute maximum to be exceeded. 3/ Refer to section 6.7

20、 for further information. 4/ Harmonic distortion performance is equal or slightly worse with higher values of RL,dm.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME COLUMBUS, OHIO 4

21、3218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features: Device type 01: Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads (Si) 5/ Device type 02: Maximum total dose available (dose rate 10 mrads(Si)/s) 50 krads (Si) 6/ 2. APPLICABLE DOCUMENTS 2.1 Gover

22、nment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICAT

23、ION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard M

24、icrocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In

25、the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The

26、 individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The ind

27、ividual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 an

28、d herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections and block diagram. The terminal connections and block diagram shall be as specified on figur

29、e 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. _ 5/ Device type 01 may be dose rate sensitive in a space environment

30、and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 6/ For device type 02, radiation end point limits for the noted parameters are guaranteed for the cond

31、itions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97

32、TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Single supply 3/ DINto OUT Offset voltage VOS,dmVOS,dm= VOUT,dm/ 2, VDIN+= VDIN-= VOCM= 0 V 1 01, 02 -2.5 +2.5 mV 2, 3 -5 +5 M,D,P,

33、L,R 1 01 -2.5 +2.5 M,D,P,L 1 02 -2.5 +2.5 Input bias current IB1 01, 02 7 A 2,3 10 M,D,P,L,R 1 01 7 M,D,P,L 1 02 7 Common-mode rejection CMRR VOUT,dm/ VIN,cm, VIN,cm= 1 V 1 01, 02 0.316 mV/V 2, 3 0.625 M,D,P,L,R 1 01 0.316 M,D,P,L 1 02 0.316 VOCM to OUT Input offset voltage 4/ VOS,cmVOS,cm= VOUT,cm,

34、 VDIN+= VDIN-= VOCM= 0 V 1 01, 02 -5 +5 mV 2, 3 -10 +10 M,D,P,L,R 1 01 -5 +5 M,D,P,L 1 02 -5 +5 Gain Gain, cmVOUT,cm/ VOCM, VOCM= 2.5 V 1 V 1 01, 02 -3.2 +3.2 mV/V 2, 3 -4.5 +4.5 M,D,P,L,R 1 01 -3.2 +3.2 M,D,P,L 1 02 -3.2 +3.2 Supply current IS1 01, 02 21 mA 2, 3 24 M,D,P,L,R 1 01 21 M,D,P,L 1 02 21

35、 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical perform

36、ance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Single supply 3/ VOCM to OUT Power supply rejection ratio PSRR VOUT,dm/ VS, VS= 1 V 1 01, 02 0.316 mV/V 2, 3 0.625 M,D,P,L,R 1 01 0.316 M,D,P,L 1 02

37、 0.316 Dual supply 3/ DINto OUT Offset voltage VOS,dmVOS,dm= VOUT,dm/ 2, VDIN+= VDIN-= VOCM= 0 V 1 01, 02 -2.5 +2.5 mV 2, 3 -5 +5 M,D,P,L,R 1 01 -2.5 +2.5 M,D,P,L 1 02 -2.5 +2.5 Input bias current IB1 01, 02 7 A 2,3 10 M,D,P,L,R 1 01 7 M,D,P,L 1 02 7 Common-mode rejection CMRR VOUT,dm/ VIN,cm, VIN,c

38、m= 1 V 1 01, 02 0.316 mV/V 2, 3 0.625 M,D,P,L,R 1 01 0.316 M,D,P,L 1 02 0.316 VOCMto OUT Input offset voltage 4/ VOS,cmVOS,cm= VOUT,cm, VDIN+= VDIN-= VOCM= 0 V 1 01, 02 -3.5 +3.5 mV 2, 3 -10 +10 M,D,P,L,R 1 01 -3.5 +3.5 M,D,P,L 1 02 -3.5 +3.5 Gain Gain, cmVOUT,cm/ VOCM, VOCM= 2.5 V 1 V 1 01, 02 -4.5

39、 +4.5 mV/V 2, 3 -5.8 +5.8 M,D,P,L,R 1 01 -4.5 +4.5 M,D,P,L 1 02 -4.5 +4.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R

40、EVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Dual supply 3/ VOCMto OUT Supply current IS1 01, 02 23 mA 2, 3 27 M,D,P,L,R 1 01 23 M

41、,D,P,L 1 02 23 Power supply rejection ratio PSRR VOUT,dm/ VS, VS= 1 V 1 01, 02 0.316 mV/V 2, 3 0.625 M,D,P,L,R 1 01 0.316 M,D,P,L 1 02 0.316 1/ Device type 01 supplied to this drawing has been characterized through all levels M, D, P, L, R of irradiation. Device type 02 supplied to this drawing has

42、been characterized through all levels P and L of irradiation. However, device type 01 is only tested at the “R” level and device type 02 is only tested at the “L” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical m

43、easurements for any RHA level, TA= +25C. 2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition

44、 A for device type 01. Device type 02 has been tested at low dose rate. 3/ For single supply,VS= 5 V/0V, VOCM= 2.5 V, G = +1, RL,dm= 500 , unless otherwise specified. For dual supply, VS= 5 V, VOCM= 0 V, G = +1, RL,dm= 500 , unless otherwise specified. All specifications refer to single-ended input

45、and differential output, unless otherwise specified. Refer to section 6.7 for further information. 4/ VOS,cmspecifications assume the VOCMinput pin is driven by a low impedance voltage source. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

46、MICROCIRCUIT DRAWING SIZE A 5962-09220 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and pos

47、tirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I

48、. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still