DLA SMD-5962-01520 REV B-2003 MICROCIRCUIT LINEAR HIGH CURRENT FET DRIVER MONOLITHIC SILICON《单片硅线性微电路高电流场效应管驱动器》.pdf
《DLA SMD-5962-01520 REV B-2003 MICROCIRCUIT LINEAR HIGH CURRENT FET DRIVER MONOLITHIC SILICON《单片硅线性微电路高电流场效应管驱动器》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-01520 REV B-2003 MICROCIRCUIT LINEAR HIGH CURRENT FET DRIVER MONOLITHIC SILICON《单片硅线性微电路高电流场效应管驱动器》.pdf(12页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to supply voltage range as specified in paragraph 1.4. - ro 02-10-21 R. MONNIN B Add case outline X. Make changes to 1.2.4, 1.3, figure 1, figure 2, and figure 3 - ro 03-04-04 R. MONNIN REV SHET REV SHET REV STATUS REV B B B B B B B B
2、 B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY L.G. Traylor DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raj Pithadia COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCU
3、IT, LINEAR, HIGH CURRENT FET DRIVER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 01-10-18 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-01520 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E330-03 DISTRIBUTION STATEMENT A. Approved for public release; distrib
4、ution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01520 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawin
5、g documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Ha
6、rdness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 01520 01 Q P X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3
7、) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropr
8、iate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 UC1710 High current FET driver 1.2.3 Device class designator. The device class designator is a single letter i
9、dentifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-
10、PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter 1/ Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MI
11、L-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ See figure 1 terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01520 DEFENSE SUPPLY CENTER COLU
12、MBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage (VIN) . 20 V dc Collector supply voltage (VC) . 20 V dc Operating voltage . 18 V dc Output current (source or sink) steady-state 500 mA Digital inputs . -0.3 V - VINPower
13、dissipation at TA= +25C: Cases P and X . 1 W Power dissipation at TC= +25C: Cases P and X 2 W Operating junction temperature -55C to +150C Storage temperature range -65C to 150C Lead temperature (soldering, 10 seconds) 300C Thermal resistance, junction-to-case (JC) : Cases P and X 26C/W Thermal resi
14、stance, junction-to-ambient (JA) : Cases P and X. 26C/W 1.4 Recommended operating conditions. Supply voltage (VCC) . 4.7 V to 18 V Ambient temperature range (TA). -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and
15、 handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION
16、DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 2/ Stresses above the absolute maximum rating
17、 may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ All currents are positive into, negative out of the specified terminal. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
18、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01520 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless o
19、therwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references
20、 cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accord
21、ance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MI
22、L-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein
23、 for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Block. The block diagram shall be as
24、 specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temp
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