DLA SMD-5962-01517 REV C-2006 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 3 3 V 32K X 8-BIT PROM MONOLITHIC SILICON《单片硅辐射硬化数字存储器微电路CMOS 3 3V 32K X 8-BIT PROM》.pdf

《DLA SMD-5962-01517 REV C-2006 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 3 3 V 32K X 8-BIT PROM MONOLITHIC SILICON《单片硅辐射硬化数字存储器微电路CMOS 3 3V 32K X 8-BIT PROM》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-01517 REV C-2006 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 3 3 V 32K X 8-BIT PROM MONOLITHIC SILICON《单片硅辐射硬化数字存储器微电路CMOS 3 3V 32K X 8-BIT PROM》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device types 02 and 03. Figures 1 and 4 corrected. Updated boilerplate. ksr 04-05-25 Raymond Monnin B Updated ILIin Table I for devices 02 and 03 changing the value from 15 A to 35 A. Updated boilerplate. ksr 05-06-17 Raymond Monnin C Added

2、 device types 04 and 05; edited Table I and figures where appropriate for new devices. Updated boilerplate. ksr 06-06-06 Raymond Monnin REV SHET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFE

3、NSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raj Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 01 - 05 - 15 MICROCIRCUIT,

4、 MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 3.3 V, 32K X 8-BIT PROM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-01517 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E479-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

5、ARD MICROCIRCUIT DRAWING SIZE A 5962-01517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicati

6、on (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 0151

7、7 01 Q X C | | | | | | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet

8、the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The de

9、vice type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 28F256LVC 3.3 V 32K X 8-bit Radiation hardened PROM 65 ns 02 28F256LVQL 3.3 V 32K X 8-bit Radiation hardened PROM 65 ns 03 28F256LVQL 3.3 V 32K X 8-bit Radiation hardened PROM 65 ns (

10、with extended industrial temperature) 04 28F256LVQLE 3.3 V 32K X 8-bit Radiation hardened PROM 65 ns 05 28F256LVQLE 3.3 V 32K X 8-bit Radiation hardened PROM 65 ns (with extended industrial temperature) 1.2.3 Device class designator. The device class designator is a single letter identifying the pro

11、duct assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Ca

12、se outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Y CDIP2-T28 28 Dual-in-line package X CDFP3-F28 28 Flat Pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and

13、 V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103 (see 6.6.2 herein). Provided by IHSNot for ResaleNo reproduction or networ

14、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage range device 01 -0.3 V dc to +7.0 V dc devices 02, 03, 0

15、4, and 05 .-0.5 V dc to +6.0 V dc Voltage on any pin with respect to ground .-0.5 V dc to VDD+0.5 V dc Maximum power dissipation (PD) .1.5 W Lead temperature (soldering, 10 seconds maximum) +260C Thermal resistance, junction-to-case (JC) .See MIL-STD-1835 Junction temperature (TJ).+175C Storage temp

16、erature range -65C to +150C Temperature under bias devices 01, 02, and 04-55C to +125C devices 03 and 05 -40C to +125C 1.4 Recommended operating conditions. Supply voltage (VDD) +3.0 V dc to +3.6 V dc Ground voltage (GND) .0.0 V dc Input high voltage (VIH).0.7 VDDminimum to VDDInput Low voltage (VIL

17、) .0.0 V dc to +0.25 VDDmaximum Case operating temperature range (TC): devices 01, 02, and 04 .-55C to +125C devices 03 and 05 -40C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50-300 rad/s): devices 01, 02, and 04 1.0 MRads(Si) devices 03 and 05 300 Krads(Si) Single ev

18、ent phenomenon (SEP): effective linear energy threshold (LET); with no upsets(device 01) . 128 MEV-cm2/mg with no upsets(devices 02, 03, 04, and 05). 40 MEV-cm2/mg with no latchup (devices 02, 03, 04, and 05). 110 MEV-cm2/mg Neutron irradiation 1 x 1014neutrons/cm23/ 2. APPLICABLE DOCUMENTS 2.1 Gove

19、rnment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICA

20、TION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard

21、Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2/ Str

22、esses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Guaranteed, but not tested Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S

23、TANDARD MICROCIRCUIT DRAWING SIZE A 5962-01517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, t

24、he issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications

25、 should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries As

26、sociation, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational s

27、ervices.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. R

28、EQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or

29、 function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions sha

30、ll be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on fig

31、ure 1. 3.2.3 Truth table(s). 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 2. When required in screening (see 4.2 herein) or conformance inspection, groups A, B, or C (see 4.4), the devices shall

32、 be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed or at least 25 percent of the total number of cells to any altered item drawing 3.2.3.2 Programmed devices. The truth table or test vectors for programmed devices shall be as sp

33、ecified by an attached altered item drawing. 3.2.4 Switching test circuit and waveforms. The switching test circuit and waveforms diagram shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 5. 3.3 Electrical performance

34、characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reprodu

35、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups

36、 specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space

37、 limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MI

38、L-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For dev

39、ice classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approve

40、d source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or f

41、or device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delive

42、red to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For d

43、evice class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Devi

44、ce class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing options. Since the device is capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations; two processing options a

45、re provided for selection in the contract, using an altered item drawing. 3.11.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 4.4.1 and table IIA. It is recommended that users perform subgroups 7 and 9 after programming to verify the

46、specific program configuration. 3.11.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 4. VERIFICATION 4.1 Samplin

47、g and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For dev

48、ice class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in