DLA SMD-5962-00538 REV K-2011 MICROCIRCUIT LINEAR CMOS RADIATION HARDENED POWER-ON MICROPROCESSOR RESET CIRCUIT MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change the RHA designator from F to R for device classes M, Q, and V. - ro 01-07-20 R. MONNIN B Add information to paragraph 3.5. - ro 04-03-22 R. MONNIN C Make a correction to terminal symbol MR description as specified under FIGURE 2. - ro 04-0

2、9-08 R. MONNIN D Make correction to VPFOtest description as specified under Table I. - ro 06-02-14 R. MONNIN E Make a change to the GND pin as specified under Figure 3. - ro 07-06-22 R. HEBER F Make corrections to the VCCand RESET pin descriptions as specified under figure 2. - ro 08-08-19 R. HEBER

3、G Add figure 4 for a block diagram and figure 5 for two timing waveforms. - ro 09-05-18 J. RODENBECK H Make a correction to figure A-1 substrate material from dielectric isolation (DI) to junction isolation (JI). - ro 10-03-09 C. SAFFLE J Correct title. Table I, watchdog input (WDI) pulse width test

4、, make correction to condition column by deleting VIH= 0.8 V and substituting VIH= 0.8 x VCC. Add Table IB, paragraphs 2.2, 4.4.4.3h, and 6.7. Add footnote to Table IIB. - ro 10-08-18 C. SAFFLE K Under figure 1, case outline X, add the “Q” maximum dimensions 0.045 inch and 1.14 mm. - ro 11-01-25 C.

5、SAFFLE REV SHET REV K K K K K K K K K K SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWI

6、NG THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, CMOS, RADIATION HARDENED, POWER-ON, MICROPROCESSOR RESET CIRCUIT, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-09-27 AMSC N/A R

7、EVISION LEVEL K SIZE A CAGE CODE 67268 5962-00538 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E190-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISIO

8、N LEVEL K SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of cas

9、e outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as

10、part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 00538 01 T X C Federal stock class designator RHAdesignator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Le

11、adfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA le

12、vels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 IS-705RH Radiation hardened, power-on microprocessor reset circuit 1.2.3 D

13、evice class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with

14、MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835

15、and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or

16、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) . 0.3 V to 6.0 V All other inputs -0.3 V to (VC

17、C+ 0.3 V) Power dissipation (PD) . 2.5 W Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) +175C Storage temperature range -65C to +150C Thermal resistance, junction-to-case (JC) 5C/W Thermal resistance, junction-to-ambient (JA) . 60C/W 1.4 Recommended operating conditions.

18、Supply voltage range (VCC) . 4.75 V to 5.5 V Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device classes Q, T, and V 1 X 105krads (Si) Single event latch-up (SEL) to effective LET 90 MeV/mg/cm22/ 2. APPLI

19、CABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTM

20、ENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK

21、-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1

22、/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Guaranteed by design or process but not tested. See manufacturers SEE test report for more information. Provided by IHSNo

23、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of th

24、is document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Io

25、n Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and

26、 the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V

27、shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in

28、accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions

29、 shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as sp

30、ecified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 3. 3.2.4 Block diagram. The block diagram shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.3 Electrical performanc

31、e characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements.

32、 The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking

33、of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-3853

34、5. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MI

35、L-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall b

36、e required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product

37、meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5

38、962-00538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 5 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Operating supply voltage VCC1

39、,2,3 01 1.2 5.5 V Supply current ICCVCC= 5.5 V 1,2,3 01 500 A M,D,P,L,R 2/ 1 500 Reset section Reset threshold voltage Vrt1,2,3 01 4.50 4.75 V M,D,P,L,R 2/ 1 4.50 4.75 Reset threshold voltage hysteresis VRTHYS1,2,3 01 20 mV M,D,P,L,R 2/ 1 20 Reset pulse width TrsVCC= 4.75 V 9,10,11 01 140 280 ms M,D

40、,P,L,R 2/ 9 140 280 RESET output voltage VOUTVCC= 4.75 V, ISOURCE= 800 A 1,2,3 01 VS 1.5 V M,D,P,L,R 2/ 1 VS 1.5 VCC= 4.75 V, ISINK= 3.2 mA 1,2,3 0.4 M,D,P,L,R 2/ 1 0.4 VCC= 1.2 V, IOL= 100 A 1,2,3 0.3 M,D,P,L,R 2/ 1 0.3 Watchdog section Watchdog time-out period tWDVCC= 5.5 V 9,10,11 01 1.00 2.25 s

41、M,D,P,L,R 2/ 1.00 2.25 Watchdog input (WDI) pulse width tWPVCC= 4.75 V, VIL= 0.4 V, VIH= 0.8 x VCC9,10,11 01 50 ns M,D,P,L,R 2/ 50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596

42、2-00538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Watchdog section - co

43、ntinued Watchdog input (WDI) threshold voltage VILVCC= 4.75 V 1,2,3 01 0.8 V M,D,P,L,R 2/ 1 0.8 VIHVCC= 5.5 V 1,2,3 3.5 M,D,P,L,R 2/ 1 3.5 Watchdog input (WDI) current IWDIWDI pin = VCC= 5.5 V 1,2,3 01 100 A M,D,P,L,R 2/ 1 100 WDI pin = 0 V, VCC= 5.5 V 1,2,3 -100 M,D,P,L,R 2/ 1 -100 Watchdog output

44、WDO voltage VWDOVCC= 4.75 V, IOH= 800 A 1,2,3 01 VS 1.5 V M,D,P,L,R 2/ 1 VS 1.5 VCC= 4.75 V, IOL= 1.2 mA 1,2,3 0.4 M,D,P,L,R 2/ 1 0.4 Manual reset section Manual reset ( MR ) pull-up current IMRMR = 0 V, VCC= 5.5 V 1,2,3 01 -500 -100 A M,D,P,L,R 2/ 1 -500 -100 Manual reset ( MR ) pulse width tMRVCC

45、= 4.75 V 9,10,11 01 150 ns M,D,P,L,R 2/ 9 150 Manual reset ( MR ) input threshold voltage VILVCC= 4.75 V 1,2,3 01 0.8 V M,D,P,L,R 2/ 1 0.8 VIHVCC= 5.5 V 1,2,3 2.0 M,D,P,L,R 2/ 1 2.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

46、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00538 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups De

47、vice type Limits Unit Min Max Manual reset section continued. Manual reset ( MR ) to reset out delay tMDVCC= 4.75 V 9,10,11 01 100 ns M,D,P,L,R 2/ 9 100 Threshold detector section Threshold detector input (PFI) threshold voltage VPFIVCC= 5.0 V 1,2,3 01 1.20 1.30 V M,D,P,L,R 2/ 1 1.20 1.30 Threshold

48、detector input (PFI) current IPFIVCC= 5.0 V 1,2,3 01 -25.0 +25.0 nA M,D,P,L,R 2/ 1 -25.0 +25.0 Threshold detector output ( PFO ) voltage VPFOVCC= 4.75 V, IOH= 800 A 1,2,3 01 VS 1.5 V M,D,P,L,R 2/ 1 VS 1.5 VCC= 4.75 V, IOL= 3.2 mA 1,2,3 0.4 M,D,P,L,R 2/ 1 0.4 1/ Unless otherwise specified, VCC= 4.75 V to 5.5 V. 2/ Device classes Q, T, and V supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation however, this device is only tested at the R level. Pre and Post irradiation values are identical unless oth