DLA MIL-PRF-19500 621 C-2008 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON HIGH-POWER TYPE 2N7369 JAN JANTX JANTXV AND JANS.pdf

《DLA MIL-PRF-19500 621 C-2008 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON HIGH-POWER TYPE 2N7369 JAN JANTX JANTXV AND JANS.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 621 C-2008 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON HIGH-POWER TYPE 2N7369 JAN JANTX JANTXV AND JANS.pdf（17页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/621C 11 December 2008 SUPERSEDING MIL-PRF-19500/621B 7 November 2003 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department

2、 of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistor. Four levels of product assurance are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254). 1.3 Maximum ratings. Unless otherwise specified

3、, TA= +25C. Type PT(1) TC= +25C VCBOVCEOVEBOIBICTJand TSTGRJC (2) 2N7369 W 115 V dc 80 V dc 80 V dc 7.0 A dc 4.0 A dc 10 C -65 to +200 C/W 1.5 (1) See figure 2 for temperature-power derating curves. (2) See figure 3, transient thermal impedance graph. 1.4 Primary electrical characteristics. Unless o

4、therwise specified, TA= +25C. hFE2(1) VBE(SAT)1(1) VCE(SAT)1(1) Cobo|hfe| Type VCE= 2.0 V dc IC= 3.0 A dc IC= 5.0 A dc IB= 0.5 A dc IC= 5.0 A dc IB= 0.5 A dc VCB= 10 V dc IE= 0 f = 100 kHz to 1 MHz VCE = 10 V dc VC= 0.5 A dc f = 1 MHz Min Max 30 140 V dc 1.5 V dc 1.0 pF 500 4.0 20 (1) Pulsed (see 4.

5、5.1). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil. Since contact information can change, you may want to ver

6、ify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil The documentation and process conversion measures necessary to comply with this document shall be completed by 11 March 2009. Provided by IHSNot for ResaleNo reproduction or networking permitte

7、d without license from IHS-,-,-MIL-PRF-19500/621C 2NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Dimensions and configuration

8、(TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW

9、 .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 32. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of t

10、his specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified

11、requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein

12、. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (C

13、opies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contr

14、act, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The

15、 individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see

16、 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-254AA). Meth

17、ods used for electrical isolation of the terminal feed-throughs shall employ materials that contain a minimum of 90 percent ceramic AL2O3or equivalent. Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. * 3.4.1 Lead finish. Lead finish shall be solder

18、able in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance wit

19、h table E-IV, screen 14, of MIL-PRF-19500. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 43.6 Electrical performance characteristics. Unless otherwise specified here

20、in, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be

21、 uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) * c.

22、 Conformance inspection (see 4.4 and tables I and II.). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded t

23、o a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screenin

24、g shall be in accordance with MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV

25、 levels 3c (1) Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICES1and hFE2Not applicable 11 Subgroup 2 of table herein; ICES1and hFE2; ICES1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2 = 20 percent of initial value. ICES1and hFE212 See 4.3.1 See 4.3.1 13 Subgr

26、oups 2 and 3 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2= 20 percent of initial value. Subgroup 2 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2= 20 percent of initial value.

27、* (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 54.3.1 Power burn-in conditions. Power burn-in condi

28、tions are as follows: TJ= +175C minimum, VCE= 10 -30 V dc, TA= +30 5C. 4.3.2 Thermal impedance (ZJXmeasurements). The ZJXmeasurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD,and VCwhere appropriate. The ZJXl

29、imit used in screen 3c shall comply with the thermal impedance graph on figure 3 (less than or equal to the curve value at the same tHtime) and/or shall be less than the process determined statistical maximum limit as outlined in method 3131.4.4 Conformance inspection. Conformance inspection shall b

30、e in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500, and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the condition

31、s specified for subgroup testing in tables E-VIa and E-VIb of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB 10 V dc, 2,000 cycles. B5 2

32、037 Bond strength, test condition A. B6 3131 See 4.5.2. * 4.4.2.2 Group B inspection table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1037 VCB 10 V dc, 2,000 cycles. B5 3131 See 4.5.2. B6 1032 TA= +200C. * 4.4.3 Group C inspection. Group C inspection shall be cond

33、ucted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Conditions C2 1056 Test condition B. C2 2036 Test condition A, weight = 4.5 kg, t = 10

34、seconds. C6 1037 VCB 10 V dc, 6,000 cycles. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 6* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in tabl

35、e E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditio

36、ns for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shal

37、l be 1.0 A dc. b. Collector to emitter voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be 25C TR 75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum lim

38、it of RJCshall be 1.5C/W. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 7TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgro

39、up 2 Thermal impedance 3131 See 4.3.2 ZJC C/W Collector - emitter breakdown voltage 3011 Bias condition D; IC= 0.2 A dc; pulsed (see. 4.5.1) VCEO(sus) 80 V dc Emitter base cutoff current 3061 Bias condition D; VEB= 7 V dc IEBO 5.0 mA dc Collector - emitter cutoff current 3041 Bias condition A; VBE=

40、1.5 V dc; VCE= 80 V dc ICEX1 20 A dc Collector - emitter cutoff current 3041 Bias condition C; VCE= 70 V dc ICES1 20 A dc Base - emitter saturated voltage 3066 Test condition A; IC= 5 A dc; IB= 0.5 A dc; Pulsed (see 4.5.1) VBE(sat)1 1.5 V dc Collector - emitter saturated voltage 3071 IC= 5 A dc; IB=

41、 0.5 A dc; pulsed (see 4.5.1) VCE(sat)1 1.0 V dc Forward - current transfer ratio 3076 VCE= 2.0 V dc; IC= 1.0 A dc; pulsed (see 4.5.1) hFE1 50 175 Forward - current transfer ratio 3076 VCE= 2.0 V dc; IC= 3.0 A dc; pulsed (see 4.5.1) hFE2 30 140 Subgroup 3 High-temperature operation: TA= +150C Collec

42、tor to emitter cutoff current 3041 Bias condition C; VCE= 70 V dc ICES2 5.0 mA dc Low-temperature operation: TA= -55C Forward-current transfer ratio 3076 VCE= 2.0 V dc; IC= 3.0 A dc; pulsed (see 4.5.1) hFE3 12 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking p

43、ermitted without license from IHS-,-,-MIL-PRF-19500/621C 8* TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Switching parameters Pulse delay time See figure 4 td 0.2 s Pulse rise time See figure 4 tr 1.3 s Pulse storage time

44、See figure 4 ts 1.4 s Pulse fall time See figure 4 tf 1.2 s Magnitude of small-signal short-circuit forward- current transfer ratio 3306 VCE= 10 V dc; IC= 0.5 A dc; f = 1 MHz |hfe| 4.0 20 Open circuit output capacitance 3236 VCB= 10 V dc; IE= 0; f = 100 kHz to 1 MHz Cobo 500 pF Subgroup 5 Safe opera

45、ting area (continuous dc) 3051 TC= +25C; t 1 s1 cycle (see figure 5) Test 1 VCE= 11.5 V dc; IC= 10 A dc Test 2 VCE= 45 V dc; IC= 2.5 A dc Test 3 VCE= 60 V dc; IC= 0.9 A dc Safe operating area (clamped inductive) 3053 TA= +25C; IC= 10 A dc; VCC= 11.5 V dc; (See figures 6 and 7) Clamp voltage = 80 V d

46、c Electrical measurements See table I, subgroup 2 Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF 19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 9* TABLE II. Group E inspection (all quality levels) for qu

47、alification or requalification only. Inspection MIL-STD-750 Qualification Method Conditions conformance inspection Subgroup 1 45 devices c = 0 Temperature cycling 1051 500 cycles Hermetic seal 1071 Electrical measurements See table I, subgroup 2 Subgroup 2 45 devices c = 0 High temperature reverse b

48、ias 1039 Condition A, 1,000 hours Electrical measurements See table I, subgroup 2 Subgroup 3 3 devices c = 0 DPA 2102 Subgroup 4 Thermal impedance curves See table E-IX of MIL-PRF-19500, group E, subgroup 4. sample size N/A Subgroups 5 and 6 Not applicable Subgroup 7 45 devices c = 0 Reverse stability 1033 Condition A for devices 400 V, condition B for devices 400 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/621C 10NOTES: 1. Maximum theoretical derate design curve. This is the true inverse of the