DLA MIL-PRF-19500 620 H-2011 SEMICONDUCTOR DEVICE HERMETIC DIODE SILICON RECTIFIER SCHOTTKY BARRIER TYPES 1N5822 1N5822US 1N6864 1N6864US JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

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1、 MIL-PRF-19500/620H 25 April 2011 SUPERSEDING MIL-PRF-19500/620G 10 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822, 1N5822US, 1N6864, 1N6864US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is appr

2、oved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier

3、 rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die (element evaluation). * 1.2 Physical dimensions. See figures 1 (axial), 2 (US surface mount), and 3 (die) dimensions. Types VRWM (1) (2) IO

4、(1) (2) IFSMTSTGTJ(1) ZJXRJL .375 inch (9.52 mm) Lead length RJEC1N5822, 1N5822US 1N6864, 1N6864US V(pk) 40 80 A dc 3.0 3.0 A(pk) 80 80 C -65 to +150 C -65 to +125 C/W 2.5 2.5 C/W 30 30 C/W 10 10 (1) See figures 4, 5, 6, and 7 for derating curves and for effects of VRon TJ. The maximum TJdepends on

5、the voltage applied. TA= +75C for both axial and Metal Electrode Leadless Face diodes (MELF) (US) on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air, pads for (US) = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm

6、) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included, is measured at IO= 1A. * (2) TA= 55C for both axial and MELF (US) on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59mm) pad; area

7、of each pad = .4 square inch (258.06 square mm). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordla.mil . Since contact information can cha

8、nge, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 July 2011. Provided by IHSNot for ResaleNo reproduct

9、ion or networking permitted without license from IHS-,-,-MIL-PRF-19500/620H 2 1.3 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Types VFM1 IFM= 1.0 A VFM2 IFM= 3.0 A VFM3 IFM= 9.4 A IRMVRM= 40 V dc (1N5822) VRM= 80 V dc (1N6864) pulsed method (see 4.5.1) RJL .375 inch (9.

10、52 mm) Lead length RJECTJ= +25C IRM1TJ= +100C IRM21N5822 1N5822US 1N6864 1N6864US V (pk) .40 .40 .50 .50 V (pk) .50 .50 .70 .70 V (pk) .70 .70 N/A N/A mA .10 .10 .15 .15 mA 12.5 12.5 18.0 18.0 C/W 30 30 C/W 10 10 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified

11、 in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that t

12、hey must meet all specified requirements documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the

13、extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Se

14、miconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise n

15、oted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provi

16、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/620H 3 Dimensions Symbol Inches Millimeters Min Max Min Max BD .115 .145 2.92 3.68 BL .130 .195 3.30 4.95 LD .036 .042 0.91 1.07 LL .900 1.300 22.86 33.02 NOTES: 1. Dimensions are in inches. 2.

17、 Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of 1N5822 and 1N6864. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/620H 4

18、Symbol Dimensions Inches Millimeters Min Max Min Max BD .137 .148 3.48 3.76 BL .200 .225 5.08 5.72 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology

19、. FIGURE 2. Physical dimensions of surface mount family, 1N5822US and 1N6864US. US Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/620H 5 Symbol Dimensions Inches Millimeters Min Max Min Max A .062 .064 1.57 1.63 B .052 .054 1.32 1.37 D

20、esign data Metallization: Top: (Anode) Al Back: (Cathode) Au Al thickness 25,000 minimum. Gold thickness 4,000 minimum. Chip thickness .010 inch (0.254 mm) .002 (.051 mm). FIGURE 3. JANC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

21、from IHS-,-,-MIL-PRF-19500/620H 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qua

22、lifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. I

23、nterface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (axial leads), 2 (surface mount), and 3 (die). 3.4.1 Lead material and finish. Lead material shall be copper clad steel with a minimum of 70 percent copper by weight. Lead finish shall be solderable in accordan

24、ce with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-double plug construction, utilizing a category I

25、or III bond, in accordance with MIL-PRF-19500, except for JANHC and JANKC. 3.4.2.1 Surface mount. The surface mount US version shall be considered structurally identical to the non-surface mount version except for lead attach. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. No color

26、coding shall be permitted for part numbering. * 3.5.1 Marking for surface mount (US) devices. For US version devices only, all marking, except polarity may be omitted from the body. Polarity marking of US devices shall consist as a minimum, a band or three contrasting dots around the periphery of th

27、e cathode. At the option of the manufacturer, US surface mount devices may include laser marking on an end-cap, to include part number and lot date code for all levels. JANS devices which are laser marked shall also include serialization. The prefixes JAN, JANTX, JANTXV, or JANS may be abbreviated a

28、s J, JX, JV, or JS, respectively. (Example: The part number may be reduced to JS5822). All marking, except for serial number and polarity shall appear on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics a

29、re as specified in 1.3 and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect

30、 life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I herein). Provided by IHSNot f

31、or ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/620H 7 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualific

32、ation or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot

33、of this revision to maintain qualification. 4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with MIL-PRF-19500. This testing may be performed in a TO-5 package in lieu of the axial leaded package. 4.3 Screening (JANS, JANTXV, and JANTX levels only). Sc

34、reening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS le

35、vel JANTXV and JANTX level 2 Not required Not required 3b (1) 3c Not applicable Required (see 4.3.3) Not applicable Required (see 4.3.3) 4, 5, and 6 Not applicable Not applicable 8 Required Not required 9 Required IR1and VFM2Not applicable (2) 10 Required 1N5822, TA= +90C; VRWM= 40 V(pk); 1N6864, TA

36、= +80C; VRWM= 80 V(pk); VRWM = half sine wave, f = 60HzRequired 1N5822, TA= +90C; VRWM= 40 V(pk); 1N6864, TA= +80C; VRWM= 80 V(pk); VRWM = half sine wave, f = 60Hz11 Required IR1 100 percent of initial reading or 0.05 mA whichever is greater; VFM2 50 mV dc. Required IR1and VFM212 See 4.3.2 t = 48 ho

37、urs. See 4.3.2 13 Required Subgroup 2 of table I herein; IR1 100 percent of initial reading or 0.05 mA whichever is greater; VFM2 50 mV dc Required Subgroup 2 of table I herein; IR1 100 percent of initial reading or 0.05 mA whichever is greater; VFM2 50 mV dc (1) Thermal impedance shall be performed

38、 anytime after temperature cycling, screen 3a, and does not need to be repeated in screening. (2) Junction temperature (TJ) is not to exceed 115C at VRWM. TJis affected by the device mounting thermal resistance when parasitic power is generated by the temperature dependent leakage current. Until thi

39、s leakage becomes significant near thermal runaway, TJremains approximately equal to TAor TJfor IO= 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/620H 8 4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with

40、 MIL-PRF-19500. As a minimum, die shall be 100-percent probed in accordance with table I, subgroup 2, except for thermal impedance. 4.3.1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening lev

41、el requirements. Electrical testing shall be in accordance with table I, subgroup 2 herein. 4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF= 3.0 A dc (min). Mounting and test conditions shall be in accordance with method 1038 of MIL-STD-750, test condition B. 4.3.3 Thermal impedance

42、measurements. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IHand IM. The thermal impedance limit (ZJX) shall be less than the process determined statistical maximum limi

43、t as outlined in method 3101 or 4081 of MIL-STD-750, as applicable. See group E, subgroup 4 of table II herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in acc

44、ordance with table E-V of MIL-PRF-19500, and table I herein. The following test conditions shall be used for ZJX, group A inspection: a. IM measurement current: 1 mA to 10 mA. b. IH forward heating current: 3A. c. tH heating time: 10 ms. d. tMDmeasurement delay time: 70 s maximum. 4.4.2 Group B insp

45、ection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa and E-VIb (JANS, JANTXV, JANTX, and JAN) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.

46、1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1056 -55C to 100C, 25 cycles, n = 22, c = 0. B3 1051 -55C to 150C, 100 cycles, n = 22, c = 0. B3 4066 IFSM= 80 A (pk), condition A 2, IO= 3 A dc; TA= room ambient as defined in 4.5 of MIL-STD-750; five surges of

47、8.3 ms each at 1 minute intervals. B4 1037 IF= 3.0 A dc; TA= room ambient as defined in the general requirements of MIL-STD-750; ton= toff= 3 minutes minimum for 2,000 cycles. B5 1026 IF= 3 A dc minimum, adjust IFor TAto achieve TJ= +125C minimum. Provided by IHSNot for ResaleNo reproduction or netw

48、orking permitted without license from IHS-,-,-MIL-PRF-19500/620H 9 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1056 -55C to 100C, 10 cycles, n = 22, c = 0. B2 1051 -55C to 150C, 25 cycles, n = 22, c = 0. B2 4066 IFSM= 80 A (pk), con

49、dition A 2, IO= 3 A dc; TA= room ambient as defined in 4.5 of MIL-STD-750; five surges of 8.3 ms each at 1 minute intervals. B3 1027 IF= 3 A dc minimum, adjust IFor TAto achieve TJ= +125C. B4 2075 As applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the c