DLA MIL-PRF-19500 615 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7382 AND 2N7383 JANTXV M D R AND F AND JANS M D R AND F.pdf

《DLA MIL-PRF-19500 615 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7382 AND 2N7383 JANTXV M D R AND F AND JANS M D R AND F.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 615 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7382 AND 2N7383 JANTXV M D R AND F AND JANS M D R AND F.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/615F 10 July 2013 SUPERSEDING MIL-PRF-19500/615E 28 March 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F This specification is approved

2、 for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for a P-channel, radiation hard

3、ened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC

4、and JANKC die versions. 1.2 Physical dimensions. See figure 1 (TO-257AA). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) PTTA= +25C (free air) RJC(2) Min V(BR)DSSVGS= 0 V ID=-1.0 mA dc ID1(3) (4) ID2(3) (4) TC= +100C TJ and TSTGW W C/W V dc A dc A dc C 2N7382 75 2 1.67 -100 -1

5、1.0 -7.0 -55 to +150 2N7383 75 2 1.67 -200 -6.5 -4.1 -55 to +150 Type ISIDM(5) EASIASVGSA dc A (pk) mJ A dc V dc 2N7382 -11.0 -44 150 -11.0 20 2N7383 -6.5 -26 165 -6.5 20 See notes on next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed t

6、o DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and proc

7、ess conversion measures necessary to comply with this revision shall be completed by 10 October 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/615F 2 1.3 Maximum ratings - Continued. (1) Derated linearly by 0.6 W/C for TC +25C. (

8、2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 x ID1as calculated in note 3. 1.4 Primary electrical characteristics. Unless othe

9、rwise specified, TC= +25C. Type VGS(th)1VDS VGSMax IDSSVGS= 0 V Max rDS(on)1(1) VGS= 12 V dc ID= ID2ID= -1.0 mA VDS= 80 percent of rated VDSTJ= +25C TJ= +150C V dc A dc ohms Min Max 2N7382 2.0 4.0 -25 0.30 0.615 2N7383 2.0 4.0 -25 0.80 1.76 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 Genera

10、l. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completen

11、ess of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, stand

12、ards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMEN

13、T OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 O

14、rder of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a speci

15、fic exemption has been obtained. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/615F 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals ar

16、e isolated from case. 4. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration (TO-257AA). Dimensions Ltr Inches Millimeters Min

17、Max Min Max BL .410 .430 10.41 10.92 BL1 .028 0.71 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .625 12.70 15.88 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain

18、Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/615F 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices fur

19、nished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbol

20、s, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials tha

21、t contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead material and finish. Lead material shall be Kovar, Alloy 52, and a copper core is permitted. Lead finish shall be solderable in accordance

22、with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition requirement (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Marking. Marking shall b

23、e in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of electrostatic charge. The following

24、handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or

25、silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source

26、. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.9 Wor

27、kmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/6

28、15F 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspecti

29、on shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance o

30、f table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process

31、or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the slash sheet. End-

32、point measurements shall be in accordance with table III. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/615F 6 4.3 Screening (JANS

33、 and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of

34、 MIL-PRF-19500 (1) (2) JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1). (3) Method 3470 of MIL-STD-750, (see 4.3.2) optional Method 3470 of MIL-STD-750, (see 4.3.2) optional (3) 3c Method 3161 of MIL-STD-750, (see 4.3.3) Method 3161 of MIL-STD-750, (see 4.3.3)

35、9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein. Subgroup 2 of table I herein. 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein: IGSSF1= 20 nA dc or 100 percent of initial value

36、, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1, subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A, t = 240 hour

37、s Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater.

38、 rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value,

39、 whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. (3) Shall be performed anytime

40、 after temperature cycling, screen 3a; JANTXV level does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/615F 7 4.3.1 Gate stress test. Apply VGS= 24 V min. for t = 250 s min. 4.3.2 Sin

41、gle pulse avalanche energy (EAS). a. Peak current (IAS) ID1. b. Peak gate voltage (VGS) -12 V. c. Gate to source resistor (RGS) 25 RGS 200 . d. Initial case temperature . +25C +10C, -5C. e. Inductance . (2EAS/(IAS)2)(VBR- VDD)/VBR) mH minimum. f. Number of pulses to be applied . 1 pulse minimum. g.

42、Supply voltage . VDD= -50 V, or -25 V for 100 V devices. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time

43、 (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (e

44、nd-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Elec

45、trical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Condition G. B4 1042 The heating cycle shall be 1 minute minimum. B5 1042 Condition A; VDS= 100 percent of rated

46、; TA= +175C; t = 120 hours or TA= +150C; t = 240 hours (manufacturers option). B5 1042 Condition B; VGS= 100 percent of rated; TA= +175C; t = 24 hours or TA= +150C; t = 48 hours (manufacturers option). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

47、MIL-PRF-19500/615F 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G. B3 1042 The heating cycle shall be 1 minute minimum. B3 2037 Test condition D. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance wit

48、h the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A, weight = 10 lbs., t = 10 seconds. C5 3161 See 4.3.3, RJC(max)= 1.67C/W. C6 1042 The heating cycle shall be 1 minute minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with th