DLA MIL-PRF-19500 614 H-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS N-CHANNEL SILICON TYPES 2N7380 AND 2N7381 JANTXV M D R F G AND H AND JANS M D R F G AN.pdf

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1、 MIL-PRF-19500/614H 13 May 2013 SUPERSEDING MIL-PRF-19500/614G 19 March 2012 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H This specificatio

2、n is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for an N-channel,

3、radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See

4、 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1 (TO-257AA). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TC= +25C PTTA= +25C (free air) RJC (2) Min V(BR)DSSVGS= 0 V ID= 1.0 mA dc ID1(3) (4) TC= +25C ID2(3) (4) TC= +100C TJand TSTG2N7380 2N7381 W

5、75 75 W 2 2 C/W 1.67 1.67 V dc 100 200 A dc 14.4 9.4 A dc 9.1 6.0 C -55 to +150 -55 to +150 Type ISIDMVGSEAS max IAS(5) 2N7380 A dc 14.4 A(pk) 57.6 V dc 20 mJ 150 A dc 14.4 2N7381 9.4 37.6 20 150 9.4 (See notes next page) AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this doc

6、ument should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/.

7、 The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 August 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/614H 2 1.3 Maximum ratings. continued (1) Derate linearly by

8、 0.6 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and device construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). 1.4 Primary electrical chara

9、cteristics. Unless otherwise specified, TC= +25C. Min V(BR)DSSVGS(th)1IDSSmax VGS= 0 Max rDS(on)1 (1) VGS= 12 V; ID= ID2Type VGS= 0 ID= 1.0 mA dc VDS VGS ID= 1.0 mA dc VDS= 80 percent of rated VDSTJ= +25C TJ= +150C V dc V dc A dc Min Max 2N7380 100 2.0 4.0 25 0.18 0.33 2N7381 200 2.0 4.0 25 0.40 0.8

10、4 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as exampl

11、es. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, s

12、tandards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 -

13、 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robb

14、ins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howeve

15、r, supersedes applicable laws and regulations unless a specific exemption has been obtained. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/614H 3 NOTES: 1. Dimensions are in inches. 2. Millimeters

16、 are given for general information only. 3. All terminals are isolated from case. 4. This area is for the lead feed-through eyelets (configuration is optional, but will not extend beyond this zone). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and

17、configuration (TO-257AA). Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 BL1.028 0.71 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .625 12.70 15.88 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .

18、045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source Term 3 Gate See note 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/614H 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-P

19、RF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3

20、 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, nonrepetitive. nC nano Coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specif

21、ied in MIL-PRF-19500, and on figure 1 (TO-257AA). Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.4.1 L

22、ead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. M

23、arking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The fol

24、lowing handling procedures shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rub

25、ber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain

26、to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be table I as specified herein. 3.9 Workmans

27、hip. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/614H 5

28、 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection s

29、hall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of ta

30、ble III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or d

31、esign changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the slash sheet. End-poin

32、t measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/614H 6 4.3 Screening (JANS and

33、JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-195

34、00) (1) (2) Measurement JANS level JANTXV level (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750. (see 4.3.2) Method 3470 of MIL-STD-750. (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750 (see 4.3.3) Method 3161 of MIL-STD-750 (see 4.3.3) 9 IGSSF1, IGSSR1, IDS

35、S1, subgroup 2 of table I herein Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA

36、 dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subg

37、roup 2 and 3 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 pe

38、rcent of initial value. Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial

39、value. VGS(th)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level

40、 does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/614H 7 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak cu

41、rrent (IAS) . ID1. b. Peak gate voltage (VGS) . 12 V. c. Gate to source resistor (RGS) . 25 RGS 200 . d. Initial case temperature . +25C +10C, -5C. e. Inductance ( )212EIV VVASDBR DDBRmH minimum. f. Number of pulses to be applied . 1 pulse minimum. g. Supply voltage . VDD= 50 V, or 25 V for 100 V de

42、vices. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgrou

43、p 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in acco

44、rdance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in a

45、ccordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Condition G. B4 1042 The heating cycle shall be 1 minute minimum, 2,000 cycles. B5 1042 Condition A; VDS= 100 percent of rated; TA= +175C, t = 120 hours or TA

46、= +150C, t = 240 hours; read and record VBR(DSS)(pre and post) at ID= 1 mA; read and record IDSS(pre and post), in accordance with table I, subgroup 2. B5 1042 Condition B; VGS= 100 percent of rated TA= +175C, t = 24 or TA= +150C, t = 48 hours. Provided by IHSNot for ResaleNo reproduction or network

47、ing permitted without license from IHS-,-,-MIL-PRF-19500/614H 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Condition G. B3 1042 The heating cycle shall be 1 minute minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in ac

48、cordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A, weight = 10 lbs, t = 10 seconds. C5 3161 See 4.3.3, RJC(max)= 1.67C/W C6 1042 The heating cycle shall be 1 minute minimum, 6,000 cycles. No heat sink nor forced air cooling on the device shall be permitted. 4.4.4 Group D Inspection. Group D inspection shall be conducted in accordance with appendix E, table E-VIII of MIL-PRF-19500 and