REG NASA-LLIS-0792-2000 Lessons Learned Radiation Design Margin Requirement.pdf
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1、Best Practices Entry: Best Practice Info:a71 Committee Approval Date: 2000-04-17a71 Center Point of Contact: JPLa71 Submitted by: Wil HarkinsSubject: Radiation Design Margin Requirement Practice: Design spacecraft hardware assemblies with the required radiation design margin (RDM) to assure that the
2、y can withstand ionization effects and displacement damage resulting from the flight radiation environment. The term “margin“ does not imply a known factor of safety but rather accommodates the uncertainty in the radiation susceptibility predictions. The reliability requirement to survive for a peri
3、od of time in the anticipated mission radiation environment is a spacecraft design driver.Abstract: Preferred Practice for Design from NASA Technical Memorandum 4322A, NASA Reliability Preferred Practices for Design and Test.Benefit:The Radiation Design Margin (RDM) requirement is imposed on assembl
4、ies or subsystems to assure reliable operation and to minimize the risk, especially in mission critical applications. The general use of an RDM connotes action to overcome the inevitable uncertainties in environmental calculations and part radiation hardness determinations.Implementation Method:RDM
5、is defined as the ratio of the part or component radiation capability in the given application to the expected radiation environment at the part or component location during the mission. The part/component radiation capability is defined to be the fluence (or dose), flux (or dose rate) of charged pa
6、rticles, or nuclear radiation which will produce enough change (degradation or radiation induced interference) in the part characteristics to cause the part to operate outside of specification for the particular circuit application. An RDM value of 2, for example, would mean that the hardware is des
7、igned to withstand twice the radiation predicted by the radiation model.Based on flight experiences, it is standard practice at JPL for most applications to require an RDM of 2 if only the inadvertent shielding of the surrounding spacecraft or instrument enclosure materials are considered in the rad
8、iation/shielding analysis. However it is required to invoke an RDM of 3 when the local shielding, such as component/part packaging or spot shielding, is taken into account.The RDM requirement does not apply directly to single event effects (SEE) such as single event upset (SEU), single event latchup
9、 (SEL), etc. However, SEE margins are derived by placing limits on minimum SEE sensitivity and by using design-case mission environments that account for the statistical probabilities of solar flares.Radiation Effects(1) Long-Term Ionization Effects Damage to electronics and materials may arise from
10、 the long-term effects of ionizing radiation. Ionization occurs when charged particles (or electrons from gamma-ray interactions) transfer small amounts of energy to electrons in the target material. The unit of ionization is the rad (material must be specified), which is defined as 100 erg/g of mat
11、erial.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-In semiconductor devices, ionization produces electron-hole pairs within the semiconductor and insulators (such as oxides). Some of this charge will be trapped at the semiconductor/insulator surfa
12、ce. In MOS structures, the trapped charge will cause a shift in the gate threshold voltage. Mobility (which affects switching speed and drive current) is also degraded. In addition to the gate oxide, ionization also affects the field oxide, which is used for isolation in MOS integrated circuits. Thi
13、s will result in extremely large leakage currents if the threshold shifts are large enough to cause inversion. Field oxide failure is an important failure mode for many commercial CMOS devices.In bipolar devices, trapped charges at oxide layers cause two effects. The traps increase surface recombina
14、tion, decreasing the gain of bipolar transistors. If the trap density is high enough, an inversion layer can be created in p-doped regions that increases the surface area of the junction. This also affects transistor gain, and may cause substantial increases in leakage current.In optical materials,
15、long-term ionization effects appear primarily as an increase in optical absorption. These usually are manifestations of charge trapping at a pre-existing defect, so the absorption rate is a strong function of the initial material properties. For example, fused quartz generally colors less than alkal
16、i glasses from a given ionizing dose.In quartz crystal used for precision oscillators or filters, long-term ionization effects can produce significant resonant frequency shifts. Again, there is a strong dependence upon the type of material used. Natural quartz shows the largest frequency shift for a
17、 given ionizing dose; synthetic quartz shows less, and swept synthetic quartz even less. In these cases, selection of the quartz crystal growth method can minimize the potential effect.The devices and materials of concern and the most serious radiation induced effects are:1. MOS devices (threshold v
18、oltage shift, decrease in drive current and switching speed, increase in leakage current).2. Bipolar transistors (hFEdegradation, especially at low collector current; leakage current), and junction field effects transistors (JFETs) (enhanced source-drain leakage current).3. Analog microcircuits (off
19、set voltage, offset current and bias-current changes, gain degradation).4. Digital microcircuits (enhanced transistor leakage, or logic failure due to decrease in gain (bipolar devices) or changes in threshold voltage and switching speed (CMOS).5. Quartz resonant crystals (frequency shifts).6. Optic
20、al materials (increased absorption).7. External polymeric surfaces (mechanical degradation).(2) Transient Ionization Effects (Interference) Interference is defined as transient ionization effects that persist only while the electronics are being Provided by IHSNot for ResaleNo reproduction or networ
21、king permitted without license from IHS-,-,-irradiated, and whose severity is generally proportional to the dose rate. Interference effects depend primarily on the rate of ionization energy deposition, i.e., the dose rate measured in rads (material)/sec.There are four types of interference in electr
22、onic devices and optical materials:1. Primary photocurrents in low current input stages to the electronics.2. Electron emission from cathodes of electron multiplier-type detectors.3. Ionization-induced conductivity in photo-sensitive materials, such as those in detector surfaces.4. Ionization-induce
23、d fluorescence in optical materials such as detector windows and lenses (fluorescence efficiencies vary strongly with the material).(3) Displacement Effects Displacement of atoms in crystal lattices cause permanent changes in material properties. The expected proton and electron fluences usually do
24、not represent as severe an environment for displacement effects as for long-term ionization effects. Therefore, only the most sensitive devices will be affected significantly by displacement effects.Displacement effects can impact the following electronic devices and properties:1. Bipolar transistor
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